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IRFR3410TRPBF
+BOMIRFR3410 - 12V-300V N-CHANNEL PO
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Nhà sản xuấtMáy chỉnh sửa quốc tế
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Ông. Phần #IRFR3410TRPBF
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Bảng dữ liệu IRFR3410TRPBF DataSheet
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Gói TO-252
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Có sẵn6256
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package | Bulk |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 31A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 39mOhm @ 18A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 56 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1690 pF @ 25 V |
| PowerDissipation(Max) | 3W (Ta), 110W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D-Pak |
Tổng quan
Description
1. Voltage and Current Ratings: It typically operates with a drain-source voltage (V_DS) of up to 100V and can handle continuous drain current (I_D) of approximately 33A, making it suitable for medium to high power applications.
2. R_DS(on) Value: The device has a low on-resistance, which minimizes power loss and improves efficiency during operation.
3. Package Type: The IRFR3410TRPBF comes in a TO-252 (DPAK) surface-mount package, which is compact and allows for efficient thermal management.
4. Applications: It is widely used in DC-DC converters, battery protection circuits, and as a switch in various electronic circuits.
This MOSFET is favored for its robustness, efficiency, and reliability in industrial and consumer electronics.
Equivalent
1. STMicroelectronics STP55NF06: Similar specifications with a focus on automotive applications.
2. ON Semiconductor NTP3055E: Widely used in power management.
3. Vishay SiHF5300: Comparable performance and packaging.
4. Fairchild Semiconductor FQP30N06L: Offers similar current and voltage ratings.
It's crucial to verify specifications and thermal characteristics for compatibility with your specific application.
Features
1. N-Channel MOSFET: It is designed as an N-channel device, which makes it suitable for high-speed switching applications.
2. Voltage and Current Ratings: It typically has a drain-source voltage (V_ds) of 100V and can handle continuous drain currents of up to 31A.
3. Low On-Resistance: The MOSFET features a low on-resistance (R_ds(on)) of about 43 mΩ, which helps in reducing power losses and improving efficiency.
4. Fast Switching: The IRFR3410TRPBF is designed for fast switching, making it suitable for high-frequency applications.
5. TO-252 Package: It comes in a D-Pak (TO-252) surface-mount package, which is compact and suitable for automated assembly.
6. Thermal Performance: It offers good thermal performance, enabling it to operate efficiently under various conditions.
These features make the IRFR3410TRPBF an excellent choice for power management, automotive, and industrial applications.
Pinout
1. Gate (G): This pin is responsible for controlling the MOSFET. A voltage applied to the gate controls the flow of current between the drain and the source.
2. Drain (D): This is the main terminal through which current flows when the MOSFET is in the "on" state. It is connected to the load in a circuit.
3. Source (S): This is the terminal through which current exits the MOSFET. It is typically connected to the ground or the negative side of the power supply in circuits.
The IRFR3410TRPBF is known for its low on-resistance and high-efficiency performance, making it suitable for various switching applications.
Manufacturer
Application
1. Power Management: Including DC-DC converters, as it can handle high current and voltage with low losses.
2. Motor Control: Used in automotive and industrial motor driving circuits for enhanced control and efficiency.
3. Switching Power Supplies: Ideal for use in switch-mode power supplies (SMPS) due to its switching speed.
4. LED Drivers: Provides efficient power control in LED lighting systems.
5. Load Switches: Acts as a high-side or low-side switch in electronic devices.
6. Uninterruptible Power Supplies (UPS): Ensures reliability in backup power systems.
These applications benefit from the MOSFET's robustness and performance in handling high power.