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FQB50N06TM
+BOMMOSFET N-CH 60V 50A D2PAK
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Nhà sản xuấtonsemi
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Ông. Phần #FQB50N06TM
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Bảng dữ liệu FQB50N06TM DataSheet
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Gói D2PAK-3
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 50A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 22mOhm @ 25A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 41 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 1540 pF @ 25 V |
| Power Dissipation (Max) | 3.75W (Ta), 120W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263) |
Tổng quan
Description
Key features include a low on-state resistance (R_DS(on)), which minimizes power loss during operation, enhancing efficiency. The device is housed in a TO-220 package, providing effective thermal management and ease of mounting. The FQB50N06TM is characterized by a fast switching speed, which reduces switching losses and improves overall circuit performance.
Its robust design and reliable performance make it a popular choice for designers looking to implement efficient power conversion and management solutions. It is important to consider the specific requirements of your application to ensure this MOSFET meets your needs.
Equivalent
1. IRFZ44N by Infineon Technologies
2. STP55NF06 by STMicroelectronics
3. NTP60N06 by ON Semiconductor
Ensure to verify the specific parameters like V_DS, I_D, and R_DS(on) for compatibility, as differences in packaging or other minor specifications may exist.
Features
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: This MOSFET supports a continuous drain current (I_D) of up to 50A at 25°C.
3. RDS(on): It has a low on-resistance (R_DS(on)) of typically 18 mΩ, which minimizes power loss and heat generation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, making it suitable for low-voltage gate drive applications.
5. Package: The FQB50N06TM is commonly available in a TO-263 package for effective heat dissipation.
6. Thermal Performance: It offers efficient thermal resistance properties, aiding in better thermal management.
7. Applications: Ideal for high-speed switching applications, including motor control, power supplies, and DC-DC converters.
These features make the FQB50N06TM a versatile choice for various electronic and power control applications.
Pinout
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, you can turn the MOSFET on or off. The gate voltage determines whether the MOSFET is in a conductive state or not.
2. Drain (D): This is the pin through which the main current flows when the MOSFET is turned on. It connects to the load that the MOSFET is controlling.
3. Source (S): This pin is the return path for the current flowing through the drain. It is typically connected to the ground in N-channel MOSFET configurations.
The FQB50N06TM is designed for low on-resistance and high-current handling, making it suitable for power applications.
Manufacturer
Application
1. Power Supply Management: Utilized in DC-DC converters and power management systems for efficient voltage regulation.
2. Motor Control: Employed in motor drivers for controlling speed and torque in applications like electric vehicles and industrial machines.
3. Switching Circuits: Suitable for high-speed switching operations in electronic devices.
4. Automotive Systems: Used in automotive electronics for systems requiring high current handling and reliability.
5. Consumer Electronics: Integrated into power management circuits in devices like TVs and audio systems.
These applications leverage its low on-resistance and high-speed switching capabilities.