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IPW65R048CFDA
+BOMMOSFETs N-Ch 650V 63.3A TO247-3
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Ông. Phần #IPW65R048CFDA
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Bảng dữ liệu IPW65R048CFDA DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Packaging | Tube |
| Standard Pack Qty | 240 |
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Description
The device features a low on-state resistance (R_DS(on)) of 0.048 ohms, which minimizes power losses and enhances overall system efficiency. Additionally, the IPW65R048CFDA includes a fast-recovery body diode, reducing reverse recovery charge and improving switching performance at high frequencies. This MOSFET is optimized for hard-switching topologies, making it a preferred choice for designs requiring high power density and robust thermal performance.
With its advanced technology and robust performance, the IPW65R048CFDA provides designers with a reliable solution for achieving energy-efficient power management in a wide range of applications.
Equivalent
1. STMicroelectronics: STW65N65DM2AG
2. ON Semiconductor: NDFP021N65MC
3. Vishay: SiHP48N65E
4. Fairchild (now part of ON Semiconductor): FDP065N65
Ensure to verify electrical characteristics and package compatibility when choosing equivalents, as specifications may vary slightly between manufacturers.
Features
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Capacity: The device can handle a continuous drain current (I_D) of up to 48A, depending on operating conditions.
3. R_DS(on): It has a low on-state resistance, typically around 0.048Ω, which helps reduce conduction losses.
4. Fast Switching: The device features fast switching capabilities, improving efficiency in power conversion applications.
5. Body Diode: Equipped with a fast-recovery body diode, it ensures better performance in hard-switching applications.
6. Efficiency: The MOSFET is optimized for low switching losses, contributing to overall system efficiency.
7. Package: It is available in a TO-247 package, which offers good thermal performance for power devices.
These features make the IPW65R048CFDA suitable for applications such as power supplies, DC-DC converters, and other high-efficiency power management systems.
Pinout
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to this pin, the device is switched on or off.
2. Drain (D): This pin is connected to the main power line. When the MOSFET is turned on, current flows from the drain to the source.
3. Source (S): This pin is connected to the ground or load. It serves as the return path for the current flowing through the MOSFET.
The IPW65R048CFDA is designed for high-efficiency power conversion applications, including use in power supplies and other power management systems. It features low on-state resistance and high-speed switching capabilities, making it suitable for high-frequency applications.
Manufacturer
Application
1. Switch Mode Power Supplies (SMPS): Used in both industrial and consumer electronics for efficient power conversion.
2. Server and Telecom Power Systems: Provides reliable power management for data centers and communication systems.
3. Solar Inverters: Enhances the efficiency of photovoltaic systems by optimizing power conversion.
4. Electric Vehicle Charging: Supports efficient power delivery in EV charging stations.
5. Motor Drives: Used in industrial and appliance motor control for improved energy efficiency.
These application areas benefit from the MOSFET's low on-resistance and fast switching capabilities.