IPD320N20N3G

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IPD320N20N3G

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Thông số kỹ thuật

thuộc tính Giá trị
Manufacturer Infineon Technologies
Package TO-252-2
OperatingTemperature -55℃~+175℃
RDS(on) 32mΩ@10V,34A
DraintoSourceVoltage 200V
Pd-PowerDissipation 136W
Current-ContinuousDrain(Id) 34A
ReverseTransferCapacitance(Crss@Vds) 180pF@100V
GateThresholdVoltage(Vgs(th)@Id) 4V
GateCharge(Qg) 29nC@10V
Number 1 N-channel
InputCapacitance(Ciss) 2.35nF@100V

Tổng quan

Description

The IPD320N20N3G is a high-performance N-channel MOSFET designed for power applications. It features a low on-resistance (RDS(on)), enabling efficient power conversion and management. With a voltage rating of 200V and a continuous drain current of 320A, it is suitable for various applications, including industrial power supplies, motor drives, and renewable energy systems.
This MOSFET incorporates advanced technology for improved thermal performance, making it ideal for high-efficiency designs. Its fast switching capabilities reduce switching losses, enhancing overall system efficiency.
The package design facilitates efficient heat dissipation, which is critical in high-power applications. Additionally, the IPD320N20N3G is characterized by a low gate charge (Qg), allowing for faster switching speeds and lower drive requirements.
Overall, the IPD320N20N3G is an excellent choice for engineers seeking reliable, efficient, and powerful components in demanding electronic applications.

Equivalent

The IPD320N20N3G is a 20V N-channel MOSFET. Equivalent products include the IRF320, BSS123, and STP320N20. For specific applications, consider checking datasheets for parameter similarities such as R_DS(on), V_GS(th), and maximum current ratings to ensure compatibility. Always verify with the manufacturer or distributor for the most accurate cross-reference.

Features

The IPD320N20N3G is a high-performance N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 320A, providing robust performance in demanding environments.
3. Low R_DS(on): It offers a low on-resistance (R_DS(on)) of around 8.5 mΩ, which enhances efficiency by reducing power loss during operation.
4. Fast Switching: The MOSFET enables rapid switching, making it ideal for applications in power supplies, inverters, and motor drives.
5. Package Type: It comes in a TO-220 package, which provides good thermal management and ease of heat dissipation.
6. Thermal Resistance: The device features low thermal resistance, allowing for efficient heat management in high-power scenarios.
Overall, the IPD320N20N3G is suited for applications requiring high efficiency and reliability in power management.

Pinout

The IPD320N20N3G is an N-channel MOSFET manufactured by Infineon Technologies. It features a total of 6 pins. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET, allowing it to switch on or off.
2. Drain (D): The terminal through which the load current flows when the MOSFET is on.
3. Source (S): The terminal that connects to ground or the negative side of the circuit.
The device is optimized for high efficiency and performance in power applications, with a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 320A at a specified case temperature. It is commonly used in applications such as power supplies, motor drives, and other high-power switching applications.
For specific applications, it is essential to refer to the datasheet for detailed electrical characteristics and thermal performance.

Manufacturer

The IPD320N20N3G is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. Infineon serves various industries, such as automotive, industrial, and consumer electronics, focusing on applications that require energy efficiency, connectivity, and security. The IPD320N20N3G itself is an N-channel power MOSFET, primarily used in power management applications. Infineon is known for its commitment to innovation and sustainability, providing cutting-edge technology to help drive the transition to a more energy-efficient and connected world.

Application

The IPD320N20N3G is a high-performance N-channel MOSFET primarily used in various applications such as power management, motor control, and DC-DC converters. Its low on-resistance and high-speed switching capabilities make it suitable for automotive applications, including electric vehicle powertrains and battery management systems. Additionally, it is utilized in industrial automation, renewable energy systems, and consumer electronics for efficient power delivery and thermal management. Applications also extend to RF amplifiers and audio amplifiers, enhancing signal integrity and overall performance.

Package

The IPD320N20N3G is typically packaged in a TO-220 format. This package type allows for efficient heat dissipation and is commonly used in power applications, providing a robust solution for high-current and high-voltage environments.

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