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GALI-51F+
+BOMIC RF AMP CELL 0HZ-4GHZ SOT89
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Nhà sản xuấtMini-mạch
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Ông. Phần #GALI-51F+
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Bảng dữ liệu GALI-51F+ DataSheet
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Gói TO-243AA
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Có sẵn530
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | Mini-Circuits |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| Frequency | 0Hz ~ 4GHz |
| P1dB | 15.9dBm |
| Gain | 13.3dB |
| NoiseFigure | 3.5dB |
| RFType | Cellular, PCS |
| Voltage-Supply | 4V ~ 5V |
| Current-Supply | 50mA |
| TestFrequency | 1GHz |
| MountingType | Surface Mount |
| Package/Case | TO-243AA |
Tổng quan
Description
In speculative settings, GALI-51F+ might be portrayed as an AI system designed for complex problem-solving, a space probe or vehicle for interstellar exploration, or a sophisticated tool for scientific research. Such entities typically embody cutting-edge advancements in technology, pushing the boundaries of current scientific understanding and capabilities.
The introduction of GALI-51F+ in narratives usually serves to explore themes like the impact of technology on society, ethical dilemmas, or the future of human exploration beyond Earth. By examining its functions and implications, creators engage audiences in imagining potential futures shaped by technological innovation.
Equivalent
1. Analog Devices HMC374
2. Qorvo QPL9057
3. Infineon BGA2850
These alternatives should be checked for specific application requirements, as parameters like noise figure, gain, and linearity may vary slightly. Always review detailed datasheets to ensure compatibility.
Features
1. Wideband Performance: Operates across a broad frequency range, typically from 0.05 to 3 GHz, making it versatile for multiple RF applications.
2. High Gain: Provides substantial gain, often around 20 dB, which enhances signal strength.
3. Low Noise Figure: Offers a low noise figure to ensure minimal signal degradation, crucial for sensitive applications.
4. High Output Power: Delivers a high output power, usually around +20 dBm, suitable for driving RF loads effectively.
5. High IP3: Exhibits excellent third-order intercept point (IP3) performance, ensuring linearity and reducing distortion in complex signal environments.
6. Robust Design: Features a durable construction with a wide operating temperature range, enhancing reliability in diverse conditions.
7. Ease of Integration: Comes in a compact package, facilitating integration into various RF systems without significant layout changes.
These features make the GALI-51F+ a popular choice in RF amplification for telecommunications, broadcasting, and other wireless communication systems.
Pinout
1. Pin 1: RF Input - This is where the radio frequency signal enters the amplifier. The input is designed for a broad range of frequencies, making the GALI-51F+ suitable for various applications.
2. Pin 2: Ground - This pin is connected to the ground of the circuit. It is essential for proper biasing and operation of the amplifier.
3. Pin 3: RF Output & DC Power - This pin serves a dual purpose. It outputs the amplified RF signal and also provides the connection for the DC supply voltage needed to power the amplifier.
The GALI-51F+ is commonly used in applications requiring wideband amplification due to its wide frequency range and robust performance.