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GSGP03150
+BOMMOSFET, N-CH, SINGLE, 150A, 30V,
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Nhà sản xuấtGood-Ark Semiconductor
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Ông. Phần #GSGP03150
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Bảng dữ liệu GSGP03150 DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3372 pF @ 15 V |
| Power Dissipation (Max) | 85W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PPAK (4.9x5.8) |
| Package / Case | 8-PowerTDFN |
Tổng quan
Description
Equivalent
Features
1. High Efficiency: Designed for efficient energy conversion and minimal power loss.
2. Compact Design: Small form factor suitable for integration into various systems.
3. Thermal Management: Equipped with features to handle heat dissipation effectively.
4. Wide Input Voltage Range: Can operate effectively across a range of input voltages, making it versatile for different applications.
5. Protection Mechanisms: Includes over-voltage, over-current, and short-circuit protection to enhance reliability and safety.
6. Low Noise Operation: Minimizes electromagnetic interference, which is critical in sensitive electronic environments.
7. Fast Switching Speed: Enhances performance in applications requiring quick response times.
For detailed specifications, consulting the datasheet from the manufacturer is recommended.
Pinout
Manufacturer
Application
1. Telecommunications: Enhancing the efficiency and performance of RF amplifiers in base stations.
2. Radar Systems: Improving signal processing and power efficiency in both military and civilian radar systems.
3. Aerospace and Defense: Used in electronic warfare and advanced communication systems.
4. Power Electronics: Contributing to efficient power conversion in power supplies and inverters.
5. Broadcasting: Supporting high-power RF transmission for television and radio broadcasting.
These application areas benefit from the high power density, efficiency, and thermal performance of GaN transistors.