IPP029N06N

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IPP029N06N

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Thông số kỹ thuật

thuộc tính Giá trị
Technology Si
Packaging Tube
Brand Infineon Technologies
Product Type MOSFETs
Series OptiMOS 5
Factory Pack Quantity 500
Subcategory Transistors
Part # Aliases SP000917404 IPP29N6NXK IPP029N06NAKSA1
Mounting Type Through Hole
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Height 15.65 mm
Length 10 mm
Width 4.4 mm
Unit Weight 0.068784 oz
Package / Case TO-220-3
Configuration Single
Tradename OptiMOS
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain - Source Breakdown Voltage 60 V
Id - Continuous Drain Current 100 A
Rds On 2.7 mOhms
Vgs - Gate - Source Voltage - 20 V, + 20 V
Vgs th - Gate - Source Threshold Voltage 2.1 V
Qg - Gate Charge 66 nC
Pd - Power Dissipation 136 W
Channel Mode Enhancement
Fall Time 8 ns
Rise Time 15 ns
Transistor Type 1 N-Channel
Typical Turn - Off Delay Time 30 ns
Typical Turn - On Delay Time 17 ns
Forward Transconductance - Min 80 S

Tổng quan

Description

IPP029N06N is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It typically features a low RDS(on) specification, which minimizes power losses during operation, making it suitable for various applications such as power supplies, motor drivers, and DC-DC converters.
Key specifications often include maximum drain-source voltage (VDS), gate threshold voltage (VGS(th)), and continuous drain current (ID), allowing it to handle significant power loads. The "N" designation typically indicates that it is an N-channel MOSFET, known for better electron mobility compared to P-channel types, resulting in faster switching times and improved performance in high-frequency applications.
When selecting an IPP029N06N for a project, consider parameters like thermal resistance, package type, and gate drive requirements. Proper design integration ensures optimal performance and reliability in electronic circuits. Always check the manufacturer's datasheet for detailed electrical characteristics and recommended operating conditions.

Equivalent

The IPP029N06N is an N-channel MOSFET. Equivalent products include the IRF2807, STP29NF06, and AON7403. Check specific parameters like RDS(on), VDS, and current ratings to ensure compatibility for your application.

Features

The IPP029N06N is a N-channel MOSFET from Infineon, designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 60V, making it suitable for medium-voltage applications.
2. Continuous Drain Current: The MOSFET can handle a maximum continuous drain current of 29A, allowing it to manage significant power loads.
3. Low On-Resistance: With an RDS(on) of around 29 mΩ at a gate-source voltage (VGS) of 10V, it offers low conduction losses, enhancing efficiency.
4. Fast Switching Speed: The device supports high-speed switching, making it ideal for applications like DC-DC converters and motor drivers.
5. Thermal Performance: It features a robust package design for effective heat dissipation, ensuring reliability under high-load conditions.
6. Gate Charge: A low total gate charge (Qg) helps in minimizing drive losses during operation.
These attributes make the IPP029N06N suitable for various applications in power management and automotive sectors.

Pinout

The IPP029N06N is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) with a total of 6 pins. Its primary functions include switching and amplification in various electronic applications, such as power management and motor control.
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET on/off state.
2. Drain (D): The terminal through which the current flows out when the device is on.
3. Source (S): The terminal through which the current enters when the device is on.
The specific features of the IPP029N06N include a low R_DS(on) for efficient conduction and a high voltage rating, making it suitable for high-performance applications. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.

Manufacturer

The IPP029N06N is manufactured by Infineon Technologies, a global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in semiconductor and system solutions that cater to automotive, industrial, and multimarket applications.
The company is a key player in the semiconductor industry, focusing on areas such as power management, sensor solutions, and security technologies. Infineon is known for its innovation in power semiconductor devices, including MOSFETs, IGBTs, and other components used in a wide range of electronic applications, from automotive powertrains to renewable energy systems.
The IPP029N06N is a N-channel MOSFET, commonly used for power switching applications due to its high efficiency and reliability. Infineon emphasizes sustainability and energy efficiency in its products, aligning with global trends toward greener technologies.

Application

The IPP029N06N is a N-channel MOSFET primarily used in power management applications. Its typical application areas include:
1. DC-DC Converters: Used in switching power supplies for efficient voltage regulation.
2. Motor Control: Suitable for driving motors in various automation and robotics applications.
3. Power Management Circuits: Employed in battery management systems and power distribution.
4. LED Drivers: For efficient control and dimming of LED lighting systems.
5. Consumer Electronics: Utilized in devices requiring high-efficiency power switching.
Its low on-resistance and high-speed switching capabilities make it ideal for these applications.

Package

The IPP029N06N is typically available in a TO-220 package type, which is a metal tabbed package that facilitates heat dissipation, making it suitable for power applications.

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