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IRL2910PBF
+BOMMOSFET N-CH 100V 55A TO220AB
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IRL2910PBF
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Bảng dữ liệu IRL2910PBF DataSheet
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Gói TO-220-3
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Có sẵn3614
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 55A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4V, 10V |
| Rds On(Max) @ Id Vgs | 26mOhm @ 29A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 140 nC @ 5 V |
| Vgs(Max) | ±16V |
| Input Capacitance(Ciss)(Max) @ Vds | 3700 pF @ 25 V |
| Power Dissipation (Max) | 200W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
Tổng quan
Description
The course likely deals with a subject indicated by "IRL" which might refer to International Relations, Industrial Relations, or a similar field, while "PBF" could denote a particular focus or specialization area.
In a typical introduction, you might expect:
- Course Overview: Brief insights into topics and themes.
- Objectives: Skills and knowledge students should acquire.
- Structure: Breakdown of lectures, seminars, and assessments.
- Resources: Recommended textbooks, articles, and online materials.
- Evaluation: Methods of assessment such as exams, essays, or projects.
For precise details, refer to the syllabus or contact the instructor or academic institution offering IRL2910PBF.
Equivalent
1. Vishay SiHF2910
2. STMicroelectronics STP40NF10
3. ON Semiconductor FQP27P06
4. Infineon IPB019N06N
These equivalents should be checked for compatibility in terms of voltage rating, current rating, package type, and other electrical characteristics specific to the application requirements. Always consult manufacturer datasheets for confirmation.
Features
1. Technology: It utilizes advanced HEXFET technology, which provides low on-resistance and high efficiency.
2. Voltage Rating: The MOSFET has a maximum drain-source voltage (V_DS) of 42V.
3. Current Rating: It can handle a continuous drain current (I_D) of up to 120A.
4. Low On-Resistance: The device features a low R_DS(on), reducing power losses and increasing efficiency.
5. Package Type: It comes in a TO-220 package, suitable for through-hole mounting.
6. Thermal Performance: The design allows for efficient heat dissipation, supporting high-performance applications.
7. Applications: It is commonly used in high-speed switching applications, such as motor drives, DC-DC converters, and power management systems.
8. Lead-Free: The PBF suffix indicates it is lead-free and RoHS compliant, making it environmentally friendly.
These features make the IRL2910PBF a reliable choice for various high-power applications.
Pinout
1. Gate (G): This pin is where the input signal is applied to control the MOSFET. The gate voltage determines whether the MOSFET is in the on or off state.
2. Drain (D): This pin is the main terminal for current flow into the MOSFET. When the MOSFET is turned on, current flows through the drain to the source.
3. Source (S): This pin is the terminal through which current exits the MOSFET. In many applications, it is connected to ground or the negative side of the load.
The IRL2910PBF is used in applications requiring efficient power management, such as in DC-DC converters, power supplies, and motor control circuits. Its low on-resistance and high current capacity make it suitable for these types of applications.
Manufacturer
Application
1. Power Management: Used in DC-DC converters and power supplies for improved efficiency.
2. Motor Control: Suitable for driving motors in automotive and industrial applications.
3. Switching Applications: Ideal for high-speed switching in inverters and power switching circuits.
4. Battery Protection: Utilized in battery-powered devices for over-current and short-circuit protection.
5. Audio Amplifiers: Used in high-power audio amplifier output stages.
6. Load Switches: Employed in controlling power to peripheral devices in portable electronics.
These applications take advantage of the MOSFET's fast switching capabilities and robust performance.