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IPD70N10S3-12
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IPD70N10S3-12
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Bảng dữ liệu IPD70N10S3-12 DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Factory Pack Quantity | 2500 |
| Technology | Si |
| REACH - SVHC | Details |
| Mounting Type | SMD/SMT |
| Package / Case | DPAK-3 (TO-252-3) |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 100 V |
| Id - Continuous Drain Current | 70 A |
| Rds On | 11.1 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 51 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 125 W |
| Channel Mode | Enhancement |
| Tradename | OptiMOS |
| Configuration | Single |
| Fall Time | 8 ns |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Rise Time | 8 ns |
| Series | OptiMOS-T |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 25 ns |
| Typical Turn - On Delay Time | 17 ns |
| Width | 6.22 mm |
| Part # Aliases | SP000427248 IPD7N1S312XT IPD70N10S312ATMA1 |
| Unit Weight | 0.139332 oz |
| Qualification | AEC-Q100 |
Tổng quan
Description
The IPD70N10S3-12 is a high-performance N-channel MOSFET designed for various applications, including power management and switching. It features a maximum drain-to-source voltage (VDS) of 100V and a continuous drain current (ID) of 70A, making it suitable for high-voltage and high-current applications. The device is optimized for low on-resistance (RDS(on)), which enhances its efficiency and reduces heat generation during operation.
With a gate threshold voltage (VGS(th)) of 2-4V, the IPD70N10S3-12 can be driven with standard logic-level signals. Its fast switching capabilities enable it to handle rapid transitions, making it ideal for applications like DC-DC converters and motor control.
The MOSFET is packaged in a TO-220 format, which facilitates heat dissipation and allows for easy mounting on heat sinks. Overall, the IPD70N10S3-12 is a reliable choice for engineers seeking efficient and compact solutions in power electronics.
With a gate threshold voltage (VGS(th)) of 2-4V, the IPD70N10S3-12 can be driven with standard logic-level signals. Its fast switching capabilities enable it to handle rapid transitions, making it ideal for applications like DC-DC converters and motor control.
The MOSFET is packaged in a TO-220 format, which facilitates heat dissipation and allows for easy mounting on heat sinks. Overall, the IPD70N10S3-12 is a reliable choice for engineers seeking efficient and compact solutions in power electronics.
Equivalent
The IPD70N10S3-12 is an N-channel MOSFET. Equivalent products include the IRF740, IRF3205, and STP75NF10. Ensure to check specifications such as voltage rating, current rating, RDS(on), and package type for compatibility in your specific application.
Features
The IPD70N10S3-12 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: 100V, suitable for high-voltage applications.
2. Current Rating: Can handle continuous drain currents up to 70A, depending on thermal management.
3. RDS(on): Low on-resistance (~12 mΩ at VGS = 10V), ensuring efficient power conduction and reduced heat generation.
4. Fast Switching: Optimized for fast switching applications, making it ideal for use in power supplies and motor drives.
5. Package: Available in an advanced TO-247 package, which enhances thermal performance.
6. Gate Charge: Low gate charge (Qg) minimizes drive losses, improving overall efficiency.
7. Thermal Resistance: Low thermal resistance allows for better heat dissipation.
These features make the IPD70N10S3-12 suitable for various applications in power management, automotive, and industrial systems.
1. Voltage Rating: 100V, suitable for high-voltage applications.
2. Current Rating: Can handle continuous drain currents up to 70A, depending on thermal management.
3. RDS(on): Low on-resistance (~12 mΩ at VGS = 10V), ensuring efficient power conduction and reduced heat generation.
4. Fast Switching: Optimized for fast switching applications, making it ideal for use in power supplies and motor drives.
5. Package: Available in an advanced TO-247 package, which enhances thermal performance.
6. Gate Charge: Low gate charge (Qg) minimizes drive losses, improving overall efficiency.
7. Thermal Resistance: Low thermal resistance allows for better heat dissipation.
These features make the IPD70N10S3-12 suitable for various applications in power management, automotive, and industrial systems.
Pinout
The IPD70N10S3-12 is an N-channel MOSFET from Infineon Technologies with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET, allowing it to turn on or off based on the voltage applied to it.
2. Drain (D): The drain pin is where the main current flows into the MOSFET from the load.
3. Source (S): The source pin is where the current exits the MOSFET, returning to ground or the negative side of the power supply.
This device is designed for applications such as power management and switch-mode power supplies, featuring low on-resistance and high current handling capabilities.
1. Gate (G): This pin is used to control the MOSFET, allowing it to turn on or off based on the voltage applied to it.
2. Drain (D): The drain pin is where the main current flows into the MOSFET from the load.
3. Source (S): The source pin is where the current exits the MOSFET, returning to ground or the negative side of the power supply.
This device is designed for applications such as power management and switch-mode power supplies, featuring low on-resistance and high current handling capabilities.
Manufacturer
The IPD70N10S3-12 is manufactured by Infineon Technologies. Infineon is a leading global semiconductor manufacturer headquartered in Munich, Germany. The company specializes in providing a wide range of electronic components, including power semiconductors, microcontrollers, and sensors, catering to various applications in automotive, industrial, and consumer electronics markets. Infineon focuses on developing innovative technologies that enhance energy efficiency, connectivity, and security, making it a key player in the semiconductor industry. The IPD70N10S3-12 is a specific type of N-channel MOSFET designed for high-performance power applications, demonstrating Infineon's commitment to high-quality and efficient electronic solutions.
Application
The IPD70N10S3-12 is a high-performance N-channel MOSFET used primarily in power management applications. Its key application areas include:
1. Switching Power Supplies: Efficiently managing power conversion in various electronic devices.
2. Motor Drivers: Controlling motors in industrial and consumer applications.
3. DC-DC Converters: Enhancing efficiency in voltage regulation circuits.
4. LED Drivers: Regulating current for LED lighting systems.
5. Class D Audio Amplifiers: Improving audio output efficiency.
6. Battery Management Systems: Protecting and optimizing battery operation in electric vehicles and portable electronics.
Its low on-resistance and high-speed switching capabilities make it suitable for these applications.
1. Switching Power Supplies: Efficiently managing power conversion in various electronic devices.
2. Motor Drivers: Controlling motors in industrial and consumer applications.
3. DC-DC Converters: Enhancing efficiency in voltage regulation circuits.
4. LED Drivers: Regulating current for LED lighting systems.
5. Class D Audio Amplifiers: Improving audio output efficiency.
6. Battery Management Systems: Protecting and optimizing battery operation in electric vehicles and portable electronics.
Its low on-resistance and high-speed switching capabilities make it suitable for these applications.
Package
The IPD70N10S3-12 is typically packaged in a TO-220 form factor. This package type is known for its good thermal performance and is commonly used for power MOSFETs, providing ease of heat dissipation and mounting.
