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IRFB3206PBF
+BOMMOSFET N-CH 60V 120A TO220AB
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IRFB3206PBF
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Bảng dữ liệu IRFB3206PBF DataSheet
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Gói TO-220-3
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Có sẵn6622
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 120A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 3mOhm @ 75A, 10V |
| Vgs(th)(Max)@Id | 4V @ 150µA |
| GateCharge(Qg)(Max)@Vgs | 170 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 6540 pF @ 50 V |
| PowerDissipation(Max) | 300W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
Tổng quan
Description
The IRFB3206PBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Infineon Technologies. It is part of the HEXFET series, which is known for high efficiency and rugged performance. This particular MOSFET is typically used in applications requiring high-speed switching and low on-state resistance, such as in power supplies, motor drives, and DC-DC converters.
Key features of the IRFB3206PBF include:
1. Voltage and Current Ratings: It has a drain-to-source voltage (V_DS) of 60V and can handle continuous current levels up to 240A, making it suitable for high-power applications.
2. On-State Resistance: It offers a low R_DS(on) of 3.2 milliohms, which contributes to reduced power losses and improved efficiency.
3. Package: It's packaged in a TO-220AB, which is suitable for through-hole mounting and provides effective heat dissipation.
4. Temperature Range: It can operate over a wide temperature range, ensuring reliability under various environmental conditions.
Overall, the IRFB3206PBF is a versatile and reliable component for demanding power electronic applications.
Key features of the IRFB3206PBF include:
1. Voltage and Current Ratings: It has a drain-to-source voltage (V_DS) of 60V and can handle continuous current levels up to 240A, making it suitable for high-power applications.
2. On-State Resistance: It offers a low R_DS(on) of 3.2 milliohms, which contributes to reduced power losses and improved efficiency.
3. Package: It's packaged in a TO-220AB, which is suitable for through-hole mounting and provides effective heat dissipation.
4. Temperature Range: It can operate over a wide temperature range, ensuring reliability under various environmental conditions.
Overall, the IRFB3206PBF is a versatile and reliable component for demanding power electronic applications.
Equivalent
The IRFB3206PBF is a N-channel MOSFET. Equivalent products include:
1. STMicroelectronics STP310N10F7
2. ON Semiconductor NTP6411ANG
3. Vishay SiHF3200
4. Infineon IPP320N10N3 G
5. Fairchild FDB3632
These equivalents have similar specifications but may vary slightly in parameters like on-resistance or gate charge. Always verify the datasheet to ensure compatibility with your specific application.
1. STMicroelectronics STP310N10F7
2. ON Semiconductor NTP6411ANG
3. Vishay SiHF3200
4. Infineon IPP320N10N3 G
5. Fairchild FDB3632
These equivalents have similar specifications but may vary slightly in parameters like on-resistance or gate charge. Always verify the datasheet to ensure compatibility with your specific application.
Features
The IRFB3206PBF is a power MOSFET designed for high-efficiency applications. Key features include:
1. VDSS: 60V - The drain-to-source voltage rating allows it to handle voltages up to 60 volts.
2. RDS(on): 2.4 mΩ - This low on-resistance minimizes power loss and heat generation, improving efficiency.
3. ID: 210A - It can handle a continuous drain current of 210 amps, making it suitable for high-current applications.
4. N-Channel: The MOSFET uses an N-channel, which typically offers faster switching and lower on-state resistance than P-channel MOSFETs.
5. TO-220AB Package: This through-hole package provides good thermal performance and easy mounting.
6. Temperature Range: It operates effectively across a wide temperature range, enhancing reliability in various environments.
7. Lead-Free: The component is RoHS-compliant, indicating environmentally friendly construction.
These features make the IRFB3206PBF ideal for applications like motor drives, power supplies, and DC-DC converters where high current, low conduction loss, and efficient thermal performance are crucial.
1. VDSS: 60V - The drain-to-source voltage rating allows it to handle voltages up to 60 volts.
2. RDS(on): 2.4 mΩ - This low on-resistance minimizes power loss and heat generation, improving efficiency.
3. ID: 210A - It can handle a continuous drain current of 210 amps, making it suitable for high-current applications.
4. N-Channel: The MOSFET uses an N-channel, which typically offers faster switching and lower on-state resistance than P-channel MOSFETs.
5. TO-220AB Package: This through-hole package provides good thermal performance and easy mounting.
6. Temperature Range: It operates effectively across a wide temperature range, enhancing reliability in various environments.
7. Lead-Free: The component is RoHS-compliant, indicating environmentally friendly construction.
These features make the IRFB3206PBF ideal for applications like motor drives, power supplies, and DC-DC converters where high current, low conduction loss, and efficient thermal performance are crucial.
Pinout
The IRFB3206PBF is a power MOSFET. It typically has a TO-220 package with three pins. The functions of these pins are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate determines whether the MOSFET is in an 'on' or 'off' state, allowing or preventing current flow between the drain and the source.
2. Drain (D): This pin is the terminal through which the main current flows into the MOSFET when it is in the 'on' state.
3. Source (S): This pin is the terminal through which the current flows out of the MOSFET. It is typically connected to the ground in many circuit configurations.
The IRFB3206PBF is designed for high-efficiency power management applications, thanks to its low on-state resistance and high current capacity.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate determines whether the MOSFET is in an 'on' or 'off' state, allowing or preventing current flow between the drain and the source.
2. Drain (D): This pin is the terminal through which the main current flows into the MOSFET when it is in the 'on' state.
3. Source (S): This pin is the terminal through which the current flows out of the MOSFET. It is typically connected to the ground in many circuit configurations.
The IRFB3206PBF is designed for high-efficiency power management applications, thanks to its low on-state resistance and high current capacity.
Manufacturer
The IRFB3206PBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that provides a wide range of semiconductor solutions. The company is known for its focus on automotive, industrial power control, power management, and digital security markets. Infineon's products include microcontrollers, power semiconductors, sensors, and security ICs, catering to various applications such as automotive electronics, industrial drives, consumer electronics, and communication infrastructure. The company is recognized for its innovation and commitment to energy efficiency, safety, and security.
Application
The IRFB3206PBF is a power MOSFET designed for high-efficiency applications. Its primary application areas include power supplies, motor control, and DC-DC converters. It is also used in battery management systems, uninterruptible power supplies (UPS), and solar inverters. The MOSFET’s characteristics make it suitable for switching and amplification tasks in automotive electronics, industrial machinery, and consumer electronics. Its low on-resistance and high current-carrying capability make it ideal for applications requiring efficient power conversion and management.
Package
The IRFB3206PBF is a MOSFET transistor housed in a TO-220 package. This package type is commonly used for power components due to its capability to handle higher power levels and facilitate efficient heat dissipation.
