HMC1035LP6GE

Hình ảnh chỉ để tham khảo

HMC1035LP6GE

+BOM

IC CLOCK GEN 1:1 2.5GHZ 40-SMT

365 Đảm bảo chất lượng ngày

7*24 giờ dịch vụ quarantee

90-Bảo hành sau bán hàng ngày

Bảo hành sản phẩm chính xác

Thông số kỹ thuật

thuộc tính Giá trị
Package Bulk,Strip
ProductStatus Obsolete
PLL Yes
Input Clock
Output LVDS, LVPECL
NumberofCircuits 1
Ratio-Input:Output 1:2
Differential-Input:Output No/Yes
Frequency-Max 2.5GHz
Divider/Multiplier Yes/No
Voltage-Supply 3.15V ~ 3.5V
OperatingTemperature -40°C ~ 85°C
MountingType Surface Mount
Package/Case 40-VFQFN Exposed Pad

Tổng quan

Description

The HMC1035LP6GE is a GaAs MMIC Low Noise Amplifier (LNA) from Analog Devices, designed for high-frequency applications (up to 40 GHz). Key features include:
- Frequency Range: 24–35 GHz (optimized for 5G, satellite, and radar systems).
- Low Noise Figure: ~2.5 dB (enhances signal clarity).
- High Gain: ~20 dB (improves weak signal reception).
- Compact Package: 6-lead LP6 (1.5×1.5 mm) for space-constrained designs.
- Supply Voltage: +3V (low power consumption).
Ideal for millimeter-wave communications, aerospace, and defense due to its performance, small size, and reliability.

Equivalent

Equivalent products to the HMC1035LP6GE (a 6 GHz to 26 GHz GaAs MMIC SPDT switch) include:
- HMC1114LP5E (DC-20 GHz SPDT switch)
- HMC344LP3E (DC-14 GHz SPDT switch)
- SKY13370-385LF (DC-6 GHz SPDT switch, lower frequency)
- ADRF5046 (DC-44 GHz SPDT switch, broader range)
For exact replacements, check frequency range, power handling, and package compatibility.

Features

The HMC1035LP6GE is a 6 GHz to 18 GHz GaAs MMIC Low-Noise Amplifier (LNA) with the following key features:
- Frequency Range: 6 GHz to 18 GHz
- Low Noise Figure: 2.5 dB (typical)
- High Gain: 20 dB (typical)
- High P1dB Output Power: +18 dBm
- Single +5V Supply Operation
- 50 Ω Matched Input/Output
- Compact 6-lead LP6 (3x3 mm) SMT Package
- ESD Protection (Class 1C)
Ideal for microwave radios, SATCOM, radar, and EW systems.

Pinout

The HMC1035LP6GE is a 6-pin SMT-packaged GaAs pHEMT MMIC Low Noise Amplifier (LNA) from Analog Devices.
Pin Functions:
1. RF IN (Pin 1): RF input (50Ω matched).
2. GND (Pins 2, 4, 6): Ground connections.
3. RF OUT (Pin 3): RF output (50Ω matched).
4. VDD (Pin 5): Supply voltage (typically +3V).
Key Features:
- Frequency range: 24–35 GHz (Ka-band).
- Low noise figure (2.5 dB typical).
- High gain (20 dB typical).
Designed for satellite, 5G, and radar applications.

Manufacturer

The HMC1035LP6GE is manufactured by Analog Devices, Inc. (ADI), a leading global semiconductor company specializing in high-performance analog, mixed-signal, and digital signal processing (DSP) integrated circuits. ADI is known for its innovation in precision data conversion, signal conditioning, and RF (radio frequency) technologies, serving industries like automotive, communications, industrial, and healthcare.
The HMC1035LP6GE is a GaAs MMIC I/Q Downconverter used in RF applications, reflecting ADI's expertise in advanced RF and microwave components.

Application

The HMC1035LP6GE is a GaAs MMIC Low Noise Amplifier (LNA) designed for high-frequency applications. Key application areas include:
- Radar Systems (military, automotive, and weather radar)
- Satellite Communications (VSAT, LEO/MEO/GEO satellite links)
- 5G & Wireless Infrastructure (millimeter-wave and microwave backhaul)
- Test & Measurement Equipment (signal analyzers, spectrum monitoring)
- Electronic Warfare (EW) & Defense Systems (jamming, signal intelligence)
Its low noise figure (1.5 dB) and high gain (18 dB) make it ideal for sensitive RF front-end designs.

Sản phẩm liên quan đến HMC1035LP6GE

So sánh liên quan

  • Trích dẫn nhanh chóng

  • Gửi yêu cầu báo giá của bạn cho HMC1035LP6GE sử dụng biểu mẫu này.chúng tôi sẽ trả lời trong vòng 12 giờ.