IRF7103TR

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IRF7103TR

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MOSFET 2N-CH 50V 3A 8SOP

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Thông số kỹ thuật

thuộc tính Giá trị
PartStatus Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel
DraintoSourceVoltage(Vdss) 50V
Current-ContinuousDrain(Id)@25°C 3A (Ta)
Vgs(th)(Max)@Id 3V @ 250µA
InputCapacitance(Ciss)(Max)@Vds 290pF @ 25V
Power-Max 2W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154", 3.90mm Width)
SupplierDevicePackage 8-SOP
RdsOn(Max)@Id,Vgs 30mOhm @ 3A, 10V
GateCharge(Qg)(Max)@Vgs 30nC @ 10V

Tổng quan

Description

The IRF7103TR is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It is commonly used in power management and electronic circuit designs due to its efficient handling of high current and low voltage.
Key features of the IRF7103TR include:
1. Dual MOSFET Design: Contains two MOSFETs within a single package, which saves space on the circuit board and simplifies design requirements.
2. Low On-Resistance: Offers minimal power loss and improved efficiency, making it ideal for applications requiring high power efficiency.
3. High-Speed Switching: Suitable for applications that require rapid switching speeds, such as DC-DC converters and power supplies.
4. Compact Package: Typically available in a small form factor, aiding in compact device design.
The IRF7103TR is favored in applications where space is a concern and efficient power consumption is crucial, such as in portable electronics, power management systems, and automotive applications.

Equivalent

The IRF7103TR is a dual N-channel MOSFET. Equivalent products you might consider include the Fairchild FDG6303N, ON Semiconductor NTLUD3C10N, and Vishay Si4925DY. Ensure that the equivalents match in terms of voltage, current ratings, and package type for compatibility with your design. Always check the datasheets for detailed specifications to ensure they meet your application's requirements.

Features

The IRF7103TR is a dual N-channel MOSFET designed for various electronic applications. Key features include:
1. Dual N-Channel Configuration: It contains two N-channel MOSFETs in a single package, optimizing space in compact designs.

2. Voltage Rating: The device typically supports a drain-to-source voltage (V_DS) of around 30V, suitable for moderate power applications.
3. Current Handling: It offers a drain current (I_D) capacity in the range of a few amperes per channel, facilitating efficient power management.
4. Low On-Resistance: The MOSFETs exhibit low on-state resistance, enhancing efficiency by reducing power loss during operation.
5. Fast Switching Speed: It provides rapid switching capabilities, making it ideal for high-frequency applications.
6. SOIC-8 Package: Available in an SOIC-8 surface-mount package, it supports automated assembly processes.
7. Thermal Performance: Offers decent thermal characteristics with an appropriate heat dissipation mechanism, ensuring reliable operation.
These features make the IRF7103TR suitable for use in power management, DC-DC converters, and other electronic circuits requiring efficient power handling and compact design.

Pinout

The IRF7103TR is a dual N-channel MOSFET typically used for switching applications. It comes in an SO-8 package and features a total of 8 pins. The pin configuration and functions are as follows:
1. Pin 1 (Source 1): Source terminal for the first MOSFET.
2. Pin 2 (Gate 1): Gate terminal for the first MOSFET.
3. Pin 3 (Drain 2): Drain terminal for the second MOSFET.
4. Pin 4 (Source 2): Source terminal for the second MOSFET.
5. Pin 5 (Gate 2): Gate terminal for the second MOSFET.
6. Pin 6 (Drain 1): Drain terminal for the first MOSFET.
7. Pin 7 (Drain 1): Drain terminal for the first MOSFET (internally connected to Pin 6).
8. Pin 8 (Drain 2): Drain terminal for the second MOSFET (internally connected to Pin 3).
The IRF7103TR is designed for a variety of applications including battery protection, power management in portable devices, and load switching. Its dual MOSFET configuration allows for efficient use in circuits requiring two switches.

Manufacturer

The IRF7103TR is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer known for producing a wide range of semiconductor solutions, including microcontrollers, sensors, power semiconductors, and embedded security products. The company was originally part of Siemens AG before becoming independent in 1999. Infineon is a global leader in the semiconductor industry, providing products for automotive, industrial, and consumer electronics applications, among others.

Application

The IRF7103TR is a dual N-channel MOSFET commonly used in applications requiring efficient power management and switching. It is often employed in DC-DC converters, voltage regulation modules, and power supply circuits due to its low on-resistance and fast switching capabilities. Additionally, it is suitable for use in motor control, battery-powered devices, and load switching applications. The IRF7103TR's compact packaging and thermal performance make it ideal for space-constrained designs, such as in portable electronics and communication devices. Its reliability and efficiency also make it a good fit for automotive and industrial applications where robust operation is crucial.

Package

The IRF7103TR is a dual N-channel MOSFET packaged in an SOIC-8 (Small Outline Integrated Circuit) package. It is designed for applications requiring efficient power management and switching.

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