IRF3205ZPBF

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IRF3205ZPBF

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MOSFET N-CH 55V 75A TO220AB

  • Nhà sản xuấtCông nghệ Infineon

  • Ông. Phần #IRF3205ZPBF

  • Gói TO-220AB

  • Có sẵn4786

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Thông số kỹ thuật

thuộc tính Giá trị
Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 55 V
Current-ContinuousDrain(Id)@25°C 75A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 6.5mOhm @ 66A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 110 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3450 pF @ 25 V
PowerDissipation(Max) 170W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Tổng quan

Description

The IRF3205ZPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. Manufactured by Infineon Technologies, this device is particularly useful in automotive, industrial, and consumer electronics applications. Key features include a low on-state resistance (R_DS(on)) of approximately 8 mΩ, which ensures high efficiency and minimal power loss. It can handle a continuous drain current of up to 98A and can withstand a maximum drain-source voltage (V_DS) of 55V.
The IRF3205ZPBF is housed in a TO-220 package, offering robust thermal performance and easy mounting. It is optimized for applications requiring fast switching speeds, such as DC-DC converters, motor drives, and power management systems. The MOSFET operates efficiently over a wide temperature range, making it suitable for various environmental conditions. Additionally, the "ZPBF" suffix indicates that it is lead-free and RoHS-compliant, aligning with global environmental standards. Overall, the IRF3205ZPBF is a versatile component known for its reliability and efficiency in high-power applications.

Equivalent

Equivalent products to the IRF3205ZPBF, which is a N-channel MOSFET, include:
1. STP55NF06
2. IRFZ44N
3. FDP8870
4. IRLZ44N
5. 2SK2837
These alternatives generally share similar specifications like voltage, current ratings, and package type, making them suitable substitutes in many applications. Always verify the exact specifications and pin configurations to ensure compatibility with your specific circuit requirements.

Features

The IRF3205ZPBF is a power MOSFET designed for high-efficiency power management applications. Key features include:
1. N-Channel MOSFET: Operates as an n-channel enhancement-mode device.
2. Voltage and Current Ratings: It supports a maximum continuous drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) of 110A at 25°C.
3. Low On-Resistance: Offers low R_DS(on) values, typically around 8 mΩ, which minimizes conduction losses.
4. Fast Switching: Designed for rapid switching with low gate charge, enhancing efficiency in high-frequency applications.
5. Thermal Resistance: Features a low thermal resistance from junction to case, improving heat dissipation.
6. Package Type: Available in a TO-220 package, which provides robust mechanical support and effective thermal management.
7. Lead-Free: The "PBF" suffix indicates that this MOSFET is lead-free and RoHS compliant, aligning with environmental standards.
This combination of features makes the IRF3205ZPBF suitable for applications like DC-DC converters, motor controls, and synchronous rectification.

Pinout

The IRF3205ZPBF is a HEXFET power MOSFET commonly used for switching applications due to its high efficiency. It typically comes in a TO-220 package which has 3 pins. The pin configuration for the IRF3205ZPBF is as follows:
1. Gate (G): This pin is responsible for turning the MOSFET on or off. A voltage applied to the gate controls the current flow between the drain and the source.
2. Drain (D): The drain is the terminal through which the current exits the MOSFET when it is in the "on" state.
3. Source (S): This is the terminal through which the current enters the MOSFET.
This MOSFET is known for its low on-resistance and high current handling capability, making it suitable for high-power applications like motor controllers, power supplies, and automotive applications. Its maximum drain-source voltage (Vds) is 55V, and it can handle continuous drain current up to approximately 110A under specified conditions.

Manufacturer

The IRF3205ZPBF is manufactured by Infineon Technologies. Infineon is a leading global semiconductor company that designs, develops, manufactures, and markets a broad range of semiconductor products. The company is known for its innovations in automotive, industrial power control, power management, digital security solutions, and other applications. Infineon provides solutions that contribute to energy efficiency, mobility, and security in various electronic systems.

Application

The IRF3205ZPBF is a power MOSFET commonly used in applications requiring high efficiency and power handling. Its key application areas include:
1. Switching Power Supplies: Used in converters and inverters for efficient voltage regulation.
2. Motor Control: Suitable for controlling DC motors in automotive and industrial applications.
3. DC-DC Converters: Ideal for step-up or step-down voltage regulation in various electronic devices.
4. Battery Management: Employed in battery protection circuits and charging systems.
5. Load Switches: Used in electronic switches for connecting and disconnecting loads.
6. Lighting Systems: Essential in LED drivers and other lighting control applications.
These applications benefit from the MOSFET's low on-resistance and high-speed switching capabilities.

Package

The IRF3205ZPBF is a power MOSFET packaged in a TO-220AB format. TO-220 is a widely used package type for power semiconductors, providing efficient heat dissipation and easy mounting.

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