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FQPF13N50C
+BOMMOSFET N-CH 500V 13A TO220F
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Nhà sản xuấtonsemi
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Ông. Phần #FQPF13N50C
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | onsemi |
| Package / Case | Tube |
| Series | QFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain(Id) @ 25°C | 13A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 480mOhm @ 6.5A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 56 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 2055 pF @ 25 V |
| Power Dissipation (Max) | 48W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220F-3 |
Tổng quan
Description
Key characteristics of the FQPF13N50C include a low on-resistance, which minimizes power loss and enhances efficiency, and a high-speed switching capability, which is beneficial for applications requiring rapid on-off cycling. The device is typically housed in a TO-220F package, providing good heat dissipation and ease of mounting on circuit boards.
The FQPF13N50C is favored for its robust construction, reliability, and performance in demanding environments. It is often used in industrial and consumer electronics where efficient power management and thermal performance are crucial. Its design helps in reducing overall system size and cost by enabling higher efficiency and lower thermal output.
Equivalent
1. IRF530N
2. STP14NF10
3. NTE2398
4. FQA13N50C (Fairchild version)
5. FDPF12N50
Ensure compatibility by checking the datasheets for parameters like voltage, current rating, and package type.
Features
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) rating of 500V and a continuous drain current (I_D) of 13A.
2. R_DS(on): The on-resistance is low, which helps in reducing power loss and improving efficiency.
3. Fast Switching: The device is capable of fast switching speeds, making it suitable for high-frequency applications.
4. Thermal Performance: It comes with good thermal management capabilities, which are essential for preventing overheating in demanding applications.
5. Applications: Commonly used in power supplies, motor controls, lighting, and other power management systems.
6. Package Type: It is typically housed in a TO-220F package, which provides good thermal conduction and is easy to mount.
These features make the FQPF13N50C an ideal choice for various high-voltage and high-power applications.
Pinout
1. Gate (G): The gate terminal is where the input signal is applied. It controls the conductivity between the drain and the source. The gate voltage determines when the MOSFET turns on or off.
2. Drain (D): The drain terminal is connected to the main power supply. It is the point from which the current flows into the device when the MOSFET is turned on.
3. Source (S): The source terminal is connected to the ground or the negative side of the power supply. It acts as the return path for the current flowing through the drain to the ground.
The FQPF13N50C is commonly used for its capability to handle high voltages and currents in power supply circuits, motor controllers, and other high-power applications.
Manufacturer
Application
1. Switch Mode Power Supplies (SMPS): Used for efficient power conversion in various electronic devices.
2. Uninterruptible Power Supplies (UPS): Ensures reliability and efficiency in power backup systems.
3. Motor Drives: Suitable for driving motors in industrial and consumer appliances.
4. Lighting Systems: Employed in LED lighting for enhanced energy efficiency.
5. DC-DC Converters: Utilized in voltage conversion for various electronic devices.
6. Inverters: Used in solar inverters and other renewable energy systems to convert DC to AC.
These applications leverage its low on-resistance and fast switching capabilities.