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IPT007N06NATMA1
+BOMMOSFET N-CH 60V 300A 8HSOF
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IPT007N06NATMA1
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Bảng dữ liệu IPT007N06NATMA1 DataSheet
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Có sẵn1203
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Series | OptiMOS™ |
| Part Status | Active |
| Base Product Number | IPT007 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 300A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 0.75mOhm @ 150A, 10V |
| Vgs(th) (Max) @ Id | 3.3V @ 280µA |
| Gate Charge (Qg) (Max) @ Vgs | 287 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 16000 pF @ 30 V |
| Power Dissipation (Max) | 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HSOF-8-1 |
| Package | 8-PowerSFN |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Tổng quan
Equivalent
- IPB007N06NATMA1 (Same specs, different package)
- IPP60R070P6XKSA1 (Infineon, 60V, 7mΩ)
- STL160N6F7 (STMicroelectronics, 60V, 6.5mΩ)
- BSC060N06NS (Infineon, 60V, 6mΩ)
Check datasheets for exact compatibility.
Features
- Low RDS(on): 7mΩ (max) at VGS=10V, reducing conduction losses.
- High Current Handling: Up to 180A (pulsed) for robust performance.
- Fast Switching: Optimized for high-frequency applications (e.g., DC-DC converters, motor drives).
- Low Gate Charge (Qg): Enhances switching efficiency.
- AEC-Q101 Qualified: Suitable for automotive applications.
- Thermal Performance: Low thermal resistance (RthJC ≈ 0.5°C/W) for better heat dissipation.
- Package: TO-Leadless (TOLL), compact and optimized for PCB space savings.
Ideal for 48V systems, server power supplies, and industrial inverters.
Manufacturer
The part is part of Infineon's OptiMOS™ series, designed for efficiency in power conversion.