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IRF6614TRPBF
+BOMIRF6614 - 12V-300V N-CHANNEL POW
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IRF6614TRPBF
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 12.7A (Ta), 55A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 8.3mOhm @ 12.7A, 10V |
| Vgs(th)(Max) @ Id | 2.25V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 29 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2560 pF @ 20 V |
| Power Dissipation (Max) | 2.1W (Ta), 42W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET™ ST |
Tổng quan
Description
The IRF6614TRPBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Infineon Technologies. It is part of the HEXFET® family known for high efficiency and fast switching, making it suitable for various applications including DC-DC converters, load switch applications, and motor drives. The IRF6614TRPBF is characterized by its low on-resistance, which helps minimize power loss and improve overall efficiency in electronic circuits.
Key specifications of the IRF6614TRPBF include a maximum drain-source voltage (V_ds) of 20V, a continuous drain current (I_d) of around 20A, and a gate threshold voltage typically around 1V. It is housed in a compact SO-8 package, which is ideal for space-constrained applications. The device also features a low gate charge, contributing to reduced power consumption and faster switching speeds. Its lead-free and RoHS-compliant design ensures environmental sustainability. Overall, the IRF6614TRPBF is a versatile and reliable component for high-performance power management solutions.
Key specifications of the IRF6614TRPBF include a maximum drain-source voltage (V_ds) of 20V, a continuous drain current (I_d) of around 20A, and a gate threshold voltage typically around 1V. It is housed in a compact SO-8 package, which is ideal for space-constrained applications. The device also features a low gate charge, contributing to reduced power consumption and faster switching speeds. Its lead-free and RoHS-compliant design ensures environmental sustainability. Overall, the IRF6614TRPBF is a versatile and reliable component for high-performance power management solutions.
Equivalent
The IRF6614TRPBF is a power MOSFET commonly used in switching applications. Equivalent products include:
1. NXP PSMN1R2-25YLC - Similar voltage and current ratings.
2. Infineon BSC028N06NS3 - Comparable characteristics for voltage and current.
3. ON Semiconductor NTMFS5C604NL - Equivalent for similar applications.
4. STMicroelectronics STP55NF06L - Similar specifications for power switching.
Ensure to verify the specs to match your application needs fully.
1. NXP PSMN1R2-25YLC - Similar voltage and current ratings.
2. Infineon BSC028N06NS3 - Comparable characteristics for voltage and current.
3. ON Semiconductor NTMFS5C604NL - Equivalent for similar applications.
4. STMicroelectronics STP55NF06L - Similar specifications for power switching.
Ensure to verify the specs to match your application needs fully.
Features
The IRF6614TRPBF is a power MOSFET designed for efficient power management applications. Key features include:
1. Type: N-channel MOSFET.
2. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) of up to 20A.
3. R_DS(on): The device offers a low on-resistance, enhancing efficiency in switching applications. It is often in the range of a few milliohms.
4. Package: Supplied in a compact and thermally efficient SO-8 package.
5. Temperature Range: Designed to operate over a broad temperature range, usually from -55°C to 150°C.
6. Applications: Ideal for use in synchronous rectification, DC-DC converters, and other applications requiring efficient power switching.
7. Performance: Offers fast switching speeds and high efficiency due to its low gate charge and minimal on-state losses.
The IRF6614TRPBF is well-suited for applications where space is limited but high power handling is essential.
1. Type: N-channel MOSFET.
2. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) of up to 20A.
3. R_DS(on): The device offers a low on-resistance, enhancing efficiency in switching applications. It is often in the range of a few milliohms.
4. Package: Supplied in a compact and thermally efficient SO-8 package.
5. Temperature Range: Designed to operate over a broad temperature range, usually from -55°C to 150°C.
6. Applications: Ideal for use in synchronous rectification, DC-DC converters, and other applications requiring efficient power switching.
7. Performance: Offers fast switching speeds and high efficiency due to its low gate charge and minimal on-state losses.
The IRF6614TRPBF is well-suited for applications where space is limited but high power handling is essential.
Pinout
The IRF6614TRPBF is a HEXFET power MOSFET manufactured by Infineon Technologies. It is packaged in a DirectFET format, specifically the DirectFET MX 7-pin package. This MOSFET is designed for high-performance applications requiring efficient power management.
Pin Count:
The IRF6614TRPBF has 7 pins.
Pin Functions:
1. Source (S): Several pins are typically connected to the source terminal, providing the path for current to flow out of the MOSFET.
2. Gate (G): This pin controls the MOSFET's operation. A voltage applied to the gate allows current to flow through the device.
3. Drain (D): This pin is the terminal through which current enters the MOSFET.
The DirectFET package allows for improved thermal performance and reduced package resistance, making the IRF6614TRPBF suitable for applications like DC-DC converters and motor drives.
Pin Count:
The IRF6614TRPBF has 7 pins.
Pin Functions:
1. Source (S): Several pins are typically connected to the source terminal, providing the path for current to flow out of the MOSFET.
2. Gate (G): This pin controls the MOSFET's operation. A voltage applied to the gate allows current to flow through the device.
3. Drain (D): This pin is the terminal through which current enters the MOSFET.
The DirectFET package allows for improved thermal performance and reduced package resistance, making the IRF6614TRPBF suitable for applications like DC-DC converters and motor drives.
Manufacturer
The IRF6614TRPBF is manufactured by Infineon Technologies. Infineon is a leading global semiconductor company that provides a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and security solutions. The company primarily focuses on automotive, industrial, and consumer electronics markets, offering products that improve energy efficiency, enable mobility, and enhance security. Infineon's expertise lies in developing innovative technologies that address the key challenges of modern electronics.
Application
The IRF6614TRPBF is a HEXFET power MOSFET designed for various applications requiring efficient power management. Its primary applications include:
1. DC-DC Converters: Utilized in power supplies to enhance energy efficiency and thermal performance.
2. Motor Control: Suitable for driving motors in industrial and consumer electronics.
3. Load Switching: Used in switching applications due to its low on-resistance and fast switching capabilities.
4. Battery Management: Employed in battery protection circuits to control discharge and charge processes.
5. Telecommunications: Integral in power distribution for network devices and systems.
These applications leverage the MOSFET's high efficiency, low conduction losses, and thermal performance.
1. DC-DC Converters: Utilized in power supplies to enhance energy efficiency and thermal performance.
2. Motor Control: Suitable for driving motors in industrial and consumer electronics.
3. Load Switching: Used in switching applications due to its low on-resistance and fast switching capabilities.
4. Battery Management: Employed in battery protection circuits to control discharge and charge processes.
5. Telecommunications: Integral in power distribution for network devices and systems.
These applications leverage the MOSFET's high efficiency, low conduction losses, and thermal performance.
Package
The IRF6614TRPBF is typically available in a SO-8 (Small Outline) package type. This package is suitable for surface-mount applications and is commonly used for power MOSFETs like the IRF6614TRPBF, facilitating efficient thermal performance and compact design.
