GD25B512MEFIRR

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GD25B512MEFIRR

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IC FLASH 512MBIT SPI/QUAD 16SOP

  • Nhà sản xuấtGigaDevice Semiconductor (HK) Limited

  • Ông. Phần #GD25B512MEFIRR

  • Có sẵn11598

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Thông số kỹ thuật

thuộc tính Giá trị
Series GD25B
Part Status Active
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR (SLC)
Memory Size 512Mbit
Memory Organization 64M x 8
Memory Interface SPI - Quad I/O, QPI, DTR
Clock Frequency 133 MHz
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package 16-SOP
Packaging Tape & Reel (TR)

Tổng quan

Description

GD25B512MEFIRR is a 512‑Mbit serial NOR flash memory from GigaDevice (GD25B family). It provides non-volatile storage for firmware, parameters, and data in embedded systems, using a standard SPI-compatible serial interface to Read, Page Program, and erase data by sectors/blocks or the entire chip. It supports typical memory-protection and security features with status/flag registers for reliable operation in bootloaders and firmware storage. The 512‑Mbit capacity equals about 64 MB of user data at byte granularity, suitable for code and data storage in microcontrollers, SoCs, and embedded systems. The device is designed for low pin count and compact boards and is offered in various voltage/temperature/package options; exact specs vary by part variant. For design-in notes, timing, endurance, and the full command set, consult the GD25B512MEFIRR datasheet from GigaDevice.

Equivalent

Equivalent parts (512 Mb SPI NOR flash) to GD25B512MEFIRR:
- Winbond W25Q512JV
- Macronix MX25L51245G
- Spansion S25FL512S
- Micron N25Q512A
Note: verify exact voltage, timing, and packaging (EFIRR) for your design.

Features

Here are the key features of GD25B512MEFIRR (512‑Mbit serial flash):
- Capacity: 512 Mbit (64 MByte) non-volatile flash
- Interface: SPI serial interface; supports fast read up to 104 MHz
- Voltage: 2.7–3.6 V operation
- Memory organization: 256-byte pages
- Erase/Program: Page program; Sector erase (4 KB); Block erase (64 KB); Chip erase
- Endurance/Data retention: ~100k program/erase cycles per sector; data retention ~20 years
- Low power: Deep power-down mode with quick wake-up
- Security/protection: Block and sector protection with write-protect features
- Status: Status register and busy flag for operation monitoring
- Packaging: 8-pin package variant (MEFIRR per datasheet)
Note: For exact electrical characteristics, timing, and grade ranges (commercial/industrial), please consult the current datasheet.

Pinout

- Pin count: 8 pins (SOP-8 / SOIC-8)
- Function: GD25B512MEFIRR is a 512 Mbit serial SPI flash memory device (non-volatile) with SPI interface (CS, CLK, MOSI, MISO) plus WP and HOLD, for storage of firmware/data and typical read/erase/program operations.

Manufacturer

- Manufacturer: GigaDevice Semiconductor (Beijing) Co., Ltd., commonly known as GigaDevice.
- What kind of company: A Chinese semiconductor company that designs and markets flash memory and microcontroller products; it is typically considered a fabless memory company, outsourcing manufacturing to foundries.

Application

GD25B512MEFIRR is a 512-Mbit SPI NOR flash from GigaDevice. Typical applications include:
- Embedded systems for program code storage and non-volatile data storage
- Boot flash and firmware update storage for MCUs/MPUs, automotive ECUs and industrial controllers
- Non-volatile data logging in sensors, meters, wearables and portable devices
- Firmware and lookup table storage in networking gear, set-top boxes, printers and other consumer electronics
- Any embedded application needing high-density, low-pin-count non-volatile memory with fast random read.

Package

8-pin SOP (SOIC-8) package.

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