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IPB044N15N5ATMA1
+BOMMOSFET N-CH 150V 174A TO263-7
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IPB044N15N5ATMA1
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Bảng dữ liệu IPB044N15N5ATMA1 DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | Infineon Technologies |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | OptiMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain(Id) @ 25°C | 174A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 8V, 10V |
| Rds On(Max) @ Id Vgs | 4.4mOhm @ 87A, 10V |
| Vgs(th)(Max) @ Id | 4.6V @ 264µA |
| Gate Charge(Qg)(Max) @ Vgs | 100 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 8000 pF @ 75 V |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7 |
Tổng quan
Description
The IPB044N15N5ATMA1 is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It's designed for use in various electronic applications requiring efficient power switching and management. This component features a low on-resistance, which helps reduce energy loss and improve overall system efficiency, making it suitable for applications in power supplies, automotive electronics, and industrial equipment.
Key characteristics of this MOSFET include its ability to handle high current and voltage levels, making it ideal for power-intensive applications. The IPB044N15N5ATMA1 typically offers fast switching speeds and robust thermal performance, which are crucial for maintaining reliability in demanding environments. It's often used where space is limited, as its compact package supports high-density circuit designs.
Overall, the IPB044N15N5ATMA1 is valued for its efficiency, reliability, and performance in power management solutions, contributing to energy savings and system longevity in industrial and consumer electronics.
Key characteristics of this MOSFET include its ability to handle high current and voltage levels, making it ideal for power-intensive applications. The IPB044N15N5ATMA1 typically offers fast switching speeds and robust thermal performance, which are crucial for maintaining reliability in demanding environments. It's often used where space is limited, as its compact package supports high-density circuit designs.
Overall, the IPB044N15N5ATMA1 is valued for its efficiency, reliability, and performance in power management solutions, contributing to energy savings and system longevity in industrial and consumer electronics.
Equivalent
The IPB044N15N5ATMA1 is a MOSFET from Infineon Technologies, specifically designed for power switching applications. Equivalent products can include MOSFETs from other manufacturers with similar specifications, such as the IRFB4115 from Infineon, FDB045AN15A0 from ON Semiconductor, or STP140NF55 from STMicroelectronics. When selecting an equivalent, ensure that the voltage, current ratings, Rds(on), and package type are compatible with your application requirements.
Features
The Infineon IPB044N15N5ATMA1 is a power MOSFET featuring the following key specifications:
1. Voltage Rating: It has a drain-source voltage (V_DS) of 150V, making it suitable for medium-voltage applications.
2. Current Handling: The device supports a continuous drain current (I_D) of approximately 104A, ensuring robust performance in demanding circuits.
3. R_DS(on): The on-resistance is typically around 4.4 milliohms, which helps minimize power loss and improves efficiency.
4. Technology: It is built using Infineon's OptiMOS™ 5 technology, known for excellent efficiency and performance.
5. Package: The MOSFET comes in a TO-263 package, also known as D2PAK, which facilitates surface-mount applications and offers good thermal performance.
6. Applications: It is often used in applications such as DC-DC converters, motor drives, and synchronous rectification due to its high efficiency and power handling capabilities.
These features make the IPB044N15N5ATMA1 a versatile choice for various high-performance power management applications.
1. Voltage Rating: It has a drain-source voltage (V_DS) of 150V, making it suitable for medium-voltage applications.
2. Current Handling: The device supports a continuous drain current (I_D) of approximately 104A, ensuring robust performance in demanding circuits.
3. R_DS(on): The on-resistance is typically around 4.4 milliohms, which helps minimize power loss and improves efficiency.
4. Technology: It is built using Infineon's OptiMOS™ 5 technology, known for excellent efficiency and performance.
5. Package: The MOSFET comes in a TO-263 package, also known as D2PAK, which facilitates surface-mount applications and offers good thermal performance.
6. Applications: It is often used in applications such as DC-DC converters, motor drives, and synchronous rectification due to its high efficiency and power handling capabilities.
These features make the IPB044N15N5ATMA1 a versatile choice for various high-performance power management applications.
Pinout
The IPB044N15N5ATMA1 is a power MOSFET manufactured by Infineon Technologies. It typically comes in a TO-263-3 package, which suggests it has three pins. The pin configuration for such MOSFETs generally includes:
1. Gate (G): This pin is used to control the switching of the MOSFET. By applying a voltage to the gate, the MOSFET can be turned on or off.
2. Drain (D): This is the pin where the main current enters the MOSFET. It is typically connected to the higher voltage side of the circuit.
3. Source (S): This is the pin where the current exits the MOSFET. It is usually connected to the lower voltage side or ground.
The primary function of the IPB044N15N5ATMA1 is to serve as a switch or amplifier in electronic circuits, handling high-current and high-voltage applications efficiently due to its low on-state resistance.
1. Gate (G): This pin is used to control the switching of the MOSFET. By applying a voltage to the gate, the MOSFET can be turned on or off.
2. Drain (D): This is the pin where the main current enters the MOSFET. It is typically connected to the higher voltage side of the circuit.
3. Source (S): This is the pin where the current exits the MOSFET. It is usually connected to the lower voltage side or ground.
The primary function of the IPB044N15N5ATMA1 is to serve as a switch or amplifier in electronic circuits, handling high-current and high-voltage applications efficiently due to its low on-state resistance.
Manufacturer
The manufacturer of the IPB044N15N5ATMA1 is Infineon Technologies AG. Infineon is a leading global semiconductor company that designs, develops, manufactures, and markets a range of semiconductor solutions. Their products cater to the automotive, industrial, and consumer electronics industries, among others. Infineon's offerings encompass power semiconductors, microcontrollers, sensors, and security ICs. They are recognized for their focus on energy efficiency, mobility, and security in electronic applications.
Application
The IPB044N15N5ATMA1 is a N-channel MOSFET commonly used in applications requiring efficient power management. Its applications include:
1. Power Supply Units (PSUs): It helps in the conversion and regulation of power in various electronic devices.
2. Motor Drives: Utilized in DC motor control due to its high efficiency and fast switching characteristics.
3. DC-DC Converters: Ideal for voltage regulation and conversion in portable electronics.
4. Battery Management Systems: Used in managing charging and discharging cycles.
5. Load Switches: Acts as an efficient electronic switch for turning on/off power to peripherals.
6. Inverters: Suitable for use in inverter circuits for renewable energy systems.
These applications benefit from its low on-resistance and high current handling capability.
1. Power Supply Units (PSUs): It helps in the conversion and regulation of power in various electronic devices.
2. Motor Drives: Utilized in DC motor control due to its high efficiency and fast switching characteristics.
3. DC-DC Converters: Ideal for voltage regulation and conversion in portable electronics.
4. Battery Management Systems: Used in managing charging and discharging cycles.
5. Load Switches: Acts as an efficient electronic switch for turning on/off power to peripherals.
6. Inverters: Suitable for use in inverter circuits for renewable energy systems.
These applications benefit from its low on-resistance and high current handling capability.
Package
The IPB044N15N5ATMA1 is a power MOSFET from Infineon Technologies, housed in a TO-263 package, also known as D2PAK. It is designed for surface mounting and is commonly used in applications requiring efficient power switching.
