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IPB026N06N
+BOM-
Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IPB026N06N
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Technology | Si |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Series | OptiMOS 5 |
| Factory Pack Quantity | 1000 |
| Subcategory | Transistors |
| Part # Aliases | SP000962142 IPB26N6NXT IPB026N06NATMA1 |
| Mounting Type | SMD/SMT |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Height | 4.4 mm |
| Length | 10 mm |
| Width | 9.25 mm |
| Unit Weight | 0.139332 oz |
| Package / Case | D2PAK-3 (TO-263-3) |
| Configuration | Single |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 100 A |
| Rds On | 2.3 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 2.1 V |
| Qg - Gate Charge | 66 nC |
| Pd - Power Dissipation | 136 W |
| Channel Mode | Enhancement |
| Fall Time | 8 ns |
| Rise Time | 15 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 30 ns |
| Typical Turn - On Delay Time | 17 ns |
| REACH - SVHC | Details |
| Forward Transconductance - Min | 80 S |
Tổng quan
Description
IPB026N06N is a 60V N-channel MOSFET designed for a variety of power management applications. It features a low on-resistance, which enhances efficiency and minimizes heat generation during operation. This MOSFET is suitable for use in DC-DC converters, motor drivers, and power switching applications due to its fast switching capabilities and robust performance.
Key specifications typically include a maximum continuous drain current, a low gate threshold voltage, and a high maximum pulsed drain current rating. Its compact package design allows for easy integration into circuit boards, making it ideal for space-constrained applications.
The IPB026N06N is often used in automotive, industrial, and consumer electronics, where reliable performance and energy efficiency are crucial. Overall, it represents a reliable choice for engineers seeking efficient power management solutions in modern electronic designs.
Key specifications typically include a maximum continuous drain current, a low gate threshold voltage, and a high maximum pulsed drain current rating. Its compact package design allows for easy integration into circuit boards, making it ideal for space-constrained applications.
The IPB026N06N is often used in automotive, industrial, and consumer electronics, where reliable performance and energy efficiency are crucial. Overall, it represents a reliable choice for engineers seeking efficient power management solutions in modern electronic designs.
Equivalent
The IPB026N06N is a N-channel MOSFET. Equivalent products include:
1. IRF260
2. STP26NF06
3. FQP26N06
4. BSC026N06
5. SI7466DP
Always verify specifications such as voltage, current, and RDS(on) to ensure compatibility for your specific application.
1. IRF260
2. STP26NF06
3. FQP26N06
4. BSC026N06
5. SI7466DP
Always verify specifications such as voltage, current, and RDS(on) to ensure compatibility for your specific application.
Features
The IPB026N06N is a N-channel MOSFET designed for efficient power management. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various applications.
2. Current Rating: The continuous drain current (I_D) can reach up to 26A, offering robust performance for high-current applications.
3. Low On-resistance: With a low R_DS(on), typically around 0.025 ohms, it minimizes conduction losses, enhancing efficiency.
4. Fast Switching Speed: The device supports high-frequency operation, ideal for switching applications in power supplies and converters.
5. Thermal Performance: It has good thermal stability and can handle significant power dissipation, with a maximum junction temperature of 175°C.
6. Package: Usually available in a TO-220 or similar package, facilitating easy mounting and heat dissipation.
These features make the IPB026N06N suitable for applications like DC-DC converters, motor drives, and power management systems.
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various applications.
2. Current Rating: The continuous drain current (I_D) can reach up to 26A, offering robust performance for high-current applications.
3. Low On-resistance: With a low R_DS(on), typically around 0.025 ohms, it minimizes conduction losses, enhancing efficiency.
4. Fast Switching Speed: The device supports high-frequency operation, ideal for switching applications in power supplies and converters.
5. Thermal Performance: It has good thermal stability and can handle significant power dissipation, with a maximum junction temperature of 175°C.
6. Package: Usually available in a TO-220 or similar package, facilitating easy mounting and heat dissipation.
These features make the IPB026N06N suitable for applications like DC-DC converters, motor drives, and power management systems.
Pinout
The IPB026N06N is a N-channel MOSFET with a total of three pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): The drain pin is where the current enters the MOSFET. It is connected to the load or power supply.
3. Source (S): The source pin is where the current exits the MOSFET. It is typically connected to ground or the lower potential in a circuit.
The IPB026N06N is designed to handle high currents and voltages, making it suitable for various applications in power management, switching, and amplification.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): The drain pin is where the current enters the MOSFET. It is connected to the load or power supply.
3. Source (S): The source pin is where the current exits the MOSFET. It is typically connected to ground or the lower potential in a circuit.
The IPB026N06N is designed to handle high currents and voltages, making it suitable for various applications in power management, switching, and amplification.
Application
The IPB026N06N is a N-channel MOSFET commonly used in power management applications. Its primary application areas include:
1. DC-DC Converters: Used in buck or boost converters for efficient voltage regulation.
2. Power Supply Units (PSUs): Facilitates efficient switching in power supplies for various electronic devices.
3. Motor Control: Utilized in driving motors in automotive and industrial applications.
4. Switching Applications: Serves as a switch in various electronic circuits.
5. Battery Management Systems: Helps in managing charging and discharging processes efficiently.
Its low on-resistance and high current capability make it suitable for high-efficiency designs.
1. DC-DC Converters: Used in buck or boost converters for efficient voltage regulation.
2. Power Supply Units (PSUs): Facilitates efficient switching in power supplies for various electronic devices.
3. Motor Control: Utilized in driving motors in automotive and industrial applications.
4. Switching Applications: Serves as a switch in various electronic circuits.
5. Battery Management Systems: Helps in managing charging and discharging processes efficiently.
Its low on-resistance and high current capability make it suitable for high-efficiency designs.
Package
The IPB026N06N is packaged in a TO-220 format, which is a robust, insulated package commonly used for power MOSFETs. This type of package allows for effective heat dissipation and facilitates easier mounting to heatsinks, making it suitable for high-power applications.
