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IPN50R950CE
+BOMCOOLMOS N-CHANNEL POWER MOSFET
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IPN50R950CE
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Bảng dữ liệu IPN50R950CE DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Part Status | Active |
Tổng quan
Description
Key features of the IPN50R950CE include a breakdown voltage of 550V, a low on-resistance, and fast switching capabilities. These characteristics enable the device to handle high voltages while minimizing energy loss, contributing to overall system efficiency. The MOSFET is constructed with advanced silicon technology to ensure reliability and performance in demanding environments.
The IPN50R950CE is available in a TO-220 FullPAK package, which provides enhanced thermal performance and ease of mounting. This component is well-suited for engineers and designers looking to optimize power efficiency in electronic circuits, particularly in cost-sensitive consumer electronics where energy efficiency is crucial.
Equivalent
1. STP50N50 - STMicroelectronics
2. FDPF50N50 - ON Semiconductor
3. IRFP450 - Vishay
4. FQA50N50 - Fairchild Semiconductor
Ensure to verify electrical characteristics like voltage, current, Rds(on), and package type when choosing an equivalent to ensure compatibility with your application.
Features
1. Voltage Rating: The MOSFET has a voltage rating of 500V, suitable for applications that require high voltage tolerance.
2. RDS(on): It offers a low on-resistance (RDS(on)) of 0.95 ohms, which reduces conduction losses and increases efficiency.
3. Current Capacity: Designed to handle a continuous current, making it suitable for various power applications.
4. Package: Typically available in a TO-220 package for effective heat dissipation and ease of mounting.
5. Temperature Rating: Can operate over a wide temperature range, which enhances its reliability in different environments.
6. Applications: Ideal for use in power supplies, adapters, and lighting applications due to its efficiency and high voltage handling capabilities.
7. Technology: Part of the CoolMOS series, known for its energy efficiency and low switching losses.
These features make the IPN50R950CE a versatile choice for developers looking to enhance the efficiency and reliability of their power electronic designs.
Pinout
1. Gate (G): This pin is used to control the MOSFET's switching operation by applying a voltage to it.
2. Drain (D): This pin is the output of the MOSFET, through which the main current flows when the device is turned on.
3. Source (S): This pin is connected to the ground or the reference voltage of the circuit.
Overall, the IPN50R950CE is designed for efficient power conversion applications, providing benefits like low conduction and switching losses, which are crucial for enhancing the performance and efficiency of power supply units and various other electronic devices.
Manufacturer
Application
1. Switching Power Supplies: Used in both AC-DC and DC-DC converters for efficient power conversion.
2. Motor Drives: Suitable for driving motors in industrial and consumer applications due to its high-speed switching capabilities.
3. Inverters: Employed in solar inverters and uninterruptible power supplies (UPS) for efficient power management.
4. Lighting Systems: Used in LED drivers and other advanced lighting solutions.
5. PFC Circuits: Serves as a key component in power factor correction circuits to improve power quality.
These applications benefit from its low on-state resistance and high energy efficiency.