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IRFD9024PBF
+BOMMOSFET P-CH 60V 1.6A 4DIP
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Nhà sản xuấtSản phẩm Vishay Siliconix
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Ông. Phần #IRFD9024PBF
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Bảng dữ liệu IRFD9024PBF DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 960mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 25 V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | 4-HVMDIP |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Base Product Number | IRFD9024 |
Tổng quan
Description
With a maximum continuous drain current (I_D) rating, the IRFD9024PBF is ideal for applications requiring efficient power handling and minimal energy loss. Its fast switching speed minimizes transition losses, enhancing overall system efficiency. The MOSFET is offered in a surface-mount package, which supports automated assembly processes and contributes to space-saving designs.
As part of the IRF family of MOSFETs, the IRFD9024PBF is recognized for its reliability and performance in demanding environments. Always refer to the datasheet for detailed electrical characteristics and thermal management guidelines for optimal use.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V, making it suitable for various power applications.
2. Current Handling: With a continuous drain current (I_D) rating of up to 49A, it effectively manages significant loads.
3. Low On-Resistance: The on-resistance (R_DS(on)) is typically low (around 0.025 ohms), which minimizes power loss during operation.
4. Fast Switching Speed: Designed for rapid switching, enhancing efficiency in applications like power supplies and motor controllers.
5. Thermal Performance: It has a high power dissipation capability with a thermal resistance rating that allows for effective heat management.
6. Package Type: Available in a TO-220 package, facilitating easy heat sinking and integration into various designs.
7. Gate Threshold Voltage: Features a low gate threshold voltage, allowing for easy drive and control in logic-level applications.
Overall, the IRFD9024PBF offers robust performance for demanding electronic applications.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): The drain pin is where the current enters the MOSFET from the load. It is the terminal through which the main current flows.
3. Source (S): The source pin is where the current exits the MOSFET back to the power supply or ground.
4. Body (B): The body or substrate is internally connected to the source in most MOSFETs, including this one.
The IRFD9024PBF is commonly used in switching applications and is designed to handle high currents and voltages, making it suitable for various power management tasks in electronic circuits.
Manufacturer
Application
1. Switching Power Supplies: Efficiently regulating output voltage and current.
2. DC-DC Converters: Serving as a switch in boost, buck, or buck-boost converters.
3. Motor Control: Driving inductive loads in brushless DC motors.
4. Load Switching: Controlling power to various electronic devices.
5. LED Drivers: Managing current for LED lighting systems.
Its low on-resistance and fast switching capabilities make it suitable for high-efficiency designs.