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IRF1010ZPBF
+BOMMOSFET N-CH 55V 75A TO220AB
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IRF1010ZPBF
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Bảng dữ liệu IRF1010ZPBF DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2840 pF @ 25 V |
| Power Dissipation (Max) | 140W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Base Product Number | IRF1010 |
Tổng quan
Description
The IRF1010ZPBF is a N-channel MOSFET designed for high-speed switching applications in power electronics. It features a low on-resistance (R_DS(on)), which minimizes power loss and improves efficiency in circuits. The device can handle a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 30A, making it suitable for a variety of applications, including power supplies, motor drivers, and DC-DC converters.
The IRF1010ZPBF is packaged in a TO-220 format, allowing for easy heat dissipation. Its gate threshold voltage (V_GS(th)) typically ranges between 2V to 4V, meaning it can be driven effectively with low-voltage logic levels. This MOSFET also offers fast switching speeds, which are essential for efficient operation in high-frequency applications.
Additionally, the "PBF" designation indicates that the component is lead-free, complying with RoHS standards for environmental safety. Overall, the IRF1010ZPBF is a reliable choice for engineers seeking efficient and effective power management solutions.
The IRF1010ZPBF is packaged in a TO-220 format, allowing for easy heat dissipation. Its gate threshold voltage (V_GS(th)) typically ranges between 2V to 4V, meaning it can be driven effectively with low-voltage logic levels. This MOSFET also offers fast switching speeds, which are essential for efficient operation in high-frequency applications.
Additionally, the "PBF" designation indicates that the component is lead-free, complying with RoHS standards for environmental safety. Overall, the IRF1010ZPBF is a reliable choice for engineers seeking efficient and effective power management solutions.
Equivalent
The IRF1010ZPBF is an N-channel MOSFET. Equivalent products include the STP16NF06, FQPF16N60, IRF1405, and the BUK9515-55E. When selecting an equivalent, ensure the voltage and current ratings, as well as R_DS(on) and gate threshold voltage, match your application requirements. Always consult the datasheets for detailed specifications.
Features
The IRF1010ZPBF is an N-channel MOSFET designed for power management applications. Key features include:
- Voltage Rating: 100V, suitable for high-voltage applications.
- Current Rating: Continuous drain current of up to 60A, allowing for handling significant load.
- RDS(on): Low on-resistance (typically around 0.08Ω at VGS=10V), which minimizes conduction losses.
- Gate Threshold Voltage (VGS(th)): Typically between 2-4V, making it easy to drive with standard logic levels.
- Package: Available in a TO-220 package for effective heat dissipation.
- Fast Switching Speed: Ideal for high-frequency applications, enhancing efficiency.
- Thermal Resistance: Excellent thermal performance due to low thermal resistance.
These features make the IRF1010ZPBF suitable for various applications, including power supplies, motor control, and automotive systems.
- Voltage Rating: 100V, suitable for high-voltage applications.
- Current Rating: Continuous drain current of up to 60A, allowing for handling significant load.
- RDS(on): Low on-resistance (typically around 0.08Ω at VGS=10V), which minimizes conduction losses.
- Gate Threshold Voltage (VGS(th)): Typically between 2-4V, making it easy to drive with standard logic levels.
- Package: Available in a TO-220 package for effective heat dissipation.
- Fast Switching Speed: Ideal for high-frequency applications, enhancing efficiency.
- Thermal Resistance: Excellent thermal performance due to low thermal resistance.
These features make the IRF1010ZPBF suitable for various applications, including power supplies, motor control, and automotive systems.
Pinout
The IRF1010ZPBF is an N-channel MOSFET with a total of 3 pins. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage greater than the threshold voltage turns the device on, allowing current to flow from the drain to the source.
2. Drain (D): This pin is where the load is connected. The current flows from the drain to the source when the MOSFET is in the on state.
3. Source (S): This pin is connected to the ground or negative side of the circuit. It serves as the return path for the current flowing through the MOSFET.
The IRF1010ZPBF is commonly used in switching applications and can handle significant voltage and current levels, making it suitable for various power management tasks in electronic circuits.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage greater than the threshold voltage turns the device on, allowing current to flow from the drain to the source.
2. Drain (D): This pin is where the load is connected. The current flows from the drain to the source when the MOSFET is in the on state.
3. Source (S): This pin is connected to the ground or negative side of the circuit. It serves as the return path for the current flowing through the MOSFET.
The IRF1010ZPBF is commonly used in switching applications and can handle significant voltage and current levels, making it suitable for various power management tasks in electronic circuits.
Manufacturer
The IRF1010ZPBF is manufactured by Infineon Technologies AG, a global semiconductor company headquartered in Germany. Infineon specializes in providing a broad range of semiconductor solutions, including power semiconductors, sensors, microcontrollers, and automotive ICs. They are known for their innovative technologies that support a variety of applications in areas such as automotive, industrial, and consumer electronics. Infineon is a key player in the power management sector, enhancing energy efficiency and reducing emissions in various electronic devices. Their products are widely used in applications that require reliable and efficient power conversion, making them a critical supplier for many industries.
Application
The IRF1010ZPBF is a N-channel MOSFET primarily used in various applications, including power management, motor control, and switching regulators. Its low RDS(on) and high speed make it suitable for high-efficiency DC-DC converters, power supplies, and inverters. Additionally, it is commonly employed in automotive applications for load switching, battery management systems, and signal amplification. The device is also utilized in industrial automation and control systems where reliable and efficient switching is required.
Package
The IRF1010ZPBF is packaged in a TO-220 type package. This package is designed for high-power applications, providing efficient thermal management and ease of mounting in various electronic circuits.
