IRLI530NPBF

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IRLI530NPBF

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MOSFET N-CH 100V 12A TO220AB FP

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Thông số kỹ thuật

thuộc tính Giá trị
Package / Case Bulk,Tube
Series HEXFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 12A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4V, 10V
Rds On(Max) @ Id Vgs 100mOhm @ 9A, 10V
Vgs(th)(Max) @ Id 2V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 34 nC @ 5 V
Vgs(Max) ±16V
Input Capacitance(Ciss)(Max) @ Vds 800 pF @ 25 V
Power Dissipation (Max) 41W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB Full-Pak

Tổng quan

Description

The IRLI530NPBF is a 600V, 3.4A N-channel HEXFET Power MOSFET from Infineon Technologies. Designed for high-efficiency switching applications, it features low on-resistance (RDS(on) = 0.28Ω) and fast switching speeds, making it suitable for power supplies, motor control, and DC-DC converters.
Key specifications:
- Drain-Source Voltage (VDS): 600V
- Continuous Drain Current (ID): 3.4A
- Power Dissipation (PD): 48W
- Gate-Source Voltage (VGS): ±30V
- TO-220AB package for easy mounting.
The NPBF suffix indicates lead-free (RoHS-compliant) construction. Its rugged design ensures reliability in demanding environments.
For detailed performance curves and application notes, refer to the datasheet.

Equivalent

Equivalent products to the IRLI530NPBF (HEXFET Power MOSFET, 100V, 14A) include:
- IRF540NPBF (100V, 33A)
- IRF540ZPBF (100V, 33A, lower Rds(on))
- STP55NF06L (60V, 55A, similar characteristics)
- FQP50N06 (60V, 50A, alternative for lower voltage)
Check datasheets for exact compatibility in your application.

Features

The IRLI530NPBF is a HEXFET Power MOSFET with the following key features:
- Voltage Rating: 100V
- Current Rating: 14A (continuous)
- Low On-Resistance (RDS(on)): 0.11Ω (max at VGS = 10V)
- Fast Switching: Optimized for high-speed applications
- Avalanche Energy Rated: Improved ruggedness
- Logic-Level Gate Drive: Compatible with 5V drive
- TO-220AB Package: Easy mounting and heat dissipation
- Low Gate Charge (Qg): Enhances efficiency in switching circuits
Ideal for DC-DC converters, motor control, and power switching applications.

Pinout

The IRLI530NPBF is a TO-220AB packaged N-channel HEXFET Power MOSFET with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high current path).
3. Source (S) – Ground/reference terminal.
Key Features:
- VDSS: 100V
- ID: 17A (continuous)
- RDS(on): 0.11Ω (max at VGS = 10V)
- Logic-Level Gate Drive (4V threshold).
Commonly used in power switching, motor control, and DC-DC converters.

Application

The IRLI530NPBF is a power MOSFET commonly used in:
1. Switching Power Supplies – Efficient voltage conversion in AC/DC and DC/DC applications.
2. Motor Control – Drives motors in industrial, automotive, and robotics systems.
3. DC-DC Converters – Steps up or down voltage in battery-powered devices.
4. Inverters – Converts DC to AC in solar power systems and UPS.
5. LED Lighting – Controls current in high-power LED drivers.
Its low on-resistance (RDS(on)) and high current handling (up to 28A) make it ideal for high-efficiency, high-power applications.

Package

The IRLI530NPBF is a power MOSFET in a TO-220AB package. This through-hole package features three leads (gate, drain, source) and a metal tab for heat dissipation. It is commonly used in power switching applications due to its robust design and ease of mounting on heatsinks. The TO-220AB package is industry-standard for medium-power devices.

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