IPB072N15N3 G

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IPB072N15N3 G

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MOSFETs N-Ch 150V 100A D2PAK-2 OptiMOS 3

  • Nhà sản xuấtCông nghệ Infineon

  • Ông. Phần #IPB072N15N3 G

  • Bảng dữ liệu IPB072N15N3 G DataSheet

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Description

IPB072N15N3 G appears to be a part number or model code, likely referring to a specific electronic component or product. Such codes are typically used for cataloging and identifying items such as semiconductors, transistors, or integrated circuits. For a precise understanding, it is important to refer to the manufacturer's datasheet or product specifications. These documents provide crucial details about the component's characteristics, such as its electrical properties, recommended applications, and physical dimensions. If you are looking for information on how to use or implement this component in a project, consulting the datasheet and application notes from the manufacturer is essential. Always ensure that the component is compatible with your specific application requirements, including voltage, current, and power ratings. For further assistance, reaching out to the manufacturer or seeking advice from technical support forums might be helpful.

Equivalent

The IPB072N15N3 G is a N-channel MOSFET from Infineon Technologies. Equivalent products are those with similar specifications like voltage rating, current capacity, Rds(on), and package type. Possible equivalents include:
1. Vishay SUD50N15-43
2. ON Semiconductor FQP30N15
3. STMicroelectronics STP80NF10
4. Fairchild FDB7030BL
Always verify specifics like package, performance, and application compatibility.

Features

The IPB072N15N3 G is a power MOSFET developed by Infineon Technologies. It features several specifications and characteristics that make it suitable for a variety of applications:
1. N-Channel MOSFET: This device is an N-channel MOSFET, meaning it uses electrons as the charge carriers.
2. Voltage and Current Ratings: It features a maximum drain-source voltage (V_DS) of 150V and a continuous drain current (I_D) of approximately 82A.
3. R_DS(on): The MOSFET has a low on-resistance (R_DS(on)) of around 7.2 mΩ, minimizing power loss and improving efficiency.
4. Thermal Performance: It is designed with good thermal performance, which helps in handling high power loads efficiently.
5. Package: The component is available in a TO-220 package, facilitating easy mounting and good heat dissipation.
6. Applications: It is commonly used in power management applications, including DC-DC converters, motor control, and other switching applications due to its efficiency and reliability.
These features make the IPB072N15N3 G suitable for high-efficiency and high-reliability applications in power electronics.

Pinout

The IPB072N15N3 G is a power MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency power conversion applications. This specific MOSFET is housed in a TO-263 package, which typically has a standard pin count of three. The pin configuration for this type of package is as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying the appropriate voltage to the gate allows current to flow between the drain and source.

2. Drain (D): This pin is the terminal through which the main current flows when the MOSFET is in the 'on' state.

3. Source (S): This pin is connected to the ground or the negative side of the power supply, completing the circuit when the MOSFET is activated.
The IPB072N15N3 G is designed to handle substantial amounts of power, with a voltage rating of 150V and a low on-resistance, making it suitable for use in power management and switching applications.

Manufacturer

The IPB072N15N3 G is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer that focuses on producing a broad range of semiconductor solutions. These solutions cater to various applications, including automotive, industrial power control, power management, and digital security markets. Infineon is known for its innovations in power electronics, automotive microcontrollers, and sensors, contributing to advancements in energy efficiency, mobility, and security technologies.

Application

The IPB072N15N3 G is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with applications primarily in power management and switching. Common uses include:
1. Power Supplies: Efficient switching in power supply units for computers and electronics.
2. Motor Control: Drives motors in applications like robotics and industrial machinery.
3. DC-DC Converters: Facilitates efficient voltage regulation.
4. Battery Management: Used in battery protection circuits and chargers.
5. Inverters: Converts DC to AC in solar inverters and uninterruptible power supplies.
6. Automotive: Used in various electronic control units for efficient power distribution.
Its low on-resistance and high-speed switching capabilities make it suitable for these applications.

Package

The IPB072N15N3 G is a power MOSFET from Infineon Technologies, and it typically comes in a TO-263 package, also known as D2PAK. This package type is suitable for surface-mount applications and provides efficient thermal performance for high-power operations.

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