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IRF6623TRPBF
+BOMMOSFET N-CH 20V 16A DIRECTFET
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IRF6623TRPBF
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Bảng dữ liệu IRF6623TRPBF DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Series | HEXFET® |
| Part Status | Not For New Designs |
| Base Product Number | IRF6623 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 55A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1360 pF @ 10 V |
| Power Dissipation (Max) | 1.4W (Ta), 42W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET™ ST |
| Package | DirectFET™ Isometric ST |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Tổng quan
Description
The IRF6623TRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Infineon Technologies, commonly used for power management in electronic circuits. It features a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of 29A, making it suitable for applications requiring efficient power conversion and switching. The MOSFET comes in a compact D-Pak (TO-252) package, offering good thermal performance and easy integration into circuit boards.
Key characteristics include low on-resistance (R_DS(on)), which minimizes power loss and heat generation, and a fast switching speed, which enhances the efficiency of power conversion systems. The device is often used in automotive, industrial, and consumer electronics applications where reliability and space-saving are critical. Additionally, the IRF6623TRPBF is RoHS compliant, meaning it adheres to environmental regulations for hazardous substances. Its robust design ensures longevity and consistent performance, making it a popular choice for engineers and designers in need of a dependable power management solution.
Key characteristics include low on-resistance (R_DS(on)), which minimizes power loss and heat generation, and a fast switching speed, which enhances the efficiency of power conversion systems. The device is often used in automotive, industrial, and consumer electronics applications where reliability and space-saving are critical. Additionally, the IRF6623TRPBF is RoHS compliant, meaning it adheres to environmental regulations for hazardous substances. Its robust design ensures longevity and consistent performance, making it a popular choice for engineers and designers in need of a dependable power management solution.
Equivalent
The IRF6623TRPBF is a power MOSFET, and equivalent products are typically other N-channel MOSFETs with similar voltage, current, and RDS(on) specifications. Some equivalents might include:
1. IRF6635 - Offers similar characteristics and performance.
2. IRFR5305 - Another compatible option, depending on specific application requirements.
3. NTD4906N - A similar MOSFET with comparable specs.
4. FQD19N10L - An alternative with similar ratings.
Always verify specifications to ensure compatibility with your application.
1. IRF6635 - Offers similar characteristics and performance.
2. IRFR5305 - Another compatible option, depending on specific application requirements.
3. NTD4906N - A similar MOSFET with comparable specs.
4. FQD19N10L - An alternative with similar ratings.
Always verify specifications to ensure compatibility with your application.
Features
The IRF6623TRPBF is a HEXFET® power MOSFET designed by Infineon Technologies. It features low on-resistance (R_DS(on)) for efficient operation, which enhances performance in switching applications. This device operates with a high-speed switching capability, making it suitable for high-frequency applications. It typically comes in a D2PAK (TO-263) package that aids in heat dissipation, ensuring reliability under high power conditions. The MOSFET is designed for a maximum drain-source voltage (V_DS) of 30V and supports a continuous drain current (I_D) of up to 62A, making it robust for demanding workloads. Additionally, it offers a low gate charge (Q_g) to reduce drive losses and improve efficiency. The IRF6623TRPBF is typically used in applications such as DC-DC converters, synchronous rectification in SMPS, and other power management systems. It is lead-free and RoHS compliant, aligning with environmental and safety standards.
Pinout
The IRF6623TRPBF is a HEXFET power MOSFET from Infineon Technologies designed for use in a variety of power conversion applications. This component is typically offered in a DirectFET package, which does not have traditional leads like other semiconductor packages. Instead, it features pads on the bottom for surface mounting.
The IRF6623TRPBF has the following key characteristics:
- Pin Count: The DirectFET package does not have a traditional pin count, but it features multiple connection pads on the underside of the package for gate, drain, and source connections.
- Function: It functions primarily as a switch or amplifier in power management applications. It is designed for high efficiency and performance in applications such as DC-DC converters, motor drives, and other power management systems.
The specific connection layout and number of contacts may vary slightly based on the exact package variant, so consulting the datasheet or the application notes from Infineon for precise mounting and electrical connection details is recommended.
The IRF6623TRPBF has the following key characteristics:
- Pin Count: The DirectFET package does not have a traditional pin count, but it features multiple connection pads on the underside of the package for gate, drain, and source connections.
- Function: It functions primarily as a switch or amplifier in power management applications. It is designed for high efficiency and performance in applications such as DC-DC converters, motor drives, and other power management systems.
The specific connection layout and number of contacts may vary slightly based on the exact package variant, so consulting the datasheet or the application notes from Infineon for precise mounting and electrical connection details is recommended.
Manufacturer
The IRF6623TRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor company that focuses on designing, manufacturing, and supplying a broad range of semiconductor solutions. Their product portfolio includes power semiconductors, microcontrollers, and sensors, among others.
Infineon operates in various sectors including automotive, industrial power control, power management & multimarket, and digital security solutions. They are known for their innovations in energy efficiency, mobility, and security, serving industries such as automotive, industrial, consumer electronics, and security technologies.
Originally spun off from Siemens AG in 1999, Infineon has grown to become one of the leading semiconductor manufacturers globally. The company is particularly noted for its advancements in power semiconductors and automotive electronics, providing essential components for applications like electric vehicles, renewable energy systems, and smart devices.
Infineon operates in various sectors including automotive, industrial power control, power management & multimarket, and digital security solutions. They are known for their innovations in energy efficiency, mobility, and security, serving industries such as automotive, industrial, consumer electronics, and security technologies.
Originally spun off from Siemens AG in 1999, Infineon has grown to become one of the leading semiconductor manufacturers globally. The company is particularly noted for its advancements in power semiconductors and automotive electronics, providing essential components for applications like electric vehicles, renewable energy systems, and smart devices.
Application
The IRF6623TRPBF is a HEXFET power MOSFET, commonly used in applications requiring efficient power management and switching. Typical application areas include:
1. DC-DC Converters: Used for converting voltage levels in electronic devices.
2. Motor Drives: Suitable for controlling motors in various industrial and automotive applications.
3. Power Management: Employed in power supply circuits for efficient energy distribution.
4. Load Switches: Acts as an on/off switch for high current loads.
5. Inverters: Used in DC to AC conversion systems, such as solar inverters.
6. Battery Management: Helps in charging and discharging processes of battery systems efficiently.
These applications benefit from the MOSFET's low on-state resistance and high-speed switching capabilities.
1. DC-DC Converters: Used for converting voltage levels in electronic devices.
2. Motor Drives: Suitable for controlling motors in various industrial and automotive applications.
3. Power Management: Employed in power supply circuits for efficient energy distribution.
4. Load Switches: Acts as an on/off switch for high current loads.
5. Inverters: Used in DC to AC conversion systems, such as solar inverters.
6. Battery Management: Helps in charging and discharging processes of battery systems efficiently.
These applications benefit from the MOSFET's low on-state resistance and high-speed switching capabilities.
Package
The IRF6623TRPBF is a surface-mount package type known as a DirectFET. This package style allows for improved thermal performance and reduced package parasitics, making it suitable for high-frequency and high-efficiency applications.
