Hình ảnh chỉ để tham khảo
IPW60R099C6
+BOMMOSFETs N-Ch 650V 38A TO247-3 CoolMOS C6
-
Nhà sản xuấtCông nghệ Infineon
-
Ông. Phần #IPW60R099C6
-
Bảng dữ liệu IPW60R099C6 DataSheet
-
Có sẵn16187
365 Đảm bảo chất lượng ngày
7*24 giờ dịch vụ quarantee
90-Bảo hành sau bán hàng ngày
Bảo hành sản phẩm chính xác
Thông số kỹ thuật
| thuộc tính | Giá trị |
| Packaging | Tube |
| StandardPackQty | 240 |
Tổng quan
Description
Key features of the IPW60R099C6 include a maximum drain-source voltage (V_ds) of 600V and a low on-state resistance (R_ds(on)) of 0.099 ohms, which helps to minimize power dissipation and enhance efficiency. It can handle high-speed switching and offers excellent thermal performance due to its low thermal resistance and robust package design. The device is typically offered in a TO-247 package, which provides good heat dissipation.
The CoolMOS™ technology used in the IPW60R099C6 enhances the overall performance by reducing gate charge and improving the switching speed, which translates to lower operational costs and improved energy efficiency in power electronics applications.
Equivalent
1. STMicroelectronics STP65NF06
2. Fairchild Semiconductor (now ON Semiconductor) FDPF18N50T
3. Vishay's IRF540N
Ensure to compare the key parameters like voltage, current rating, Rds(on), and package type to ensure compatibility. Always consult datasheets for precise matching.
Features
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 54.1A, making it suitable for high-voltage applications.
2. R_DS(on): It offers a low on-state resistance of 0.099 ohms, enhancing efficiency by reducing power losses.
3. Technology: Part of the CoolMOS™ C6 series, it leverages superjunction technology to optimize performance, supporting high-speed switching and improved thermal behavior.
4. Efficiency: The low switching losses and minimized gate charge contribute to high efficiency, suitable for power supplies and converters.
5. Package: It is available in a TO-247 package, providing good thermal performance and ease of integration into various designs.
6. Applications: Commonly used in applications such as power factor correction, photovoltaic inverters, and industrial power supplies.
These features make the IPW60R099C6 an appealing choice for designers focusing on efficiency and reliability in power management systems.
Pinout
1. Gate (G): This is the control terminal that modulates the conductivity of the MOSFET. Applying a voltage to this pin turns the MOSFET on or off.
2. Drain (D): This is the terminal where the load is connected. The current flows from the drain to the source when the MOSFET is in the 'on' state.
3. Source (S): This is the terminal that is typically connected to the ground or return path in a circuit.
The IPW60R099C6 is designed for high-voltage applications and offers features like low on-state resistance, fast switching speed, and high-efficiency performance. It is used in applications such as switch-mode power supplies, power factor correction, and other power conversion systems.
Manufacturer
Application
1. Switch Mode Power Supplies (SMPS): Enhances efficiency and performance in AC-DC and DC-DC converters.
2. Telecommunications: Powers infrastructure equipment by providing reliable and efficient power management.
3. Solar Inverters: Implements efficient energy conversion in photovoltaic systems.
4. Motor Drives: Used in industrial and automotive applications for efficient motor control.
5. Uninterruptible Power Supplies (UPS): Provides reliable power backup by managing power efficiently.
These application areas leverage the MOSFET's low conduction and switching losses, high-speed switching capability, and reliability.