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IRF6635TRPBF
+BOMMOSFET N-CH 30V 32A DIRECTFET
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IRF6635TRPBF
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Bảng dữ liệu IRF6635TRPBF DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | Infineon Technologies |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 32A (Ta), 180A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 1.8mOhm @ 32A, 10V |
| Vgs(th)(Max) @ Id | 2.35V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 71 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 5970 pF @ 15 V |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET™ MX |
Tổng quan
Description
The IRF6635TRPBF is a power MOSFET designed by Infineon Technologies, formerly International Rectifier. It is part of the HEXFET® Power MOSFET series, commonly used in high-efficiency power conversion applications. This MOSFET features an N-channel configuration, which means it conducts when a positive voltage is applied to the gate relative to the source.
Key specifications include a drain-source breakdown voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 90A, making it suitable for demanding applications such as motor control and power supplies. The device is optimized for low on-resistance (R_DS(on)) to minimize power loss and improve efficiency. It also includes a fast switching speed, which is crucial for high-frequency applications.
The IRF6635TRPBF is housed in a D2PAK package, suitable for surface mount technology, and is lead-free, complying with RoHS standards. Its robust design ensures reliable performance in various industrial and consumer electronics, offering an excellent balance of cost, performance, and efficiency.
Key specifications include a drain-source breakdown voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 90A, making it suitable for demanding applications such as motor control and power supplies. The device is optimized for low on-resistance (R_DS(on)) to minimize power loss and improve efficiency. It also includes a fast switching speed, which is crucial for high-frequency applications.
The IRF6635TRPBF is housed in a D2PAK package, suitable for surface mount technology, and is lead-free, complying with RoHS standards. Its robust design ensures reliable performance in various industrial and consumer electronics, offering an excellent balance of cost, performance, and efficiency.
Equivalent
The IRF6635TRPBF is an N-channel MOSFET commonly used in power management applications. Equivalent products include:
1. STP16NF06 by STMicroelectronics
2. FQP30N06L by ON Semiconductor (Fairchild)
3. NTD4906N by ON Semiconductor
4. FDMS86252 by ON Semiconductor
5. IPP060N06N by Infineon Technologies
Ensure to verify the electrical parameters and package type before substituting to confirm compatibility.
1. STP16NF06 by STMicroelectronics
2. FQP30N06L by ON Semiconductor (Fairchild)
3. NTD4906N by ON Semiconductor
4. FDMS86252 by ON Semiconductor
5. IPP060N06N by Infineon Technologies
Ensure to verify the electrical parameters and package type before substituting to confirm compatibility.
Features
The IRF6635TRPBF is a HEXFET™ power MOSFET designed for applications requiring high efficiency and reliability. Key features include:
1. Voltage Rating: It has a drain-to-source voltage (V_DS) rating of 30V, making it suitable for low-voltage applications.
2. Current Handling: The MOSFET can handle continuous drain current up to 50A, providing robust performance in demanding environments.
3. Low On-Resistance: It features a low R_DS(on) of approximately 9.8 mΩ, which reduces power losses and improves efficiency.
4. Configuration: It comes in an SO-8 package, offering a compact design for space-constrained applications.
5. Fast Switching: The device supports high-speed switching, enhancing performance in switching applications.
6. Thermal Performance: The design includes effective thermal management, ensuring reliability under high power conditions.
7. Lead-Free: This device is RoHS compliant, making it environmentally friendly.
These features make the IRF6635TRPBF suitable for a variety of applications, including DC-DC converters, power management systems, and more.
1. Voltage Rating: It has a drain-to-source voltage (V_DS) rating of 30V, making it suitable for low-voltage applications.
2. Current Handling: The MOSFET can handle continuous drain current up to 50A, providing robust performance in demanding environments.
3. Low On-Resistance: It features a low R_DS(on) of approximately 9.8 mΩ, which reduces power losses and improves efficiency.
4. Configuration: It comes in an SO-8 package, offering a compact design for space-constrained applications.
5. Fast Switching: The device supports high-speed switching, enhancing performance in switching applications.
6. Thermal Performance: The design includes effective thermal management, ensuring reliability under high power conditions.
7. Lead-Free: This device is RoHS compliant, making it environmentally friendly.
These features make the IRF6635TRPBF suitable for a variety of applications, including DC-DC converters, power management systems, and more.
Pinout
The IRF6635TRPBF is a HEXFET Power MOSFET produced by Infineon Technologies. It comes in a DirectFET package with a distinctive pin layout that is optimized for efficient thermal performance and high-density applications. The IRF6635TRPBF typically features a 3-pin configuration, but the DirectFET package can have additional pads for enhanced electrical and thermal contact.
The primary function of the IRF6635TRPBF MOSFET is to act as a switch or amplifier in various electronic circuits. It is designed for high-speed switching applications and is commonly used in power management, DC-DC converters, synchronous rectification, and motor control systems.
With its low on-state resistance and fast switching capabilities, the IRF6635TRPBF is well-suited for improving the efficiency and performance of power electronic systems. Its design allows for optimal performance in demanding environments, providing reliability and durability in its applications.
The primary function of the IRF6635TRPBF MOSFET is to act as a switch or amplifier in various electronic circuits. It is designed for high-speed switching applications and is commonly used in power management, DC-DC converters, synchronous rectification, and motor control systems.
With its low on-state resistance and fast switching capabilities, the IRF6635TRPBF is well-suited for improving the efficiency and performance of power electronic systems. Its design allows for optimal performance in demanding environments, providing reliability and durability in its applications.
Manufacturer
The IRF6635TRPBF is manufactured by Infineon Technologies, a leading global semiconductor company. Infineon is known for producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and security solutions. The company serves various markets such as automotive, industrial, consumer electronics, and communications. Infineon's focus is on innovation and providing efficient, reliable, and secure solutions that enhance the quality of life and enable technological advancement.
Application
The IRF6635TRPBF is a power MOSFET commonly used in various applications due to its efficiency and performance. Key application areas include:
1. Power Management: Used in DC-DC converters and voltage regulators for efficient power control.
2. Automotive: Employed in electronic control units (ECUs) for load switching and power distribution.
3. Industrial: Utilized in motor control systems and robotics for high-power switching.
4. Consumer Electronics: Found in power adapters and chargers for managing power delivery.
5. Telecommunications: Used in base stations and networking equipment for power amplification and management.
These applications benefit from the MOSFET's low on-resistance and fast switching speeds.
1. Power Management: Used in DC-DC converters and voltage regulators for efficient power control.
2. Automotive: Employed in electronic control units (ECUs) for load switching and power distribution.
3. Industrial: Utilized in motor control systems and robotics for high-power switching.
4. Consumer Electronics: Found in power adapters and chargers for managing power delivery.
5. Telecommunications: Used in base stations and networking equipment for power amplification and management.
These applications benefit from the MOSFET's low on-resistance and fast switching speeds.
Package
The IRF6635TRPBF is a MOSFET transistor packaged in a TO-252 (DPAK) surface-mount package. This package type is designed for efficient thermal performance and is commonly used in various electronic applications requiring compactness and reliability.
