FQB50N06TM

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FQB50N06TM

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MOSFET N-CH 60V 50A D2PAK

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Thông số kỹ thuật

thuộc tính Giá trị
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series QFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 50A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 22mOhm @ 25A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 41 nC @ 10 V
Vgs(Max) ±25V
Input Capacitance(Ciss)(Max) @ Vds 1540 pF @ 25 V
Power Dissipation (Max) 3.75W (Ta), 120W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)

Tổng quan

Description

The FQB50N06TM is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient and fast switching applications. It is commonly used in power management, motor control, and switching power supplies due to its ability to handle significant power levels. This specific model features a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 50A, making it suitable for moderate to high power applications.
Key features include a low on-state resistance (R_DS(on)), which minimizes power loss during operation, enhancing efficiency. The device is housed in a TO-220 package, providing effective thermal management and ease of mounting. The FQB50N06TM is characterized by a fast switching speed, which reduces switching losses and improves overall circuit performance.
Its robust design and reliable performance make it a popular choice for designers looking to implement efficient power conversion and management solutions. It is important to consider the specific requirements of your application to ensure this MOSFET meets your needs.

Equivalent

The FQB50N06TM is an N-channel MOSFET with specific characteristics. Equivalent products include MOSFETs with similar voltage, current, and RDS(on) specifications. Some potential equivalents are:
1. IRFZ44N by Infineon Technologies
2. STP55NF06 by STMicroelectronics
3. NTP60N06 by ON Semiconductor
Ensure to verify the specific parameters like V_DS, I_D, and R_DS(on) for compatibility, as differences in packaging or other minor specifications may exist.

Features

The FQB50N06TM is an N-channel MOSFET known for its efficiency and reliability in power management applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: This MOSFET supports a continuous drain current (I_D) of up to 50A at 25°C.
3. RDS(on): It has a low on-resistance (R_DS(on)) of typically 18 mΩ, which minimizes power loss and heat generation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, making it suitable for low-voltage gate drive applications.
5. Package: The FQB50N06TM is commonly available in a TO-263 package for effective heat dissipation.
6. Thermal Performance: It offers efficient thermal resistance properties, aiding in better thermal management.
7. Applications: Ideal for high-speed switching applications, including motor control, power supplies, and DC-DC converters.
These features make the FQB50N06TM a versatile choice for various electronic and power control applications.

Pinout

The FQB50N06TM is an N-channel MOSFET, and it typically comes in a TO-220 package. This device has three pins, which are standard for MOSFETs. Here is a concise breakdown of the pin functions:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, you can turn the MOSFET on or off. The gate voltage determines whether the MOSFET is in a conductive state or not.
2. Drain (D): This is the pin through which the main current flows when the MOSFET is turned on. It connects to the load that the MOSFET is controlling.
3. Source (S): This pin is the return path for the current flowing through the drain. It is typically connected to the ground in N-channel MOSFET configurations.
The FQB50N06TM is designed for low on-resistance and high-current handling, making it suitable for power applications.

Manufacturer

The FQB50N06TM is manufactured by ON Semiconductor. ON Semiconductor is a leading global provider of semiconductor solutions, with a focus on energy-efficient innovations. They design and supply a comprehensive range of semiconductor components that address the needs of automotive, industrial, consumer, computing, and communications markets. The company is known for producing a variety of products, including power and signal management, logic, discrete, and custom devices, which are crucial for the functionality of electronic systems. ON Semiconductor's offerings help improve energy efficiency, enhance system performance, and enable new technologies across various applications.

Application

The FQB50N06TM is an N-channel MOSFET commonly used in various applications due to its efficiency and performance characteristics. Key application areas include:
1. Power Supply Management: Utilized in DC-DC converters and power management systems for efficient voltage regulation.
2. Motor Control: Employed in motor drivers for controlling speed and torque in applications like electric vehicles and industrial machines.
3. Switching Circuits: Suitable for high-speed switching operations in electronic devices.
4. Automotive Systems: Used in automotive electronics for systems requiring high current handling and reliability.
5. Consumer Electronics: Integrated into power management circuits in devices like TVs and audio systems.
These applications leverage its low on-resistance and high-speed switching capabilities.

Package

The FQB50N06TM is typically available in a TO-252 package, also known as D-PAK. This is a surface-mount package used for housing transistors and other semiconductor devices.

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