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IR2183S
+BOMIC GATE DRVR HALF-BRIDGE 8SOIC
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IR2183S
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Bảng dữ liệu IR2183S DataSheet
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Gói SOIC-8
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Có sẵn3030
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package | Tube |
| ProductStatus | Obsolete |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | IGBT, N-Channel MOSFET |
| Voltage-Supply | 10V ~ 20V |
| LogicVoltage-VILVIH | 0.8V, 2.7V |
| Current-PeakOutput(SourceSink) | 1.9A, 2.3A |
| InputType | Inverting, Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 600 V |
| Rise/FallTime(Typ) | 40ns, 20ns |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Tổng quan
Description
Students can expect to explore topics such as world politics, diplomacy, global institutions, state behavior, and transnational issues like security, trade, and human rights. The course might also introduce different theoretical approaches, including realism, liberalism, constructivism, and critical theories, providing tools to analyze and understand global interactions.
The course may involve a combination of lectures, discussions, and readings, aimed at developing students' analytical and critical thinking skills. Assessments could include essays, exams, and presentations to evaluate understanding and engagement with the material. For specific details, such as prerequisites or course structure, one would need to refer to the syllabus or the department offering the course.
Equivalent
1. IRS2183SPBF
2. FAN7380
3. MIC4427
4. HIP2101
5. FAN73832
These alternatives can differ in specific performance characteristics, so it's important to review their datasheets to ensure compatibility with your application requirements.
Features
1. High Voltage Capability: It is designed for high-voltage applications, with a typical operating voltage range up to 600V.
2. Gate Drive Outputs: Provides separate high-side and low-side referenced output channels, enabling independent control of both high and low-side MOSFETs or IGBTs.
3. Under-Voltage Lockout (UVLO): Includes protection against under-voltage conditions to ensure reliable operation and prevent damage to the driven devices.
4. Shoot-Through Protection: Built-in dead-time control to prevent simultaneous conduction of the high-side and low-side switches, reducing the risk of shoot-through conditions.
5. Low Propagation Delay: Offers a fast response with a low propagation delay to facilitate high-frequency switching applications.
6. Floating Channel: The high-side driver is designed to operate with a floating channel, suitable for bootstrap operation.
7. Wide Supply Voltage Range: Compatible with a wide input voltage range for flexible power supply design.
These features make the IR2183S suitable for various applications, including motor drives, inverters, and power converters.
Pinout
1. VCC: Supply voltage for the logic circuitry.
2. IN: Logic input for controlling the high and low side outputs.
3. SD: Shutdown pin. Bringing this pin low turns off both the high and low side outputs.
4. COM: Common ground pin for the logic section.
5. VB: High-side floating supply voltage.
6. HO: High-side output for driving the gate of a high-side MOSFET or IGBT.
7. VS: High-side floating supply return, typically connected to the source of the high-side MOSFET.
8. LO: Low-side output for driving the gate of a low-side MOSFET or IGBT.
This configuration enables efficient driving of high-side and low-side power devices, providing level-shifting and protection features for robust operation in various applications.