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IRFU220NPBF
+BOMMOSFET N-CH 200V 5A IPAK
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IRFU220NPBF
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Bảng dữ liệu IRFU220NPBF DataSheet
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Gói TO-251-3
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 5A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 600mOhm @ 2.9A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 23 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 300 pF @ 25 V |
| Power Dissipation (Max) | 43W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | IPAK (TO-251AA) |
Tổng quan
Description
This IGBT is typically used in power supply circuits, motor drives, and other heavy-duty applications requiring reliable and efficient electrical control. Its robust construction allows it to handle significant power loads, making it suitable for both industrial and consumer electrical equipment. The IRFU220NPBF usually comes in a standard TO-220 package, providing ease of integration into existing circuit designs. Overall, it offers a balance of performance, efficiency, and ruggedness, which makes it a popular choice for engineers looking to optimize power handling in their electronic devices.
Equivalent
1. IRF530NPBF
2. IRFU530PBF
3. FQP2N60C
4. NTE2991
These alternatives should be verified for compatibility with the specific application requirements. Always consult the datasheets to ensure that electrical characteristics match your needs.
Features
1. N-Channel Enhancement Mode: This configuration allows for better efficiency in switching applications.
2. Rugged Construction: The device offers high resistance to voltage spikes and transients, ensuring durability.
3. Low On-Resistance: It features a low R_DS(on), reducing power loss and improving energy efficiency.
4. High-Speed Switching: Capable of fast turn-on and turn-off times, making it suitable for high-frequency applications.
5. Drain-Source Voltage (V_DS): Typically rated for a maximum of 200V.
6. Continuous Drain Current (I_D): Supports up to 15A under specified conditions.
7. TO-251 Package: The TO-251 package aids in efficient heat dissipation and compact design.
These features make the IRFU220NPBF suitable for use in power supply designs, motor control, and other applications where efficient power management is crucial.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate determines whether the MOSFET is turned on or off.
2. Drain (D): This pin is connected to the load. When the MOSFET is turned on, current flows from the drain to the source.
3. Source (S): This pin is connected to ground or the return path of the circuit.
The IRFU220NPBF MOSFET is designed for high-speed switching applications and is used in various power management applications. It offers low on-state resistance and is capable of handling significant current and voltage levels.
Manufacturer
Application
1. Power Supply Units: Utilized in DC-DC converters and AC-DC power supplies for efficient power management.
2. Motor Control: Employed in motor drives and controllers for precise speed and torque control.
3. Automotive Systems: Used in electronic control units (ECUs) for reliable performance under harsh conditions.
4. Industrial Equipment: Ideal for robotics and automation systems requiring efficient power handling.
5. Consumer Electronics: Applied in devices like televisions and computers for energy-efficient operation.
These applications leverage the MOSFET's low on-resistance and high-speed switching capabilities.