FQP33N10

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FQP33N10

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MOSFET N-CH 100V 33A TO220-3

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Thông số kỹ thuật

thuộc tính Giá trị
Package / Case Bulk,Tube
Series QFET®
Part Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 33A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 52mOhm @ 16.5A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 51 nC @ 10 V
Vgs(Max) ±25V
Input Capacitance(Ciss)(Max) @ Vds 1500 pF @ 25 V
Power Dissipation (Max) 127W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3

Tổng quan

Description

The FQP33N10 is an N-channel MOSFET designed for power applications. Key features include:
- Voltage Rating: 100V
- Current Rating: 33A (continuous)
- Low On-Resistance (RDS(on)): Typically 0.042Ω (at VGS = 10V)
- Fast Switching: Suitable for high-efficiency circuits like DC-DC converters, motor drivers, and power supplies.
- Package: TO-220 (through-hole), ensuring good thermal performance.
It operates with a gate threshold voltage (VGS(th)) of 2–4V, making it compatible with 5V/12V logic. The FQP33N10 is commonly used in medium-power switching applications due to its balance of performance and cost. Always refer to the datasheet for detailed specifications and thermal considerations.

Equivalent

The FQP33N10 is a 100V, 33A N-channel MOSFET. Equivalent or similar alternatives include:
- IRF3205 (55V, 110A)
- IRF1404 (40V, 162A)
- IRLZ44N (55V, 47A)
- STP80NF55-06 (55V, 80A)
- AOT240L (100V, 40A)
Check datasheets for exact specs like RDS(on) and gate charge to ensure compatibility.

Features

The FQP33N10 is an N-channel MOSFET with the following key features:
- Voltage Rating: 100V drain-to-source voltage (VDSS).
- Current Rating: 33A continuous drain current (ID) at 25°C.
- Low On-Resistance: Typically 50mΩ (RDS(on)) at VGS = 10V.
- Fast Switching: Suitable for high-speed applications.
- Gate Drive Voltage (VGS): ±20V max, with a threshold (VGS(th)) of 2–4V.
- Power Dissipation: 150W (with proper heat sinking).
- Package: TO-220, for easy mounting.
Commonly used in power supplies, motor control, and DC-DC converters due to its efficiency and robustness.

Pinout

The FQP33N10 is an N-channel MOSFET with 3 pins:
1. Gate (G): Controls the switching operation (typically requires 4V to 10V to turn on).
2. Drain (D): Connects to the load (handles up to 100V and 33A continuous current).
3. Source (S): Ground/reference terminal.
Key features:
- 100V drain-source voltage (VDS)
- 33A continuous drain current (ID)
- Low on-resistance (RDS(on) ≈ 0.035Ω)
- TO-220 package (common for power applications).
Used in power switching, motor control, and DC-DC converters.

Manufacturer

The FQP33N10 is an N-channel MOSFET manufactured by Fairchild Semiconductor, a company known for producing power management and analog semiconductor solutions.
Fairchild Semiconductor, founded in 1957, was a pioneer in transistor technology and later expanded into power semiconductors, logic devices, and optoelectronics. It was acquired by ON Semiconductor in 2016, which continues to produce many Fairchild-originated components.
The FQP33N10 is a 100V, 33A MOSFET designed for high-power switching applications, commonly used in power supplies, motor control, and amplifiers.
Fairchild was respected for innovation in power electronics before its acquisition. ON Semiconductor now maintains its legacy products.

Package

The FQP33N10 is an N-channel MOSFET available in a TO-220 package. This through-hole package is commonly used for power applications due to its robust thermal and electrical performance, featuring a metal tab for heat dissipation. It is suitable for high-voltage (100V) and high-current (33A) applications.

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