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IRF4905LPBF
+BOMMOSFET P-CH 55V 42A TO262
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IRF4905LPBF
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Bảng dữ liệu IRF4905LPBF DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | Infineon Technologies |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 55 V |
| Current-ContinuousDrain(Id)@25°C | 42A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 20mOhm @ 42A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 180 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 3500 pF @ 25 V |
| PowerDissipation(Max) | 170W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-262 |
Tổng quan
Description
The IRF4905LPBF is a P-channel power MOSFET designed for efficient power management in electronic devices. It is part of the HEXFET® series from Infineon Technologies and is known for its robustness and reliability in various applications. This MOSFET features a low on-resistance, which ensures minimal power loss and improves energy efficiency. The IRF4905LPBF is commonly used in applications such as load switching, motor control, and power conversion systems.
Key specifications include a maximum drain-source voltage (V_DS) of -55V and a continuous drain current (I_D) of up to -74A. It also has a low gate threshold voltage, which makes it suitable for use with lower voltage drive signals. The MOSFET is offered in a TO-220 package, providing good thermal performance and ease of mounting on PCBs.
Overall, the IRF4905LPBF is valued for its performance in switching applications where space, efficiency, and reliability are critical. Its durability and electrical characteristics make it an ideal choice for high-power, high-frequency applications.
Key specifications include a maximum drain-source voltage (V_DS) of -55V and a continuous drain current (I_D) of up to -74A. It also has a low gate threshold voltage, which makes it suitable for use with lower voltage drive signals. The MOSFET is offered in a TO-220 package, providing good thermal performance and ease of mounting on PCBs.
Overall, the IRF4905LPBF is valued for its performance in switching applications where space, efficiency, and reliability are critical. Its durability and electrical characteristics make it an ideal choice for high-power, high-frequency applications.
Equivalent
The IRF4905LPBF is a P-channel MOSFET. Equivalent products include the FQP27P06 from ON Semiconductor, the STP55PF06 from STMicroelectronics, and the Si4925DY from Vishay. These alternatives have similar voltage and current ratings, but it's essential to verify specific parameters like Rds(on) and package compatibility to ensure they meet your application requirements. Always consult datasheets for precise matching.
Features
The IRF4905LPBF is a P-channel MOSFET designed for various applications, featuring several key attributes:
1. Voltage and Current Ratings: It can handle a maximum drain-source voltage (V_ds) of -55V and a continuous drain current (I_d) of -74A at 25°C.
2. Low On-Resistance: The MOSFET exhibits a low on-state resistance (R_ds(on)) of approximately 0.02 ohms, ensuring efficient power conduction with minimal energy loss.
3. Thermal Performance: The device offers good thermal performance, supported by a maximum power dissipation of 200W.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_gs(th)) is typically -2 to -4V, facilitating easy interfacing with various control circuits.
5. Package Type: It is available in a TO-220 package, which aids in effective heat dissipation.
6. Applications: The IRF4905LPBF is commonly used in applications like DC-DC converters, power management systems, and motor drivers.
These features make the IRF4905LPBF a versatile choice for high-power and high-efficiency electronic designs.
1. Voltage and Current Ratings: It can handle a maximum drain-source voltage (V_ds) of -55V and a continuous drain current (I_d) of -74A at 25°C.
2. Low On-Resistance: The MOSFET exhibits a low on-state resistance (R_ds(on)) of approximately 0.02 ohms, ensuring efficient power conduction with minimal energy loss.
3. Thermal Performance: The device offers good thermal performance, supported by a maximum power dissipation of 200W.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_gs(th)) is typically -2 to -4V, facilitating easy interfacing with various control circuits.
5. Package Type: It is available in a TO-220 package, which aids in effective heat dissipation.
6. Applications: The IRF4905LPBF is commonly used in applications like DC-DC converters, power management systems, and motor drivers.
These features make the IRF4905LPBF a versatile choice for high-power and high-efficiency electronic designs.
Pinout
The IRF4905LPBF is a P-channel MOSFET typically used in switching applications. It is housed in a TO-220 package, which has three pins. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the conductivity between the source and drain can be controlled.
2. Drain (D): The drain is the terminal through which the main current flows from the source when the MOSFET is in the "on" state.
3. Source (S): This is the terminal from which the carriers enter the channel. In a P-channel MOSFET like the IRF4905LPBF, the source is typically connected to a more positive voltage compared to the drain during operation.
The IRF4905LPBF is designed for high-current applications, featuring a continuous drain current of up to -74A and a drain-source voltage of -55V. It is commonly used in applications requiring efficient power management and switching, such as in power supplies, motor drives, and inverter circuits.
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the conductivity between the source and drain can be controlled.
2. Drain (D): The drain is the terminal through which the main current flows from the source when the MOSFET is in the "on" state.
3. Source (S): This is the terminal from which the carriers enter the channel. In a P-channel MOSFET like the IRF4905LPBF, the source is typically connected to a more positive voltage compared to the drain during operation.
The IRF4905LPBF is designed for high-current applications, featuring a continuous drain current of up to -74A and a drain-source voltage of -55V. It is commonly used in applications requiring efficient power management and switching, such as in power supplies, motor drives, and inverter circuits.
Manufacturer
The IRF4905LPBF is manufactured by Infineon Technologies AG. Infineon is a German semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor solutions. It is one of the world's leading semiconductor companies, known for its innovations in automotive, industrial power control, power management, digital security solutions, and IoT applications. Infineon's products are used in various applications, including automotive systems, industrial electronics, communication, and consumer electronics. The company is recognized for its commitment to sustainability, energy efficiency, and advancing technology to address global challenges.
Application
The IRF4905LPBF is a P-channel MOSFET commonly used in various power management and switching applications. Its key application areas include power supply circuits, load switching, DC-DC converters, and motor control systems. Due to its ability to handle high current and voltage levels efficiently, it is suitable for automotive electronics, consumer electronics, and industrial equipment. The device is also used in battery-powered devices due to its low on-resistance and efficient thermal performance, which help in minimizing power loss and enhancing battery life. Additionally, its rugged design and fast switching capabilities make it ideal for applications requiring reliable and efficient power management.
Package
The IRF4905LPBF is a P-channel MOSFET that comes in a TO-220 package. This type of package is commonly used for power semiconductor devices, allowing for efficient heat dissipation and ease of mounting onto heat sinks for enhanced thermal management.
