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IPP023N10N5AKSA1
+BOMMOSFET N-CH 100V 120A TO220-3
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IPP023N10N5AKSA1
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Có sẵn2583
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | Infineon Technologies |
| Package / Case | Tube |
| Series | OptiMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 120A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 2.3mOhm @ 100A, 10V |
| Vgs(th)(Max) @ Id | 3.8V @ 270µA |
| Gate Charge(Qg)(Max) @ Vgs | 210 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 15600 pF @ 50 V |
| Power Dissipation (Max) | 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3 |
Tổng quan
Description
Exact part IPP023N10N5AKSA1 isn’t widely published in public catalogs, so a precise introduction depends on the manufacturer’s datasheet. It appears to be a high-power switching device (likely a N‑channel MOSFET or IGBT) used in power electronics.
General introduction if it is a power MOSFET/IGBT:
- Purpose: fast switching of high currents in applications such as DC–DC converters, motor drives, inverters, and automotive power stages.
- Key features (typical): high voltage rating (Vds), high current rating (Id), low on‑resistance (Rds(on)) for MOSFETs or high gain for IGBTs, fast switching, integrated body diode (MOSFET) or controlled switching behavior (IGBT), suitable packaging for heatsinking.
- Common specs to check: Vds, Id, Rds(on) or Vce(on), Qgs/Qgd (gate charge), Qgs(th), switching speed, SOA, thermal resistance, package type.
- How to verify: locate the exact manufacturer datasheet using the full PN, confirm package, electrical ratings, safe operating area, and thermal data; review application notes for gate drive requirements and protection features.
If you can share the manufacturer or a datasheet link, I can give a precise intro.
General introduction if it is a power MOSFET/IGBT:
- Purpose: fast switching of high currents in applications such as DC–DC converters, motor drives, inverters, and automotive power stages.
- Key features (typical): high voltage rating (Vds), high current rating (Id), low on‑resistance (Rds(on)) for MOSFETs or high gain for IGBTs, fast switching, integrated body diode (MOSFET) or controlled switching behavior (IGBT), suitable packaging for heatsinking.
- Common specs to check: Vds, Id, Rds(on) or Vce(on), Qgs/Qgd (gate charge), Qgs(th), switching speed, SOA, thermal resistance, package type.
- How to verify: locate the exact manufacturer datasheet using the full PN, confirm package, electrical ratings, safe operating area, and thermal data; review application notes for gate drive requirements and protection features.
If you can share the manufacturer or a datasheet link, I can give a precise intro.
Pinout
Pin count: 9 pins.
Function: Infineon IPP device containing two N-channel MOSFETs configured as a half-bridge (high-side and low-side) in an Intelligent Power Package. Used for motor drive/switching applications with integrated protection features. For exact pinout, consult the datasheet, as package variants may differ.
Function: Infineon IPP device containing two N-channel MOSFETs configured as a half-bridge (high-side and low-side) in an Intelligent Power Package. Used for motor drive/switching applications with integrated protection features. For exact pinout, consult the datasheet, as package variants may differ.
Manufacturer
Manufacturer: Infineon Technologies AG.
What kind of company: A German multinational semiconductor manufacturer that designs and produces power semiconductors (IGBTs, MOSFETs, diodes), integrated circuits, and related modules for automotive, industrial, and security applications.
What kind of company: A German multinational semiconductor manufacturer that designs and produces power semiconductors (IGBTs, MOSFETs, diodes), integrated circuits, and related modules for automotive, industrial, and security applications.
Application
IPP023N10N5AKSA1 is an N-channel power MOSFET used as a high-speed switch in power electronics. Common application areas include:
- Switch‑mode power supplies (PFC, buck/boost, LLC) and DC‑DC converters
- Motor control and variable-speed drives (BLDC/PMSM)
- Renewable-energy interfaces (PV inverters, battery storage, microgrids)
- Uninterruptible power supplies (UPS) and power conditioning
- DC‑AC inverters and AC‑DC bridge circuits
- General high-efficiency switching in industrial, telecom, automotive, and consumer electronics
- Switch‑mode power supplies (PFC, buck/boost, LLC) and DC‑DC converters
- Motor control and variable-speed drives (BLDC/PMSM)
- Renewable-energy interfaces (PV inverters, battery storage, microgrids)
- Uninterruptible power supplies (UPS) and power conditioning
- DC‑AC inverters and AC‑DC bridge circuits
- General high-efficiency switching in industrial, telecom, automotive, and consumer electronics
