IRF6727MTRPBF

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IRF6727MTRPBF

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MOSFET N-CH 30V 32A DIRECTFET

  • Nhà sản xuấtCông nghệ Infineon

  • Ông. Phần #IRF6727MTRPBF

  • Bảng dữ liệu IRF6727MTRPBF DataSheet

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Thông số kỹ thuật

thuộc tính Giá trị
Series HEXFET®
Part Status Last Time Buy
Base Product Number IRF6727
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6190 pF @ 15 V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DIRECTFET™ MX
Package DirectFET™ Isometric MX
Packaging Cut Tape (CT), Tape & Reel (TR)

Tổng quan

Description

The IRF6727MTRPBF is a power MOSFET designed by Infineon Technologies, primarily used in applications requiring efficient power management and switching. It features an N-channel configuration with low on-resistance, enhancing its ability to handle high current loads while minimizing power loss. The device is housed in a D2PAK (TO-263) package, which provides efficient thermal performance and is suitable for surface-mount applications.
Key specifications of the IRF6727MTRPBF include a drain-source voltage (V_ds) of 200V, a continuous drain current (I_d) of approximately 62A, and a maximum power dissipation (P_d) of around 200W. It also boasts fast switching speeds, making it ideal for applications such as DC-DC converters, motor drives, and other high-efficiency power supplies.
The "PBF" suffix indicates that the device is lead-free and RoHS compliant, aligning with current environmental standards. Overall, the IRF6727MTRPBF is a reliable choice for designers looking for robust performance in demanding power electronics applications.

Equivalent

The IRF6727MTRPBF is a HEXFET power MOSFET produced by Infineon Technologies. Equivalent products can include similar N-channel MOSFETs with comparable voltage and current ratings. Potential equivalents could be the Vishay SiR422DP or the STMicroelectronics STB100NF03L. However, always check the specific electrical characteristics and package compatibility to ensure proper matching, as slight variations can occur between different manufacturers.

Features

The IRF6727MTRPBF is a HEXFET Power MOSFET from Infineon Technologies. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: The continuous drain current (I_D) is rated at 51A.
3. R_DS(on): The on-resistance is very low, typically around 9.5 milliohms, ensuring efficient performance.
4. Package: It is available in a D-Pak (TO-252AA) surface-mount package.
5. Applications: Suitable for a wide range of applications, including DC-DC converters, power management, and motor drives.
6. Temperature: Capable of operating in a wide temperature range, with a junction temperature (T_J) of up to 175°C.
7. Performance: Designed for fast switching and high efficiency in power conversion applications.
These features make the IRF6727MTRPBF ideal for high-performance applications requiring compact form factors and high efficiency.

Pinout

The IRF6727MTRPBF is a HEXFET power MOSFET designed by Infineon Technologies (formerly by International Rectifier). It is typically available in a PowerPAK SO-8 package and features an N-channel MOSFET. The typical pin count for this package is 8 pins, although not all pins are used for electrical connections, as some are used for thermal efficiency.
Key functions and pin configurations include:
1. Drain (D): Typically connected to pins 5, 6, 7, and 8. These pins are usually internally connected to the drain of the MOSFET, which is the output side.
2. Source (S): Usually connected to pins 1, 2, and 3. These pins serve as the input side of the MOSFET.
3. Gate (G): Pin 4 is commonly used as the gate, which controls the MOSFET switching.
This MOSFET is intended for applications requiring high efficiency and fast switching, used in power management, DC-DC converters, and other high-performance applications. Always refer to the specific datasheet for detailed information and verification.

Manufacturer

The IRF6727MTRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor company that specializes in designing, developing, manufacturing, and marketing a wide range of semiconductor products. These products are used in various applications, including automotive, industrial power control, power management, and digital security solutions. Infineon is known for its innovation and leadership in the semiconductor industry, focusing on energy efficiency, mobility, and security.

Application

The IRF6727MTRPBF is a power MOSFET commonly used in various applications due to its efficiency and reliability. Key application areas include:
1. Power Supplies: Used in DC-DC converters and switching power supplies for efficient power management.
2. Motor Control: Helps in controlling motors in industrial and consumer electronics.
3. Inverters: Used in solar inverters and other energy conversion systems.
4. Uninterruptible Power Supplies (UPS): Ensures reliable power delivery and management.
5. Automotive Systems: Suitable for automotive electronics requiring efficient power handling.
These applications benefit from the MOSFET’s low on-resistance and high-speed switching capabilities.

Package

The IRF6727MTRPBF is packaged in a D-Pak (TO-252) surface-mount package.

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