FQP2N60C

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FQP2N60C

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MOSFET N-CH 600V 2A TO220-3

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Thông số kỹ thuật

thuộc tính Giá trị
Package / Case Bulk,Tube
Series QFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain(Id) @ 25°C 2A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 4.7Ohm @ 1A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 12 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 235 pF @ 25 V
Power Dissipation (Max) 54W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3

Tổng quan

Description

The FQP2N60C is an N-channel MOSFET designed for high-voltage, high-speed switching applications. Key features include:
- Voltage Rating: 600V drain-to-source (VDSS)
- Current Rating: 2A continuous drain current (ID)
- Low On-Resistance: 3.5Ω (typical) for efficient power handling
- Fast Switching: Optimized for applications like power supplies, inverters, and motor control
- Package: TO-220, ensuring good thermal performance
It is suitable for medium-power switching tasks, offering a balance of performance and reliability. Always refer to the datasheet for detailed specifications and application guidelines.

Equivalent

Equivalent products to the FQP2N60C (600V, 2A N-channel MOSFET) include:
- IRFBC40 (600V, 6.2A)
- STP2NK60Z (600V, 2A)
- 2N60 (600V, 2A)
- FQPF2N60C (SMD version)
- KSC2N60F (600V, 2A)
Check datasheets for exact specs like gate charge and RDS(on) before substitution.

Features

The FQP2N60C is an N-channel MOSFET with the following key features:
- Voltage Rating: 600V drain-to-source (VDSS).
- Current Rating: 2A continuous drain current (ID).
- Low On-Resistance: 3.5Ω (max) at VGS = 10V.
- Fast Switching: Low gate charge (Qg) and fast switching speed.
- Low Gate Drive: 10V gate-to-source voltage (VGS).
- Avalanche Energy Rated: Improved ruggedness.
- Package: TO-220 (through-hole).
Ideal for switching power supplies, inverters, and motor control applications.

Pinout

The FQP2N60C is an N-channel MOSFET with 3 pins (TO-220 package):
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Ground/reference terminal.
Key Features:
- 600V drain-source voltage (VDS).
- 2A continuous drain current (ID).
- Low gate charge for efficient switching.
- Used in power supplies, inverters, and motor control.
Concise and functional for quick reference.

Application

The FQP2N60C, a 600V N-channel MOSFET, is commonly used in:
1. Switching Power Supplies – Efficient power conversion in AC/DC and DC/DC applications.
2. Motor Control – Drives and controls motors in appliances and industrial systems.
3. Lighting Systems – Ballasts and LED drivers for stable operation.
4. Inverters – Converts DC to AC in solar and UPS systems.
5. Electronic Load Switching – Fast switching in relays and solid-state switches.
Its high voltage tolerance and low on-resistance make it ideal for energy-efficient, high-power applications.

Package

The FQP2N60C is a N-channel MOSFET housed in a TO-220 package. This package type is through-hole mountable, provides good thermal performance, and is commonly used for power applications. It has three leads (gate, drain, source) and a metal tab for heat dissipation. Suitable for medium-power switching and amplification.

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