Hình ảnh chỉ để tham khảo
GD25LE128ELIGR
+BOMIC FLSH 128MBIT SPI/QUAD 16WLCSP
-
Nhà sản xuấtGigaDevice Semiconductor (HK) Limited
-
Ông. Phần #GD25LE128ELIGR
-
Có sẵn25735
365 Đảm bảo chất lượng ngày
7*24 giờ dịch vụ quarantee
90-Bảo hành sau bán hàng ngày
Bảo hành sản phẩm chính xác
Thông số kỹ thuật
| thuộc tính | Giá trị |
| Series | GD25LE |
| PartStatus | Active |
| BaseProductNumber | GD25LE128 |
| MemoryType | Non-Volatile |
| MemoryFormat | FLASH |
| Technology | FLASH - NOR (SLC) |
| MemorySize | 128Mbit |
| MemoryOrganization | 16M x 8 |
| MemoryInterface | SPI - Quad I/O, QPI |
| ClockFrequency | 133 MHz |
| WriteCycleTime-Word,Page | 60µs, 2.4ms |
| Voltage-Supply | 1.65V ~ 2V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package | 16-XFBGA, WLCSP |
| SupplierDevicePackage | 16-WLCSP |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
| AccessTime | 6 ns |
Tổng quan
Description
Key points:
- Voltage: 2.7–3.6 V (low‑voltage operation)
- Interface: standard SPI with fast read
- Memory organization: 128 Mbit total, typically with 256‑byte pages
- Erase/program: 4 KB sectors and larger blocks; chip erase option
- Features: deep power‑down, wake‑up, write protection and status/protect registers
- Packaging: ELIGR denotes a specific packaging/lead‑free RoHS option (often 8‑pin), see datasheet for exact package and temperature grade
Typical uses: boot memory for microcontrollers, firmware storage/updates, and data logging in embedded systems. For exact timings, speeds, package details, and electrical specs, consult the GD25LE128ELIGR datasheet.
Equivalent
- Winbond W25Q128FV/JV
- Macronix MX25L12845G (and MX25U12845G)
- ISSI IS25LP128D
- Cypress/Spansion S25FL128S (S25FL128SAG)
- Direct cross: GigaDevice GD25Q128E
Note: voltage/ timing specs vary by part; verify Vcc and timing for your design.
Features
- Density: 128 Mbit serial flash memory
- Interface: SPI withDual I/O and Quad I/O (QPI) modes for higher throughput
- Addressing: 3-byte addressing (no 4-byte mode needed for 128 Mbit)
- Page programming: 256-byte page program
- Erase granularity: 4 KB sectors; 32 KB and 64 KB blocks; chip erase option
- Read speed: Fast/continuous read up to high MHz with quad/dual I/O
- Endurance/data retention: typical 100k P/E cycles; data retention ~20 years
- Power modes: Deep power-down and low-power standby
- Security/protection: sector protection and standard security features (WP/ protection registers)
- Voltage: designed for low-voltage operation (typical VCC in the 2.7–3.6 V range; IO level compatible with VCC)
- Temperature: wide operating range suitable for industrial use (-40°C to ~85°C)
- Package: 8-pin package (SOP8/SOIC8), RoHS-compliant
Note: exact voltage range and temperature specs depend on specific grade; refer to the datasheet for precise numbers.
Pinout
- Function: 128 Mbit serial flash memory with SPI interface. Pins provide: CS# (chip select), CLK (clock), DI (data in / MOSI), DO (data out / MISO), WP# (write protect), HOLD#, VCC, and GND.
Manufacturer
- Company type: A fabless semiconductor company that designs and markets non-volatile memory products (NOR/NAND SPI flash) and microcontrollers, outsourcing fabrication to foundries.
Application
- Firmware storage and boot/loaders for MCUs/SoCs
- Execute-in-place (XiP) memory for embedded software
- Field firmware updates and recovery in IoT, industrial, and automotive devices
- Data logging, configuration, and calibration data storage
- Non-volatile memory for consumer electronics, wearables, and smart devices
- Any system needing reliable, low-power, high-density code/data storage
Note: Provides high-speed reads and protection features suitable for embedded applications.