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IRGP4640D-EPBF
+BOMIGBT 600V 65A TO-247AC
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IRGP4640D-EPBF
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Bảng dữ liệu IRGP4640D-EPBF DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Part Status | Obsolete |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector (Ic) (Max) | 65 A |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 24A |
| Power - Max | 250 W |
| Switching Energy | 115µJ (on), 600µJ (off) |
| Input Type | Standard |
| Gate Charge | 75 nC |
| Td (on/off) @ 25°C | 41ns/104ns |
| Test Condition | 400V, 24A, 10Ohm, 15V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247AC |
| Base Product Number | IRGP4640 |
| Current - Collector Pulsed (Icm) | 72 A |
| Reverse Recovery Time (trr) | 89 ns |
Tổng quan
Description
IRGP4640D-EPBF is a high-voltage, N-channel MOSFET designed for applications in power management and switching. With a maximum drain-source voltage of 40V and a continuous drain current rating of 70A, it is suitable for various electronic circuits that require efficient power control. The device features low on-resistance, which minimizes power loss during operation, enhancing overall efficiency. Its fast switching capabilities make it ideal for high-frequency applications, such as DC-DC converters and motor drives.
The "EPBF" designation indicates that the MOSFET is part of a family of products that are environmentally friendly, adhering to RoHS standards, which restrict hazardous substances. It comes in a TO-220 package format, allowing for effective heat dissipation. Overall, IRGP4640D-EPBF is a reliable choice for engineers seeking robust performance in modern electronic designs.
The "EPBF" designation indicates that the MOSFET is part of a family of products that are environmentally friendly, adhering to RoHS standards, which restrict hazardous substances. It comes in a TO-220 package format, allowing for effective heat dissipation. Overall, IRGP4640D-EPBF is a reliable choice for engineers seeking robust performance in modern electronic designs.
Equivalent
The IRGP4640D-EPBF is an IGBT (Insulated Gate Bipolar Transistor) used in power applications. Equivalent products include the FGA25N60, FGH60N60, and IGBT modules like the CM600HA-24S. Always verify specifications such as voltage, current ratings, and switching characteristics to ensure compatibility in your specific application.
Features
The IRGP4640D-EPBF is an insulated gate bipolar transistor (IGBT) designed for high-efficiency power applications. Key features include:
1. Voltage Rating: 600V, suitable for various power conversion applications.
2. Current Rating: 40A, allowing for robust performance in high-load scenarios.
3. Low Conduction Losses: Optimized for lower switching losses, enhancing overall efficiency.
4. Fast Switching Performance: Enables high-frequency operation, improving the response time in power circuits.
5. Thermal Management: Features a low thermal resistance for better heat dissipation, ensuring reliability in demanding environments.
6. Robust Gate Protection: Integrated ESD protection to enhance durability against voltage spikes.
7. Easy to Drive: Standard gate drive requirements facilitate integration into existing designs.
These features make the IRGP4640D-EPBF ideal for applications such as motor drives, power inverters, and other power management systems.
1. Voltage Rating: 600V, suitable for various power conversion applications.
2. Current Rating: 40A, allowing for robust performance in high-load scenarios.
3. Low Conduction Losses: Optimized for lower switching losses, enhancing overall efficiency.
4. Fast Switching Performance: Enables high-frequency operation, improving the response time in power circuits.
5. Thermal Management: Features a low thermal resistance for better heat dissipation, ensuring reliability in demanding environments.
6. Robust Gate Protection: Integrated ESD protection to enhance durability against voltage spikes.
7. Easy to Drive: Standard gate drive requirements facilitate integration into existing designs.
These features make the IRGP4640D-EPBF ideal for applications such as motor drives, power inverters, and other power management systems.
Pinout
The IRGP4640D-EPBF is an N-channel MOSFET with a total of 6 pins. Its primary functions include acting as a switch or amplifier in various electronic applications, especially in power management and motor control. The pin configuration typically includes:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal through which the current exits the device.
3. Source (S) - The terminal through which the current enters the device.
4. Body Diode - Not a pin but an intrinsic feature that provides reverse current conduction.
Key characteristics include a high voltage rating (up to 40V), low R_DS(on), and fast switching capabilities, making it suitable for high-efficiency applications. Always refer to the manufacturer's datasheet for specific electrical characteristics and applications.
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal through which the current exits the device.
3. Source (S) - The terminal through which the current enters the device.
4. Body Diode - Not a pin but an intrinsic feature that provides reverse current conduction.
Key characteristics include a high voltage rating (up to 40V), low R_DS(on), and fast switching capabilities, making it suitable for high-efficiency applications. Always refer to the manufacturer's datasheet for specific electrical characteristics and applications.
Manufacturer
The IRGP4640D-EPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Munich, Germany. The company specializes in a variety of semiconductor solutions, including power management, automotive electronics, and embedded systems. Infineon serves multiple industries, such as automotive, industrial, and consumer electronics, focusing on energy efficiency, safety, and connectivity. The IRGP4640D-EPBF is specifically a high-voltage IGBT (Insulated Gate Bipolar Transistor), commonly used in applications like motor control, renewable energy systems, and industrial drives, highlighting Infineon's commitment to advancing power semiconductor technologies.
Application
The IRGP4640D-EPBF is a Fast Recovery IGBT (Insulated Gate Bipolar Transistor) suitable for various applications, including motor drives, induction heating, and power inverters. It is commonly used in renewable energy systems such as solar inverters and wind turbine converters, as well as in industrial automation and power supplies. Its high efficiency and fast switching capabilities make it ideal for applications requiring reliable and effective power management and conversion.
Package
The IRGP4640D-EPBF is packaged in a TO-220 form factor, which is a standard package for power transistors and IGBTs, providing good thermal performance and ease of mounting.
