Hình ảnh chỉ để tham khảo
IR2213S
+BOMIC GATE DRVR HALF-BRIDGE 16SOIC
-
Nhà sản xuấtCông nghệ Infineon
-
Ông. Phần #IR2213S
-
Bảng dữ liệu IR2213S DataSheet
-
Gói SOIC-16
-
Có sẵn6010
365 Đảm bảo chất lượng ngày
7*24 giờ dịch vụ quarantee
90-Bảo hành sau bán hàng ngày
Bảo hành sản phẩm chính xác
Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package | Tube |
| ProductStatus | Obsolete |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | IGBT, N-Channel MOSFET |
| Voltage-Supply | 12V ~ 20V |
| LogicVoltage-VILVIH | 6V, 9.5V |
| Current-PeakOutput(SourceSink) | 2A, 2.5A |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 1200 V |
| Rise/FallTime(Typ) | 25ns, 17ns |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 16-SOIC (0.295, 7.50mm Width) |
Tổng quan
Description
Students may also explore different theoretical perspectives such as realism, liberalism, and constructivism, which provide diverse lenses through which to understand international events and policies. The curriculum could involve case studies to illustrate concepts and might require essays, discussions, and examinations to assess understanding and critical thinking. By the end of the course, students are expected to gain a foundational understanding of how international relations shape the world and influence global issues such as security, trade, and human rights.
Equivalent
1. IRS2213S - Another variant from Infineon with similar specifications.
2. MIC4422 - A high-speed MOSFET driver from Microchip Technology.
3. UCC27322 - A Texas Instruments high-speed MOSFET and IGBT driver.
4. IXDD609 - A high-speed MOSFET driver from IXYS.
Always verify the specifications for compatibility with your application.
Features
1. High Voltage Capability: Operates with a high voltage level suitable for driving power devices.
2. High-Speed Operation: Offers fast switching to improve efficiency in power conversion applications.
3. Floating Channel Technology: Capable of driving high-side and low-side switches with independent references.
4. Dead-Time Control: Built-in functionality to prevent shoot-through by ensuring a safe delay between high-side and low-side switch activation.
5. Undervoltage Lockout (UVLO): Protects the system by preventing operation when supply voltage is too low.
6. Integrated Bootstrap Diode: Facilitates efficient high-side drive by simplifying the bootstrap circuit design.
7. Protection Features: Includes various protections like desaturation detection for IGBTs to enhance system reliability.
8. Compact Package: Available in a small, surface-mount package for easy integration into various applications.
These features make the IR2213S suitable for applications like motor drives, induction heating, and other industrial power management systems.
Pinout
The IR2213S comes in an SOIC-20 (Small Outline Integrated Circuit) package, which implies it has 20 pins. The key functions of the IR2213S include providing independent high-side and low-side gate drive, level shifting, and having a high voltage range to support various power applications. It typically features under-voltage lockout protection, dead-time control to prevent shoot-through, and desaturation detection for protection against over-current conditions.
The device is ideal for motor control, power supply, and inverter applications where robust and efficient high-voltage drive is required.