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IRFBG20PBF
+BOMMOSFET N-CH 1000V 1.4A TO220AB
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Nhà sản xuấtSản phẩm Vishay Siliconix
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Ông. Phần #IRFBG20PBF
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Bảng dữ liệu IRFBG20PBF DataSheet
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Gói TO-220-3
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain(Id) @ 25°C | 1.4A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 11Ohm @ 840mA, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 38 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 500 pF @ 25 V |
| Power Dissipation (Max) | 54W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
Tổng quan
Description
Key specifications typically include a low on-resistance, which minimizes power loss and improves efficiency, and a high-speed switching capability, which is crucial for applications requiring fast response times. The "PBF" suffix indicates that the device is lead-free, aligning with environmental regulations and standards. This component is generally available in a TO-220 package, facilitating easy mounting and integration into various electronic circuits.
Overall, the IRFBG20PBF is valued for its reliability, efficiency, and performance in demanding electrical environments. For precise usage and specifications, consulting the datasheet provided by the manufacturer is recommended.
Equivalent
1. STMicroelectronics STP55NF06
2. ON Semiconductor FQP50N06
3. NXP PSMN017-30PL
4. Vishay SiHF540
These equivalents have similar voltage, current ratings, and package types, though it's essential to verify specific electrical characteristics and package compatibility for your application.
Features
1. Voltage and Current Ratings:
- Drain-Source Voltage (Vds): 200V
- Continuous Drain Current (Id): 17A at 25°C
2. Low On-Resistance:
- Rds(on) is approximately 0.18 ohms, which facilitates higher efficiency by reducing conduction losses.
3. Fast Switching Performance:
- Designed for quick switching, which is beneficial in applications like switch-mode power supplies and DC-DC converters.
4. Robust Design:
- Capable of handling high energy in avalanche and commutation modes, making it suitable for demanding applications.
5. Package Type:
- Available in a TO-220 package, which offers good heat dissipation characteristics.
6. Enhanced Safe Operating Area:
- Provides reliability in demanding conditions due to its robust design.
7. Compliant with Industry Standards:
- Lead-free and RoHS compliant, aligning with environmental and safety standards.
These features make the IRFBG20PBF suitable for various power management applications, including industrial and consumer electronics.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows into the MOSFET when it is in the "on" state.
3. Source (S): The source is the terminal through which the main current flows out of the MOSFET.
This MOSFET is used for applications requiring high efficiency and fast switching. It is commonly employed in power management, automotive, and various other electronic applications.
Manufacturer
Application
1. Power Supply Units: Used in AC/DC converters and DC/DC regulators.
2. Motor Drives: Suitable for controlling motors in industrial and consumer appliances.
3. Inverters: Applied in solar inverters and UPS systems for converting DC to AC.
4. Automotive: Utilized in electronic control units and other automotive power applications.
5. Lighting: Employed in LED drivers and ballast circuits.
6. Industrial Equipment: Used in robotics and automation systems for switching operations.
Its robust design makes it ideal for high-efficiency and high-frequency applications.