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IR21271
+BOMIC GATE DRV HI-SIDE/LO-SIDE 8DIP
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IR21271
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Bảng dữ liệu IR21271 DataSheet
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Gói DIP-8
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Có sẵn4271
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tube |
| Part Status | Obsolete |
| Driven Configuration | High-Side or Low-Side |
| Channel Type | Single |
| Number of Drivers | 1 |
| Gate Type | IGBT, N-Channel MOSFET |
| Voltage - Supply | 9V ~ 20V |
| Logic Voltage - VILVIH | 0.8V, 3V |
| Current - Peak Output(Source Sink) | 250mA, 500mA |
| Input Type | Non-Inverting |
| High Side Voltage - Max(Bootstrap) | 600 V |
| Rise / Fall Time(Typ) | 80ns, 40ns |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
Tổng quan
Description
- Goals and scope of IR; core concepts
- Theoretical frameworks: realism, liberalism, constructivism
- Key actors: states, IGOs, NGOs, MNCs
- Core topics: war/peace, diplomacy, international law, trade/economics, human rights, globalization, environment
- International organizations and regimes; diplomacy and negotiation
- Research methods: basic IR methods, case studies
- Assessments: exams, essays, presentations, group work
Prerequisites vary; often no strict prerequisites or at most an introductory social sciences background. If IR21271 refers to a different program or institution, please share the context for a precise syllabus.
Equivalent
Features
- Two independent outputs: HO (high‑side) and LO (low‑side)
- Floating high‑side drive via bootstrap supply (VB–VS)
- TTL/CMOS‑friendly inputs; logic supply from Vcc
- Undervoltage lockout (UVLO) on both channels with hysteresis
- Shoot‑through protection and programmable deadtime
- Fast gate drive with high peak source/sink current
- Fault/diagnostic reporting and protection features
- External bootstrap capacitor required for VB–VS
- Available in common packages (e.g., SOIC/DIP)
Note: exact voltage ratings and current specs depend on the specific variant; consult the datasheet for your part number for precise limits.
Pinout
- Function: High-voltage, high-speed dual gate driver for a half-bridge (drives N-channel MOSFETs/IGBTs). Provides independent high-side (HO) and low-side (LO) outputs, uses a bootstrap VB–VS supply for the high-side, inputs HIN/LIN, and includes UVLO/SD protection.
Manufacturer
- What kind of company: A semiconductor company specializing in power management and power electronics, producing devices such as MOSFETs, IGBTs, and gate-driver ICs.
Application
Typical application areas:
- Gate drive for two-MOSFET bridges in SMPS (DC-DC, AC-DC, isolated)
- Motor drives (BLDC/PMSM, stepper) and inverters
- Solar inverters, UPS, and other industrial/power electronics
- Automotive power electronics
