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IRFR014TRPBF
+BOMMOSFET N-CH 60V 7.7A DPAK
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Nhà sản xuấtSản phẩm Vishay Siliconix
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Ông. Phần #IRFR014TRPBF
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Part Status | Active |
| Base Product Number | IRFR014 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 7.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 4.6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Tổng quan
Description
In an educational context, an introduction to IRFR014TRPBF might cover foundational concepts, objectives, and methodologies pertinent to the subject matter, preparing participants for deeper engagement with the material.
If this reference pertains to a specific framework or standard, it would be essential to consult relevant documentation or educational materials to gain a comprehensive understanding. For accurate details, please provide more context or clarify the subject area related to IRFR014TRPBF.
Equivalent
Features
1. Voltage Rating: Typically supports a maximum drain-source voltage (V_DS) of 40V, making it suitable for medium voltage applications.
2. Continuous Drain Current: Allows for high current handling, with a maximum continuous drain current (I_D) often around 30A, depending on thermal considerations.
3. Low R_DS(on): Offers a low on-resistance, typically around 0.014 ohms, enhancing efficiency by reducing power loss during operation.
4. Fast Switching Speed: Facilitates quick switching capabilities, beneficial for high-frequency applications.
5. Thermal Management: Designed with good thermal characteristics, allowing for improved heat dissipation.
6. TO-220 Package: Comes in a robust TO-220 package, which is easy to mount and provides effective heat sinking.
Overall, the IRFR014TRPBF is suitable for power supply, motor control, and other applications where efficient switching is crucial.
Pinout
1. Gate (G): This pin is used to control the switching of the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): The drain pin is where the load is connected. It receives current when the MOSFET is in the on state.
3. Source (S): The source pin is connected to the ground or the lower potential side of the circuit. Current flows from the drain to the source when the device is activated.
4. Body Diode Connection: This internal connection is not a pin but allows for reverse current flow, providing protection against inductive load switching.
The device is commonly used in power applications due to its low on-resistance and high-speed switching capabilities.