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IRF7317TRPBF
+BOMMOSFET N/P-CH 20V 8-SOIC
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IRF7317TRPBF
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Bảng dữ liệu IRF7317TRPBF DataSheet
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Gói SOIC-8
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Có sẵn2170
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 6.6A, 5.3A |
| Rds On(Max) @ Id Vgs | 29mOhm @ 6A, 4.5V |
| Vgs(th)(Max) @ Id | 700mV @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 27nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 900pF @ 15V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Tổng quan
Description
Key Features:
- Voltage Ratings: 55V (N-channel) and -55V (P-channel).
- Current Ratings: 4.3A (N-channel) and -3.7A (P-channel).
- Low On-Resistance (RDS(on)): 85mΩ (N) and 140mΩ (P) at 10V.
- Logic-Level Gate Drive: Compatible with 4.5V drive.
- Applications: DC-DC converters, motor control, and load switching.
This MOSFET pair is ideal for synchronous buck converters and other bidirectional power circuits due to its complementary design. Its small footprint and efficient performance make it suitable for space-constrained designs.
Equivalent
- FDS6898A (Fairchild/ON Semi)
- SI4562DY (Vishay)
- DMN2019LSD (Diodes Inc.)
- NTTFS4C10N (ON Semi)
These alternatives offer similar specifications (e.g., voltage, current, package). Verify exact parameters for compatibility.
Features
- Voltage Ratings: 55V (N-channel) / -55V (P-channel)
- Current Ratings: 4.3A (N-channel) / -3.7A (P-channel)
- Low On-Resistance (RDS(on)): 50mΩ (N-channel) / 110mΩ (P-channel) at 10V
- Fast Switching: Optimized for high-efficiency power applications
- Logic-Level Gate Drive: Compatible with 4.5V drive (N-channel)
- Low Gate Charge: Enhances switching performance
- AEC-Q101 Qualified: Suitable for automotive applications
Ideal for DC-DC converters, motor control, and power management.
Pinout
Pin Functions (per channel pair):
1. Pins 1, 2, 3 (Source 1, Gate 1, Drain 1) – N-channel MOSFET.
2. Pins 5, 6, 7 (Drain 2, Gate 2, Source 2) – P-channel MOSFET.
3. Pins 4, 8 – Not connected (NC).
Key Features:
- VDS: ±20V (N/P-channel).
- ID: 4.3A (N-channel), -3.7A (P-channel).
- Logic-level gate drive.
Commonly used in synchronous buck converters and power management circuits.
Application
1. Power Management – DC-DC converters, voltage regulation.
2. Motor Control – H-bridge circuits for small motors.
3. Load Switching – Efficient power distribution in portable devices.
4. Battery Protection – Reverse polarity and overcurrent protection.
5. Automotive Systems – LED drivers and infotainment power control.
Its compact SOIC-8 package and low on-resistance make it suitable for space-constrained, high-efficiency applications.