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IPP65R380E6
+BOMIPP65R380E6 - 650V-700V COOLMOS
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IPP65R380E6
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Bảng dữ liệu IPP65R380E6 DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Part Status | Active |
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Description
Key characteristics of the IPP65R380E6 include low on-resistance, which minimizes power losses, and a fast switching capability that enhances overall efficiency. It is typically used in power supply systems, including server power supplies, telecom rectifiers, and solar inverters, where efficiency and thermal performance are critical.
The device is housed in a TO-220 package, providing a balance between performance and cost-effectiveness. Its high power density and reliability make it a popular choice for designers looking to optimize their power electronics systems. Overall, the IPP65R380E6 offers a robust solution for modern energy-efficient designs.
Equivalent
1. STMicroelectronics STP65NF06
2. ON Semiconductor FDPF12N50
3. NXP Semiconductors PSMN7R0-60YS
4. Vishay SiHH6N60E
5. Fairchild (now ON Semiconductor) FQA11N90
Ensure you compare specifications like voltage, current, and package before substituting to match your application requirements.
Features
1. Voltage Rating: It has a breakdown voltage of 650V, making it suitable for high-voltage applications.
2. RDS(on): The device offers a low on-state resistance, typically around 0.38 ohms, which ensures efficient conduction and minimizes power losses.
3. Technology: Part of the CoolMOS E6 series, it utilizes advanced superjunction technology to offer higher efficiency and improved thermal performance.
4. Current Capability: The device can handle a continuous drain current, contributing to its robustness in various applications.
5. Package: Typically available in a TO-220 package, which provides a good balance between thermal performance and cost.
6. Applications: Ideal for use in high-efficiency power supply applications, such as server, telecom, and industrial power supplies.
These features collectively make the IPP65R380E6 suitable for high-efficiency and high-frequency switching applications.
Pinout
1. Gate (G) - This pin is responsible for turning the MOSFET on or off. It controls the flow of current between the drain and source.
2. Drain (D) - This is where the main current flows out of the MOSFET. It is the output side of the device.
3. Source (S) - This is the terminal through which the current enters the MOSFET.
The IPP65R380E6 is designed for high efficiency and high power density applications, offering low conduction and switching losses. It is commonly used in power supplies, lighting, and industrial applications.