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IPB042N10N3GATMA1
+BOMMOSFET N-CH 100V 100A D2PAK
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IPB042N10N3GATMA1
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Series | OptiMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 8410 pF @ 50 V |
| Power Dissipation (Max) | 214W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3 |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Base Product Number | IPB042 |
Tổng quan
Description
The IPB042N10N3GATMA1 is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power applications. It features a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) rating of up to 42A. This MOSFET is characterized by its low on-resistance (Rds(on)), which helps improve efficiency and reduce heat generation during operation.
The device is suitable for various applications, including power supplies, motor drives, and automotive systems due to its high switching speed and thermal performance. It typically comes in a TO-220 package, facilitating effective heat dissipation. The IPB042N10N3GATMA1 is part of Infineon's product lineup, reflecting advancements in semiconductor technology for better energy management and performance in electronic circuits.
Overall, its robust specifications and reliability make it a popular choice for engineers looking to enhance their designs in high-performance applications.
The device is suitable for various applications, including power supplies, motor drives, and automotive systems due to its high switching speed and thermal performance. It typically comes in a TO-220 package, facilitating effective heat dissipation. The IPB042N10N3GATMA1 is part of Infineon's product lineup, reflecting advancements in semiconductor technology for better energy management and performance in electronic circuits.
Overall, its robust specifications and reliability make it a popular choice for engineers looking to enhance their designs in high-performance applications.
Equivalent
The IPB042N10N3GATMA1 is a N-channel MOSFET from Infineon, typically serving in power applications. Equivalent products include the IRF840, STP40NF10, and BSS140, though specifications such as voltage and current ratings should be cross-checked for compatibility. Always refer to the datasheets for precise electrical characteristics to ensure suitability for your application.
Features
The IPB042N10N3GATMA1 is a high-performance N-channel MOSFET designed for various applications, particularly in power management and switching. Key features include:
1. Voltage Rating: It has a max drain-source voltage (VDS) of 100V.
2. Current Rating: The continuous drain current (ID) is rated at 42A, suitable for high power applications.
3. On-Resistance (RDS(on)): It offers a low on-resistance of about 4.2 mΩ, which helps in reducing power losses and improving efficiency.
4. Gate Threshold Voltage: The gate-source voltage (VGS) threshold is relatively low, allowing for easy drive with standard logic levels.
5. Thermal Performance: It features a TO-220 package that provides excellent thermal management.
6. Fast Switching: Optimized for fast switching speeds, making it ideal for applications in converters and inverters.
7. Robustness: It has built-in protection features which enhance reliability in demanding environments.
These characteristics make the IPB042N10N3GATMA1 suitable for automotive, industrial, and consumer electronics applications.
1. Voltage Rating: It has a max drain-source voltage (VDS) of 100V.
2. Current Rating: The continuous drain current (ID) is rated at 42A, suitable for high power applications.
3. On-Resistance (RDS(on)): It offers a low on-resistance of about 4.2 mΩ, which helps in reducing power losses and improving efficiency.
4. Gate Threshold Voltage: The gate-source voltage (VGS) threshold is relatively low, allowing for easy drive with standard logic levels.
5. Thermal Performance: It features a TO-220 package that provides excellent thermal management.
6. Fast Switching: Optimized for fast switching speeds, making it ideal for applications in converters and inverters.
7. Robustness: It has built-in protection features which enhance reliability in demanding environments.
These characteristics make the IPB042N10N3GATMA1 suitable for automotive, industrial, and consumer electronics applications.
Pinout
The IPB042N10N3GATMA1 is an N-channel MOSFET transistor designed for high-efficiency applications. It typically has a TO-220 package, which features three main pins:
1. Gate (G): The control terminal that turns the MOSFET on or off by applying a voltage.
2. Drain (D): The terminal where the current flows out of the MOSFET when it is in the "on" state.
3. Source (S): The terminal where the current enters the MOSFET.
The specific pin count is three, and the arrangement is as follows when viewed from the top of the package: Gate (left), Drain (middle), Source (right). This MOSFET is commonly used in power management, motor control, and other high-frequency applications due to its low on-resistance and fast switching capabilities.
1. Gate (G): The control terminal that turns the MOSFET on or off by applying a voltage.
2. Drain (D): The terminal where the current flows out of the MOSFET when it is in the "on" state.
3. Source (S): The terminal where the current enters the MOSFET.
The specific pin count is three, and the arrangement is as follows when viewed from the top of the package: Gate (left), Drain (middle), Source (right). This MOSFET is commonly used in power management, motor control, and other high-frequency applications due to its low on-resistance and fast switching capabilities.
Manufacturer
The IPB042N10N3GATMA1 is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer that specializes in power semiconductors, automotive solutions, and microcontrollers, among other electronic components. The company is known for its innovations in various sectors, including automotive, industrial power control, and security technologies. Infineon focuses on providing solutions for energy efficiency, mobility, and security in the connected world. Founded in 1999 as a spin-off from Siemens AG, Infineon has grown to become one of the leading global suppliers in the semiconductor industry, with a commitment to sustainability and technological advancement.
Application
The IPB042N10N3GATMA1 is a N-channel MOSFET primarily used in various applications involving power management and conversion. Key areas include:
1. Switching Power Supplies: Efficiently converting and regulating voltage.
2. DC-DC Converters: Step-down (buck) and step-up (boost) applications.
3. Motor Drives: Controlling speed and torque in electric motors.
4. LED Drivers: Managing LED lighting intensity and efficiency.
5. Battery Management Systems: Safeguarding and optimizing battery operation.
Its low on-resistance and high-speed switching capabilities make it suitable for these applications, enhancing overall efficiency and performance.
1. Switching Power Supplies: Efficiently converting and regulating voltage.
2. DC-DC Converters: Step-down (buck) and step-up (boost) applications.
3. Motor Drives: Controlling speed and torque in electric motors.
4. LED Drivers: Managing LED lighting intensity and efficiency.
5. Battery Management Systems: Safeguarding and optimizing battery operation.
Its low on-resistance and high-speed switching capabilities make it suitable for these applications, enhancing overall efficiency and performance.
Package
The IPB042N10N3GATMA1 is packaged in a TO-220 format. This package type is designed for high-power applications, providing good thermal performance and ease of mounting to heat sinks.
