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IPB020N10N5ATMA1
+BOMMOSFET N-CH 100V 120A D2PAK
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IPB020N10N5ATMA1
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Bảng dữ liệu IPB020N10N5ATMA1 DataSheet
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Gói TO-263-3
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Có sẵn4418
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | OptiMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 120A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 2mOhm @ 100A, 10V |
| Vgs(th)(Max) @ Id | 3.8V @ 270µA |
| Gate Charge(Qg)(Max) @ Vgs | 210 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 15600 pF @ 50 V |
| Power Dissipation (Max) | 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3 |
Tổng quan
Description
The IPB020N10N5ATMA1 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed for use in a variety of electronic applications that require efficient power management. Key features of this MOSFET include a low on-resistance, which allows for reduced power loss and improved efficiency in switching applications. It also has a high-speed switching capability, making it suitable for use in high-frequency power conversion circuits.
This MOSFET is typically used in applications such as DC-DC converters, power supply units, motor drives, and other systems requiring reliable switching performance. The device is packaged in a standard TO-220 package, which provides good thermal performance and easy integration into existing circuit designs. Its robustness and reliability make it a popular choice for engineers looking to optimize power efficiency in their designs.
Overall, the IPB020N10N5ATMA1 is valued for its efficient performance, durability, and versatility in various power electronic applications.
This MOSFET is typically used in applications such as DC-DC converters, power supply units, motor drives, and other systems requiring reliable switching performance. The device is packaged in a standard TO-220 package, which provides good thermal performance and easy integration into existing circuit designs. Its robustness and reliability make it a popular choice for engineers looking to optimize power efficiency in their designs.
Overall, the IPB020N10N5ATMA1 is valued for its efficient performance, durability, and versatility in various power electronic applications.
Equivalent
The IPB020N10N5ATMA1 is an Infineon N-channel MOSFET. Equivalent products could include:
1. STMicroelectronics STL120N10F7 - A similar N-channel MOSFET with comparable specifications.
2. ON Semiconductor NVMFS5C645NL - Offers similar current and voltage ratings.
3. Vishay Siliconix SiR640DP - Another MOSFET with analogous specifications.
4. Alpha & Omega Semiconductor AON6508 - Matches many of the same electrical characteristics.
These equivalents should be verified for exact matching characteristics and pin compatibility.
1. STMicroelectronics STL120N10F7 - A similar N-channel MOSFET with comparable specifications.
2. ON Semiconductor NVMFS5C645NL - Offers similar current and voltage ratings.
3. Vishay Siliconix SiR640DP - Another MOSFET with analogous specifications.
4. Alpha & Omega Semiconductor AON6508 - Matches many of the same electrical characteristics.
These equivalents should be verified for exact matching characteristics and pin compatibility.
Features
The IPB020N10N5ATMA1 is a power MOSFET from Infineon Technologies, designed for use in various electronic applications. Here are its key features:
1. N-Channel MOSFET: It's an N-channel device, which is commonly used for high-speed switching applications.
2. Voltage and Current Ratings: The MOSFET has a maximum drain-source voltage (V_ds) of 100V and a continuous drain current (I_d) of approximately 120A, making it suitable for high-power applications.
3. Low On-Resistance: It offers a low R_ds(on) value, which is critical for reducing power loss and improving efficiency in applications.
4. Fast Switching: The device is built to support fast switching speeds, enhancing performance in applications requiring quick turn-on and turn-off times.
5. Thermal Performance: It features efficient thermal management capabilities, often encapsulated in a TO-220 package that helps in heat dissipation.
6. Applications: Ideal for use in power management systems, DC-DC converters, motor drives, and other high-efficiency power supply systems.
These features make the IPB020N10N5ATMA1 a versatile component in modern electronic design, particularly where efficiency and reliability are paramount.
1. N-Channel MOSFET: It's an N-channel device, which is commonly used for high-speed switching applications.
2. Voltage and Current Ratings: The MOSFET has a maximum drain-source voltage (V_ds) of 100V and a continuous drain current (I_d) of approximately 120A, making it suitable for high-power applications.
3. Low On-Resistance: It offers a low R_ds(on) value, which is critical for reducing power loss and improving efficiency in applications.
4. Fast Switching: The device is built to support fast switching speeds, enhancing performance in applications requiring quick turn-on and turn-off times.
5. Thermal Performance: It features efficient thermal management capabilities, often encapsulated in a TO-220 package that helps in heat dissipation.
6. Applications: Ideal for use in power management systems, DC-DC converters, motor drives, and other high-efficiency power supply systems.
These features make the IPB020N10N5ATMA1 a versatile component in modern electronic design, particularly where efficiency and reliability are paramount.
Pinout
The IPB020N10N5ATMA1 is a power MOSFET manufactured by Infineon Technologies. It typically comes in a TO-263-3 package, also known as D2PAK, which has three pins. Here are the pin functions:
1. Drain (D): This is the terminal through which the current flows into the MOSFET from the load. It is connected to the main power supply in most applications.
2. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET can be turned on or off, allowing or stopping current flow between the drain and source.
3. Source (S): This is the terminal through which the current exits the MOSFET to the ground or the load.
The IPB020N10N5ATMA1 is designed for low resistance and fast switching, making it suitable for high-efficiency power management applications.
1. Drain (D): This is the terminal through which the current flows into the MOSFET from the load. It is connected to the main power supply in most applications.
2. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET can be turned on or off, allowing or stopping current flow between the drain and source.
3. Source (S): This is the terminal through which the current exits the MOSFET to the ground or the load.
The IPB020N10N5ATMA1 is designed for low resistance and fast switching, making it suitable for high-efficiency power management applications.
Manufacturer
The manufacturer of the IPB020N10N5ATMA1 is Infineon Technologies AG. Infineon is a German semiconductor manufacturer known for its various electronic components and systems. The company is a major player in the semiconductor industry and produces products used in a wide range of applications, including automotive, industrial, consumer electronics, and communication systems. Infineon specializes in power semiconductors, microcontrollers, sensors, and security solutions.
Application
The IPB020N10N5ATMA1 is a power MOSFET commonly used in various applications due to its efficiency and reliability. Key application areas include:
1. Automotive Systems: Utilized in powertrain, body electronics, and infotainment systems.
2. Industrial Automation: Employed in motor control, robotics, and power management.
3. Consumer Electronics: Used in power supplies, battery management, and portable devices.
4. Renewable Energy Systems: Integrated into solar inverters and energy storage systems.
5. Telecommunications: Supports power distribution in networking equipment.
These applications leverage the MOSFET's low on-state resistance and high-speed switching capabilities for improved performance and energy efficiency.
1. Automotive Systems: Utilized in powertrain, body electronics, and infotainment systems.
2. Industrial Automation: Employed in motor control, robotics, and power management.
3. Consumer Electronics: Used in power supplies, battery management, and portable devices.
4. Renewable Energy Systems: Integrated into solar inverters and energy storage systems.
5. Telecommunications: Supports power distribution in networking equipment.
These applications leverage the MOSFET's low on-state resistance and high-speed switching capabilities for improved performance and energy efficiency.
Package
The IPB020N10N5ATMA1 is a power MOSFET with a TO-263-3 package type, also known as a D2PAK. This package is designed for surface-mount technology and is widely used in power electronics applications due to its efficient thermal performance and compact size.
