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IRLML6246TRPBF
+BOMMOSFET N-CH 20V 4.1A SOT23
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IRLML6246TRPBF
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Bảng dữ liệu IRLML6246TRPBF DataSheet
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Gói SOT23-3
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Có sẵn5006
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 4.1A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 4.5V |
| RdsOn(Max)@IdVgs | 46mOhm @ 4.1A, 4.5V |
| Vgs(th)(Max)@Id | 1.1V @ 5µA |
| GateCharge(Qg)(Max)@Vgs | 3.5 nC @ 4.5 V |
| Vgs(Max) | ±12V |
| InputCapacitance(Ciss)(Max)@Vds | 290 pF @ 16 V |
| PowerDissipation(Max) | 1.3W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | Micro3™/SOT-23 |
Tổng quan
Description
Equivalent
Features
1. Type: N-channel MOSFET, suitable for high-speed switching applications.
2. Voltage and Current Ratings: Usually handles a maximum drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) of around 7.3A.
3. Package: Available in a compact SOT-23 surface-mount package, which is ideal for space-constrained PCB layouts.
4. Low On-Resistance: It features a low R_DS(on) to minimize power losses during operation, leading to better efficiency.
5. Fast Switching: The device supports fast switching speeds, which is beneficial for high-frequency applications.
6. Thermal Performance: The device is designed to handle significant power dissipation, with attention to thermal management.
7. Applications: It is widely used in DC-DC converters, load switches, and as a part of power management systems in consumer electronics and computing devices.
These features make the IRLML6246TRPBF a versatile component for efficient power management solutions.
Pinout
1. Gate (G): This pin controls the MOSFET's switching operation. Applying a voltage to the gate allows current to flow between the drain and source.
2. Source (S): This is the terminal through which the current enters the MOSFET. For N-channel MOSFETs, the source is usually connected to ground or the negative side of the supply.
3. Drain (D): This is the terminal through which the current exits the MOSFET, connected to the load in a typical configuration.
The IRLML6246TRPBF is designed for low voltage (20V) applications and is often used in load switching and power management applications due to its low on-resistance and small package size.
Manufacturer
Application
1. Power Management: Used in voltage regulation, DC-DC converters, and power supply circuits.
2. Switching Applications: Ideal for high-speed switching in digital circuits and motor control systems.
3. Load Switching: Employed in switching loads in automotive and industrial applications.
4. Amplifiers: Utilized in signal amplification due to its fast switching and low on-resistance characteristics.
5. Consumer Electronics: Found in portable devices for battery management and power regulation.
Its compact package and efficient performance make it suitable for space-constrained and energy-efficient designs.