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FQPF6N80C
+BOMMOSFET N-CH 800V 5.5A TO220F
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Nhà sản xuấtonsemi
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Ông. Phần #FQPF6N80C
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Bảng dữ liệu FQPF6N80C DataSheet
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Gói TO-220F-3
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Có sẵn4835
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package | Tube |
| Series | QFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 5.5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 2.5Ohm @ 2.75A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 30 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1310 pF @ 25 V |
| PowerDissipation(Max) | 51W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220F-3 |
Tổng quan
Description
- Voltage Rating: 800V
- Current Rating: 6A (continuous)
- Low On-Resistance (RDS(on)): 1.5Ω (max)
- Fast Switching: Suitable for high-efficiency applications
- Package: TO-220F (isolated tab for easier mounting)
Applications:
- Power supplies (SMPS, flyback converters)
- Lighting (LED drivers, ballasts)
- Motor control
Advantages:
- High voltage capability
- Low gate charge for reduced switching losses
- Robust thermal performance
Ideal for medium-power switching where efficiency and reliability are critical. Check the datasheet for detailed specs.
Equivalent
- STP6N80K5 (STMicroelectronics)
- IRFBE30 (Infineon)
- FQP6N80 (Fairchild/ON Semiconductor)
- 2SK3562 (Toshiba)
These are similar N-channel MOSFETs with comparable voltage/current ratings. Verify datasheets for exact specs and pin compatibility.
Features
- Voltage Rating: 800V drain-source voltage (VDSS), suitable for high-voltage applications.
- Current Rating: 6A continuous drain current (ID).
- Low On-Resistance: 1.8Ω (max) at VGS = 10V, reducing conduction losses.
- Fast Switching: Optimized for high-speed switching applications.
- Low Gate Charge (Qg): Enhances efficiency in power circuits.
- Avalanche Energy Rated: Improves reliability in rugged conditions.
- Package: TO-220F (fully isolated), aiding thermal dissipation.
Ideal for SMPS, lighting, and motor control due to its high voltage and efficiency.
Pinout
1. Gate (G): Controls the switching operation (voltage applied here turns the MOSFET on/off).
2. Drain (D): Connects to the load (high-voltage/high-current side).
3. Source (S): Ground/reference connection.
Key Specifications:
- Voltage Rating: 800V
- Current Rating: 6A
- RDS(on): ~1.2Ω (typical at 10V VGS)
- Application: Power switching (e.g., SMPS, inverters, motor drives).
The TO-220F package is lead-free and suitable for through-hole mounting with a thermal pad for heat dissipation.
Manufacturer
onsemi is a global semiconductor company specializing in energy-efficient technologies, including power management, analog, and sensor solutions. They serve industries like automotive, industrial, and consumer electronics, focusing on innovation and sustainability.
The FQPF6N80C is designed for high-voltage, high-speed switching applications, reflecting onsemi's expertise in power electronics.
Application
1. Power Supplies – Switching regulators, AC-DC converters.
2. Motor Control – Drives for brushed/brushless motors.
3. Lighting Systems – LED drivers, ballast controls.
4. DC-DC Converters – Step-up/down voltage regulation.
5. Industrial & Automotive – Relays, solenoids, and inverters.
With an 800V drain-source voltage and low on-resistance, it suits high-voltage, medium-power applications efficiently.
