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IRFD9120PBF
+BOMMOSFET P-CH 100V 1A 4DIP
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Nhà sản xuấtSản phẩm Vishay Siliconix
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Ông. Phần #IRFD9120PBF
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 600mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 390 pF @ 25 V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | 4-HVMDIP |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Base Product Number | IRFD9120 |
Tổng quan
Description
The IRFD9120PBF is packaged in a TO-220 format, allowing for easy heat dissipation and robust mounting. It is characterized by a low gate threshold voltage, ensuring it can be driven effectively by standard logic levels. The device is also interchangeable with other IRF series MOSFETs, providing design flexibility.
Overall, the IRFD9120PBF is an ideal choice for designers seeking reliable performance in power electronics, combining efficiency with high-current capabilities.
Equivalent
Features
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: The device can handle continuous drain current (I_D) up to 60A at 25°C.
3. On-Resistance: It has a low R_DS(on) of approximately 9.5 mΩ, which enhances efficiency and reduces heat generation during operation.
4. Gate Threshold Voltage: The gate-to-source threshold voltage (V_GS(th)) is between 2V to 4V, facilitating easy drive requirements.
5. Package Type: It comes in a TO-220 package, allowing for efficient thermal dissipation.
6. Fast Switching: The MOSFET exhibits fast switching capabilities, making it suitable for high-frequency applications.
7. Applications: Ideal for use in power supplies, motor drives, and automotive applications.
These features make the IRFD9120PBF a versatile choice for designers looking for reliable and efficient power solutions.
Pinout
1. Gate (G): This pin controls the MOSFET's operation by receiving the input voltage that turns the device on or off.
2. Drain (D): This pin serves as the output for the current flow from the drain to the source when the device is in the 'on' state.
3. Source (S): This pin is connected to the ground or the negative side of the circuit and completes the current path when the MOSFET is activated.
The device is primarily used for switching applications and efficient power management in various electronic circuits. Its compact size and high performance make it suitable for use in power supplies, motor control, and other power electronics applications.
Manufacturer
Founded in 1999 and headquartered in Neubiberg, Germany, Infineon operates in various sectors, including automotive, industrial, and consumer electronics. The company's products are crucial for applications such as power management, automotive safety, and energy efficiency. Infineon focuses on innovation and sustainability, striving to develop solutions that contribute to a greener future through enhanced energy efficiency and reduced carbon footprints.
The IRFD9120PBF is specifically a N-channel MOSFET, widely used in various electronic applications for its efficiency in switching and power management.
Application
1. Power Management: Efficient switching for power supplies and converters.
2. Motor Control: Driving motors in automotive and industrial applications.
3. Load Switching: Controlling high-current loads in various electronic devices.
4. Lighting Control: Used in LED drivers and dimmers.
5. Telecommunications: Signal amplification and circuit protection.
Its low RDS(on) and fast switching capabilities make it suitable for these areas, enhancing performance and efficiency.