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IPD30N03S2L-20
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IPD30N03S2L-20
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Technology | Si |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Factory Pack Quantity | 2500 |
| Subcategory | Transistors |
| Part # Aliases | SP000254466 IPD3N3S2L2XT IPD30N03S2L20ATMA1 |
| Mounting Type | SMD/SMT |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Width | 6.22 mm |
| Unit Weight | 0.011640 oz |
| Package / Case | DPAK-3 (TO-252-3) |
| Configuration | Single |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 30 A |
| Rds On | 14.5 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 1.2 V |
| Qg - Gate Charge | 19 nC |
| Pd - Power Dissipation | 60 W |
| Channel Mode | Enhancement |
| Fall Time | 10 ns |
| Rise Time | 15 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 19 ns |
| Typical Turn - On Delay Time | 5 ns |
| Qualification | AEC-Q100 |
| REACH - SVHC | Details |
Tổng quan
Description
This MOSFET is housed in TO-220 packaging, facilitating efficient heat dissipation, which is crucial for high-power applications. The device offers a low R_DS(on) (drain-source on-resistance), enabling reduced power losses and improved efficiency, particularly in switching applications.
Its gate threshold voltage is designed for compatibility with standard logic levels, making it easy to integrate into existing circuits. The IPD30N03S2L-20 also features fast switching speeds, allowing for high-frequency operation. Overall, this MOSFET is an excellent choice for engineers looking for reliable performance in power electronics.
Equivalent
Features
1. Voltage Ratings: It has a maximum drain-source voltage (V_DS) of 30V, suitable for low-voltage applications.
2. On-Resistance: The device exhibits a low on-resistance (R_DS(on)), typically around 8.5 mΩ, which enhances efficiency and reduces heat generation.
3. Current Handling: It can handle a continuous drain current (I_D) of up to 30A, making it suitable for high-current applications.
4. Fast Switching: The MOSFET supports fast switching speeds, beneficial for applications such as DC-DC converters and motor drivers.
5. Package: It is available in a DPAK package, providing good thermal performance and ease of mounting on PCBs.
6. Thermal Resistance: The low thermal resistance ensures effective heat dissipation, enhancing reliability in demanding environments.
These features make the IPD30N03S2L-20 ideal for power management tasks in consumer electronics, automotive systems, and industrial applications.
Pinout
1. Gate (G): Controls the switching of the MOSFET on and off.
2. Drain (D): The terminal through which the primary current flows out when the MOSFET is on.
3. Source (S): The terminal through which the current enters the MOSFET.
The pin configuration is typically as follows (when viewing the MOSFET from the top, with the pins facing down):
1. Gate
2. Drain
3. Source
4. Drain
5. Source
6. Gate
This component is commonly used in power management applications due to its low on-resistance and high-speed switching capabilities. The IPD30N03S2L-20 is suitable for various applications, including DC-DC converters, motor drivers, and power supplies.
Manufacturer
Application
1. DC-DC Converters: Used in switching regulators to improve efficiency.
2. Power Supplies: Employed in both AC-DC and DC-DC power supply circuits.
3. Motor Control: Utilized in brushless DC motor drivers and other motor control applications.
4. LED Drivers: Suitable for driving high-power LEDs.
5. Battery Management Systems: Utilized in charging and discharging circuits for batteries.
Its low on-resistance and high-speed switching capabilities make it ideal for these applications.