FQD13N06LTM

Hình ảnh chỉ để tham khảo

FQD13N06LTM

+BOM

MOSFET N-CH 60V 11A DPAK

365 Đảm bảo chất lượng ngày

7*24 giờ dịch vụ quarantee

90-Bảo hành sau bán hàng ngày

Bảo hành sản phẩm chính xác

Thông số kỹ thuật

thuộc tính Giá trị
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Series QFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 11A (Tc)
Drive Voltage(Max Rds On Min Rds On) 5V, 10V
Rds On(Max) @ Id Vgs 115mOhm @ 5.5A, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 6.4 nC @ 5 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 350 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 28W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA

Tổng quan

Description

The FQD13N06LTM is an N-channel MOSFET from ON Semiconductor, designed for power management applications. Key features include:
- Voltage Rating: 60V
- Current Rating: 13A (continuous)
- Low On-Resistance (RDS(on)): 0.045Ω (max at VGS = 10V)
- Fast Switching: Suitable for high-efficiency DC-DC converters, motor control, and load switching.
- Logic-Level Gate Drive: Can be driven by 4.5V or higher, making it compatible with microcontrollers.
- Package: TO-252 (DPAK), offering good thermal performance.
Ideal for battery-powered devices, power supplies, and automotive systems due to its balance of efficiency, cost, and robustness. Always refer to the datasheet for detailed specifications and application guidelines.

Equivalent

Equivalent products to the FQD13N06LTM (N-channel MOSFET, 60V, 13A) include:
- IRLZ14N (60V, 12A)
- IRFZ24N (60V, 17A)
- STP16NF06 (60V, 16A)
- AOD4184 (60V, 14A)
Check datasheets for exact specs like RDS(on) and gate charge before substitution.

Features

The FQD13N06LTM is an N-channel MOSFET with the following key features:
- Voltage Rating: 60V
- Current Rating: 13A (continuous)
- Low On-Resistance (RDS(on)): 0.045Ω (max at VGS = 10V)
- Fast Switching: Suitable for high-efficiency applications
- Logic-Level Gate Drive: Can be driven by 4.5V or higher
- Low Gate Charge (Qg): Enhances switching performance
- AEC-Q101 Qualified: Automotive-grade reliability
- Package: TO-252 (DPAK), surface-mount design
Ideal for power management in automotive, DC-DC converters, and motor control.

Pinout

The FQD13N06LTM is an N-channel MOSFET in a TO-252 (DPAK) package with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key Features:
- 60V drain-source voltage (VDS).
- 13A continuous drain current (ID).
- Low on-resistance (RDS(on) = 0.045Ω).
- Logic-level gate drive (suitable for 5V control).
Commonly used in power switching, motor control, and DC-DC converters.

Application

The FQD13N06LTM is an N-channel MOSFET commonly used in:
1. Power Management – DC-DC converters, voltage regulators.
2. Motor Control – Driving small motors in robotics and automotive systems.
3. Switching Circuits – Load switches, relay replacements.
4. LED Drivers – Efficient current control in lighting systems.
5. Consumer Electronics – Power supplies, battery management.
Its low on-resistance (RDS(on)) and high efficiency make it suitable for low-voltage (60V) applications requiring fast switching and minimal power loss.

Package

The FQD13N06LTM is an N-channel MOSFET housed in a TO-252 (DPAK) surface-mount package. This package type offers efficient thermal performance and compact size, suitable for power applications. Key features include a tab for heat dissipation and three leads (gate, drain, source). It's commonly used in switching circuits, power management, and motor control.

Sản phẩm liên quan đến FQD13N06LTM

  • Trích dẫn nhanh chóng

  • Gửi yêu cầu báo giá của bạn cho FQD13N06LTM sử dụng biểu mẫu này.chúng tôi sẽ trả lời trong vòng 12 giờ.