IRFB4620PBF

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IRFB4620PBF

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IRFB4620 - 12V-300V N-CHANNEL PO

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Thông số kỹ thuật

thuộc tính Giá trị
Supplier Rochester Electronics, LLC
Package / Case Bulk
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain(Id) @ 25°C 25A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 72.5mOhm @ 15A, 10V
Vgs(th)(Max) @ Id 5V @ 100µA
Gate Charge(Qg)(Max) @ Vgs 38 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1710 pF @ 50 V
Power Dissipation (Max) 144W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB

Tổng quan

Description

The IRFB4620PBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) developed by Infineon Technologies. It is designed for applications requiring high efficiency and fast switching. Key features include a voltage rating of 200V and a continuous drain current of 75A, making it suitable for high-power applications. The MOSFET comes in a TO-220 package, which is commonly used for power semiconductors due to its excellent thermal performance.
This component is part of the HEXFET® Power MOSFET series, known for low on-resistance and high-speed switching capabilities. The IRFB4620PBF is often used in power supplies, motor drives, and other applications where energy efficiency and high performance are crucial. Additionally, it is lead-free and RoHS compliant, reflecting its compliance with environmental standards. Overall, the IRFB4620PBF offers a robust solution for engineers looking to optimize performance in power management systems.

Equivalent

The IRFB4620PBF is a N-channel MOSFET primarily used for high-speed switching applications. Equivalent products include:
1. STMicroelectronics STP60NF06 - Similar current and voltage ratings.
2. ON Semiconductor FDP047N10 - Offers comparable performance in power switching.
3. Infineon IPP60R199CP - Suitable alternative with similar characteristics.
4. Vishay SIHF40N60E - Generally used in similar applications.
Ensure to cross-verify electrical specifications and thermal characteristics for compatibility with your application.

Features

The IRFB4620PBF is a power MOSFET known for its efficiency and reliability in high-speed switching applications. Key features include:
1. Voltage and Current Ratings: It has a maximum drain-source voltage of 200V and can handle continuous drain current up to 70A, making it suitable for various power management applications.
2. Low On-Resistance: The MOSFET has a low on-state resistance (R_DS(on)) of 0.027 ohms, reducing power loss and enhancing efficiency.
3. Thermal Performance: It offers good thermal performance with a maximum junction temperature of 175°C, ensuring reliability under high-temperature operations.
4. Fast Switching: The device supports rapid switching speeds, which is beneficial for switching power supplies and motor control.
5. TO-220 Package: It is housed in a TO-220 package, providing ease of mounting and effective heat dissipation.
6. RoHS Compliant: The IRFB4620PBF is environmentally friendly, meeting RoHS standards for lead-free components.
These features make the IRFB4620PBF an excellent choice for applications involving high voltage and high current, such as inverters, motor drives, and power converters.

Pinout

The IRFB4620PBF is a power MOSFET produced by Infineon Technologies. It is primarily used for high-speed switching applications.
The pin count for the IRFB4620PBF is three. Here are the functions of each pin:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal where the load is connected. The current flows from the drain to the source when the MOSFET is in the 'on' state.
3. Source (S): This pin serves as the return path for the current flowing through the drain.
These pins are configured in a TO-220 package, which is a common configuration used for discrete semiconductors. The IRFB4620PBF features low on-state resistance and high-speed switching capabilities, making it suitable for applications such as motor drives, power supplies, and inverters.

Manufacturer

The IRFB4620PBF is a power MOSFET manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that originated from a Siemens AG spinoff in 1999. It is known for producing a wide range of semiconductor solutions, including microcontrollers, sensors, and power semiconductors used in automotive, industrial, and consumer electronics applications. Infineon is recognized for its focus on energy efficiency, mobility, and security solutions.

Application

The IRFB4620PBF is a power MOSFET used in various applications due to its high efficiency and fast switching capabilities. It is commonly found in:
1. Switching Power Supplies: Used for its efficiency in converting power with minimal losses.
2. Motor Drives: Provides precise control in motor applications such as industrial machines and electric vehicles.
3. Inverters: Utilized in solar inverters and UPS systems for effective energy conversion.
4. DC-DC Converters: Employed in various electronic devices for voltage level conversion.
5. Audio Amplifiers: Used to achieve high-quality sound output with efficient power handling.
These applications benefit from the MOSFET's ability to handle high voltages and currents while maintaining a compact form factor.

Package

The IRFB4620PBF is a MOSFET transistor packaged in a TO-220 type. This package is suitable for high-power applications and includes three leads: the gate, drain, and source. The TO-220 package allows for efficient heat dissipation, often equipped with a metal tab for mounting to a heatsink.

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